Showa Denko K.k.

Yasuhito Urashima

Hisayuki Miki

Mineo Okuyama

Katsuki Kusunoki

Tetsuo Sakurai

The present invention relates to a process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, followed by etching treatment and then electrode formation.

Process for fabrication of nitride semiconductor light emitting device

An object of the present invention is to provide a Group III nitride semiconductor multilayer structure having a smooth surface and exhibiting excellent crystallinity, which multilayer structure employs a low-cost substrate that can be easily processed. Another object is to provide a Group III nitride semiconductor light-emitting device comprising the multilayer structure. The inventive Group III nitride semiconductor multilayer structure comprises a substrate; an AlGaN (0&#x2266;x&#x2266;1) buffer layer which is provided on the substrate and has a columnar or island-like crystal structure; and an AlInGaN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;x+y&#x2266;1) single-crystal layer provided on the buffer layer, wherein the substrate has, on its surface, non-periodically distributed grooves having an average depth of 0.01 to 5 &#x3bc;m.

Group III nitride semiconductor multilayer structure

A nitride semiconductor light-emitting device includes a substrate, a nitride semiconductor layer incorporating therein a first electroconductive semiconductor layer, a light-emitting layer and a second electroconductive semiconductor layer, a transparent electrode contiguous to at least part of a first surface of the second electroconductive semiconductor layer, and a second electrode contiguous to the first electroconductive semiconductor layer; wherein the substrate has a first surface thereof provided with a first region exposed by removal of a first part of the nitride semiconductor layer in a peripheral part of the device and a second region exposed by removal of at least a second part of the nitride semiconductor layer contiguous to the transparent electrode except the peripheral part of the device till the substrate. A method for the production of the device includes removing a first part of the nitride semiconductor layer in a peripheral part of the device till the substrate is exposed to form a first exposed region thereof and removing at least a second part of the nitride semiconductor layer contiguous to the transparent electrode except the peripheral part of the device till the substrate is reached to form a second exposed region thereof, wherein the steps are taken by combining the removal with a laser and the removal by wet etching.

Nitride semiconductor light-emitting device and method for fabrication thereof

A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular to a normal line relative to a principal plane of the substrate. A method for the production of a nitride semiconductor light-emitting device that includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate includes the steps of covering a first surface of the nitride semiconductor layer with a mask provided with a prescribed pattern, removing the nitride semiconductor layer in regions to be divided into component devices till the substrate, subjecting the nitride semiconductor layer to wet-etching treatment and dividing the nitride semiconductor layer into the component devices.

It is an object of the present invention to inhibit exposure of Ag in Ag-employing reflective electrodes caused by microdefects generated during the manufacturing process, and to prevent reduction in light emission output and deterioration in current-voltage characteristics resulting from shorting of the light emitting device. The semiconductor light emitting device comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer in that order on a substrate, with a negative electrode and positive electrode each formed in contact with the n-type semiconductor layer and p-type semiconductor layer, respectively. The positive electrode comprises at least a contact metal layer composed of at least one type of metal selected from the group consisting of Pt, Ir, Rh, Pd, Ru and Re or their alloy in contact with the p-type semiconductor layer, a reflective layer composed of a metal or alloy containing Ag as the main component on the contact layer, and one or more protective metal layers containing no Ag, covering the top and side surfaces of the reflective layer.

Gallium nitride-based semiconductor light emitting device and process for its production

A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing no nitrogen source, a step of nitriding the particles in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.

METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD OF FABRICATING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LIGHT SOURCE USING THE SEMICONDUCTOR LIGHT-EMITTING DEVICE

Growing community of inventors

Ichihara, Japan

Yasuhito Urashima