Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaisha Toshiba

Yasuhito Yoshimizu

Tomoya Sanuki

Hisashi Okuchi

Hiroshi Tomita

Fuyuma Ito

Hideaki Aochi

Susumu Hashimoto

Yoshihiro Ueda

Yasuaki Ootera

Shiho Nakamura

Tsuyoshi Kondo

Takuya Shimada

Shinji Miyano

Michael Arnaud Quinsat

Masaki Kado

Nobuyuki Umetsu

Yuichi Ito

Keisuke Nakatsuka

Yuya Akeboshi

Hakuba Kitagawa

Shinya Arai

Satoshi Wakatsuki

Tatsuro Hitomi

Masayuki Miura

Yoshiro Shimojo

Arata Inoue

Shinichi Kanno

Takashi Fukushima

Atsuko Sakata

Yohei Sato

Tsutomu Nakanishi

Hiroaki Yamada

Yusuke Tanaka

Toshio Fujisawa

Hiroshi Nakaki

Atsushi Hieno

Fumitaka Arai

Atsushi Fukumoto

Takashi Nakao

Masayuki Kitamura

Kei Watanabe

Fumiki Aiso

Akifumi Gawase

Keiichi Sawa

Akihiko Happoya

Takaumi Morita

Masaru Kito

Takashi Maeda

Yoshihiro Ogawa

Takashi Watanabe

Masahiro Kiyotoshi

Junichi Wada

Kiwamu Sakuma

Takeshi Ishizaki

Susumu Obata

Atsushi Murakoshi

Tatsuya Kato

Toshiyuki Sasaki

Mitsuhiro Omura

Daisuke Ikeno

Masayoshi Tagami

Shinichi Nakao

Kouji Matsuo

Atsushi Takahashi

Kosuke Takai

Mitsuo Sano

Tsubasa Imamura

Yuta Watanabe

Haruka Kusai

Minako Inukai

Yoshinori Kitamura

Keiichiro Matsuo

Genki Kawaguchi

Tomotaka Ariga

Kaori Umezawa

Tomohiko Sugita

Linan Ji

Kosuke Horibe

Nobuhito Kuge

Yuji Setta

Yuji Yamada

Yoshihiro Ohba

Kazuhito Furumoto

Hideto Horii

Ryohei Kitao

Koichi Nakazawa

Kazuhito Hayasaka

Yusuke Shima

Naomi Yanai

Hitomi Tanaka

Kazuaki Nakajima

Yui Kagi

Yohei Yamamoto

Hiroyuki Dohmae

Hiroyuki Tanizaki

Tomofumi Inoue

According to one embodiment, when a first case-mounted memory device that includes a first memory device is not connected to a slot of a host apparatus and is stored in a second stocker, the host apparatus causes a second transport device to transport the first case-mounted memory device to the slot, and to connect it thereto. When the first case-mounted memory device is not connected to the slot and is not stored in the second stocker, the host apparatus causes a first transport device to transport the first memory device from a first stocker to a mounter, causes the mounter to mount the first memory device in a case, and causes the second transport device to transport the first case-mounted memory device to the slot and to connect it thereto.

Storage system

According to one embodiment, a storage device includes a control apparatus and a stocker. The control apparatus writes data to or reads data from a storage medium that includes a plurality of non-volatile memory chips. The stocker stores a plurality of the storage media that are detached from the control apparatus. The control apparatus includes a first temperature control system. The first temperature control system raises temperature of the storage medium to a first temperature or higher. The stocker includes a second temperature control system. The second temperature control system cools the storage medium to a second temperature or lower. The second temperature is lower than the first temperature.

Storage device and control method

A semiconductor storage device includes first and second stacks, and first to fourth semiconductor layers. The first stack includes first conductive layers and first insulating layers alternately stacked in a first direction. The first semiconductor layer extends through the first stack. The second semiconductor layer extends in a second direction above the first stack and connected to the first semiconductor layer. The second stack includes second conductive layers and second insulating layers alternately stacked in the first direction. The first and second stacks are arranged in a third direction. The third semiconductor layer extends through the second stack. The fourth semiconductor layer extends in the second direction above the second stack and connected to the third semiconductor layer. A third conductive layer is in contact with upper surfaces of the second and fourth semiconductor layers. The second and fourth semiconductor layers are separated from each other in the third direction.

Semiconductor storage device

A method of processing a memory system that includes a substrate with a connector and a semiconductor memory chip connected to the connector is provided. The method includes detaching the semiconductor memory chip from the connector, performing an annealing process with respect to the semiconductor memory chip detached from the connector, and after the annealing process, attaching the semiconductor memory chip to the connector on the substrate.

Memory system and processing method of memory system

A semiconductor wafer includes a surface having at least one recess including an inner wall surface. The inner wall surface is exposed.

