Kabushiki Kaisha Toshiba

Yasuhito Saito

Masayuki Arakawa

Tomohiro Iguchi

Naruhito Kondo

Takeru Matsuoka

Osamu Tsuneoka

Akio Nakagawa

Ichiro Omura

Yusuke Kawaguchi

Tatsuya Yamada

Kazuo Shimokawa

Masaki Toyoshima

Kenichi Matsushita

Noriaki Yoshikawa

Kazuki Tateyama

Naotake Watanabe

Shimpei Yoshioka

Yoshiki Endo

Takashi Koyanagawa

Hiroshi Takei

Osamu Usuda

Takahiro Sogou

Haruki Arai

Morio Takahashi

Masahiro Urase

Akihiro Hara

Tomohiro Kawano

Taiki Miura

Masako Ooishi

Seiichiro Kamiyama

Kenji Ito

Tetsuro Komatsu

Taizo Tomioka

Ikuo Mori

Kenta Fukatsu

Jun Karasawa

Mutsumi Suematsu

Seiichi Kamiyama

Yoshitoshi Fukuchi

Mio Ohmura

Youko Maekawa

According to one embodiment, a semiconductor device includes: a first region including: a first semiconductor layer; a first semiconductor region; a second semiconductor region; a third semiconductor region having higher impurity concentration than the first semiconductor region; a first electrode; a second electrode; an insulating film; a third electrode; a fourth electrode, a second region including a pad electrode, and the third region including: the first semiconductor layer; the first semiconductor region; a third semiconductor region; the first electrode; the second electrode; and a first insulating layer.

Semiconductor device including transistor

Semiconductor device

According to one embodiment, a thermoelectric module includes a housing and a power generation member. The housing has a first temperature layer and a second temperature layer, the first temperature layer and the second temperature layer being stacked, the housing further having a cylindrical through-hole provided so as to penetrate the first temperature layer and the second temperature layer. The power generation member has thermoelectric materials stacked such that current flows in one direction in the power generation member, the power generation member being provided in the through-hole so that opposite ends of each of the thermoelectric materials are positioned at the first temperature layer and the second temperature layer, respectively.

Thermoelectric module and power generation apparatus

A semiconductor module comprises a mounting board. A plurality of power switching device chips are mounted on the mounting board by flip-chip bonding. The chip has an upper surface and a lower surface and is configured to face the upper surface toward the mounting board. A drive IC chip is mounted on the mounting board by flip-chip bonding. The drive IC chip is operative to drive gates of transistors formed in the plurality of power switching device chips. A plurality of heat sink members are located on the lower surfaces of the plurality of power switching device chips, respectively. A resinous member is provided to seal the plurality of power switching device chips and the drive IC chip in a single package.

Semiconductor module

In order to provide a highly reliable thermoelectric device, in a thermoelectric device, a plurality of heat-radiating-side electrodes, arranged in accordance with positions where respective thermoelectric elements are to be arranged, are arrayed in an array fashion on a planer surface of a heat-radiating-side board. Heat-radiating-side end surfaces of the plurality of p-type thermoelectric elements and n-type thermoelectric elements and the heat-radiating-side electrodes are joined together by solders. Heat-absorbing-side electrodes are brought into sliding contact with heat-absorbing-side end surfaces of these thermoelectric elements.

Method of making a thermoelectric device

Thermoelectric device

An optically coupled semiconductor device according to the present invention comprises a mount electrode and a wire electrode which are formed on a top main face of the first wiring substrate, a light-emitting element is electrically connected to the mount electrode and the wire electrode, a first electrode pad and a second electrode pad which are provided on the top main face of the second wiring substrate in such a manner as to sandwich the opening formed in the second wiring substrate, a photo-receptor element which is arranged in such a manner as to block the opening formed in the second wiring substrate and which is connected to the first electrode pad so as to face the light-emitting element, and a switching element which is connected to the second electrode pad so as to face the wire.

Optically coupled semiconductor device and method for manufacturing the same

In a stacked-type semiconductor unit having a plurality of semiconductor devices stacked on a base board including a base electrode, each semiconductor device has a wiring board including an external electrode provided in an end portion thereof. The semiconductor devices are stacked on the base board such that the external electrodes are aligned with one another. Then, the external electrodes are electrically connected to the base board by solder.

Semiconductor device having a plurality of stacked wiring boards

A semiconductor device comprises a first wiring board and a second wiring board, wherein the first wiring board includes a first semiconductor element arranged on the underside of the first wiring board, and a second connecting section formed on the underside of the first wiring board, the second wiring board includes a second semiconductor element, and a third connecting section formed on the surface of the second wiring board, the second connecting section has a first external connecting land, the third connecting section is arranged opposite to the first external connecting land and has a second external connecting land which is smaller than the first external connecting land, and the second and third connecting sections are formed such that a combined thickness thereof provides a given space between the first semiconductor element and the second wiring board.

Stacked semiconductor device and method for manufacturing the same

A semiconductor device includes a pair of semiconductor switching elements and a board. Each semiconductor switching element has positive and control electrodes formed on one surface and a negative electrode formed on the other surface. The positive and control electrodes of one of the semiconductor switching elements are joined to the board, and the negative electrode of the other semiconductor switching element, which faces in a direction opposite to that of one of the semiconductor switching elements, is joined to the board.

A circuit substrate which is formed by fixing a wiring pattern on an insulated substrate has a shielding member for absorbing or reflecting radio waves formed on a first electronic component electrically connected. A shielding layer for absorbing or reflecting radio waves is formed on the circuit substrate. And, a second electronic component is disposed between the first electronic component and the shielding layer.

Circuit substrate shielding device

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Yokohama, Japan

Yasuhito Saito