Semiconductor wafer and method of manufacturing semiconductor apparatus

According to one embodiment, a stacked body includes a plurality of electrode layers stacked with an insulator interposed. A conductive via pierces the stacked body, and connects an upper layer interconnect and a lower layer interconnect. A insulating film is provided between the via and the stacked body. A distance along a diametral direction of the via between a side surface of the via and an end surface of one of the electrode layers opposing the side surface of the via is greater than a distance along the diametral direction between the side surface of the via and an end surface of the insulator opposing the side surface of the via.

Semiconductor device and method for manufacturing same

A semiconductor device includes a substrate, a first stacked film and a second stacked film each including insulating layers and electrode layers alternately provided on the substrate, and columnar portions provided in the insulating layers and electrode layers of the first stacked film, and including charge storage layers and semiconductor layers. The second stacked film further includes an insulator including first and second lower faces, the first lower face is inclined by a first angle to an upper face of one of the electrode layers in the first stacked film, the second lower face is inclined by a second angle to the upper face of the one of the electrode layers in the first stacked film, and the second angle is less than the first angle. The insulating layers and electrode layers in the second stacked film are provided below the first and second lower faces of the insulator.

Semiconductor device, template, and method of manufacturing template

A semiconductor storage device includes a semiconductor substrate and a conductive layer separated from the semiconductor substrate in a first direction. The conductive layer extends in a second direction parallel to the semiconductor substrate. A semiconductor layer extends in the first direction through the conductive layer. A first contact extends in the first direction and is connected to a surface of the conductive layer facing away from the semiconductor substrate. A first insulating layer extends in the first direction, and a second insulating layer extends along the first insulating layer in the first direction. Each of the first and second insulating layers entirely overlaps with the first contact when viewed in the first direction.

A semiconductor storage device includes a stacked body, a first columnar portion, a second columnar portion, and second insulating layers. The stacked body includes a plurality of conductive layers and a plurality of first insulating layers alternately stacked in a first direction. The first columnar portion being in a first region, and the second columnar portion being in a second region. The first columnar penetrates the stacked body in the first direction and includes a semiconductor layer. The second columnar portion penetrates the stacked body in the first direction and includes an insulating layer thereon. The second insulating layers are between the second columnar portion and either the conductive layers or the first insulating layers. The insulating layer on the second columnar portion. The second insulating layers are between the insulating layer on the second columnar portion and one of the conductive layers or the first insulating layers.

Semiconductor storage device and manufacturing method thereof

A semiconductor memory device including: plural first conductive layers stacked on a substrate; plural second conductive layers each stacked between the first conductive layers; a pillar that extends in a stacking direction of the first and second conductive layers and forms plural memory cells at intersections of the first and second conductive layers in a region where first and second conductive layers are arranged; a first contact plug that extends in the stacking direction of the first and second conductive layers and is connected to the first conductive layers in the region where the first and second conductive layers are arranged; and a second contact plug that extends in the stacking direction of the first and second conductive layers and is connected to the second conductive layers in the region where the first conductive layers and second conductive layers are arranged.

Semiconductor memory device having contact plugs extend in the stacking direction of the plurality of the first and second conductive layers

A memory chip unit includes a pad electrode including first and second portions, and a memory cell array. A prober includes a probe card and a movement mechanism. The probe card includes a probe electrode to be in contact with the pad electrode, and a memory controller electrically coupled to the probe electrode and executes reading and writing on the memory cell array. The movement mechanism executes a first operation that brings the probe electrode into contact with the first portion and does not bring the probe electrode into contact with the second portion, and a second operation that does not bring the probe electrode into contact with the first portion and brings the probe electrode into contact with the second portion.

Storage system, memory chip unit, and wafer

A semiconductor storage device includes first wiring layers stacked along a first direction, a first pillar including a first semiconductor layer and extending along the first direction through the first wiring layers, a second wiring layer disposed above the first pillar in the first direction and extending along a second direction perpendicular to the first direction, a semiconductor-containing layer including a first portion disposed on an upper end of the first pillar in the first direction, a second portion contacting the first portion and formed along the second wiring layer, and a third portion contacting an upper end of the second portion and extending along a third direction perpendicular to the first direction and crossing the second direction, and a first insulating layer between each of the first and second portions of the semiconductor-containing layer and the second wiring layer. An upper surface of the third portion contains a metal.

Semiconductor storage device and method for manufacturing semiconductor storage device

A memory system has a memory cell array having a plurality of strings, the plurality of strings each having a plurality of memory cells connected in series, and a controller configured to perform control of transferring charges to be stored in the plurality of memory cells in the string or transferring charges according to stored data, between potential wells of channels in the plurality of memory cells.

Memory system

According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.

Substrate treatment apparatus and manufacturing method of semiconductor device

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Mie, Japan

Yasuhito Yoshimizu