National Institute of Advanced Industrial Science and Technology

Funai Electric Company Ltd.

Funai Electric Advanced Applied Technology Research Institute Inc.

Osaka University

Yasuhisa Naitoh

Tetsuo Shimizu

Shigeo Furuta

Tsuyoshi Takahashi

Masayo Horikawa

Masatoshi Ono

Yuichiro Masuda

Tomoji Kawai

Takuya Matsumoto

Hidekazu Abe

Yutaka Hayashi

Hiroyuki Akinaga

Hisashi Shima

Masakazu Mukaida

Wataru Mizutani

Yukinori Morita

Qingshuo Wei

Yoicho Otsuka

Takao Ishida

Taro Itaya

Makoto Takahashi

An information processing device, including a resistive analog neuromorphic device element having a pair of electrodes and an oxide layer provided between the pair of electrodes, and a parallel circuit having a low resistance component and a capacitance component. The parallel circuit and the resistive analog neuromorphic device element are connected in series.

Information processing device and method of driving information processing device

A thermoelectric material is manufactured by a manufacturing process including annealing at an annealing temperature from 125&#xb0; C. to 200&#xb0; C. and for an annealing time from 5 minutes to 12 hours applied to a substance selected from the group consisting of conductive polymer, polystyrene sulfonate (PSS), tosylate (TOS), chloride and perchlorate and a substance as solvent selected from the group consisting of ethylene glycol, ethanol, dimethyl sulfoxide and isopropanol.

Thermoelectric material and thermoelectric module

A storage element includes a first electrode and a second electrode separated by a gap and a dielectric layer provided between the first electrode and the second electrode to fill the gap. A separation distance of the gap changes in response to application of a voltage to a space between the first electrode and the second electrode, such that a switching phenomenon is produced which switches a resistance state between the first electrode and the second electrode between a high resistance state in which it is difficult for tunnel current to flow and a low resistance state in which it is easy for tunnel current to flow.

Storage element

There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.

Switching element

A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.

A switching elementincludes an insulating substrate, a first electrodeprovided on the insulating substrate, a second electrodeprovided on the insulating substrate, and an interelectrode gapprovided between the first electrodeand the second electrode, a distance G between the first electrodeand the second electrodebeing 0 nm&#x3c;G&#x2266;50 nm.

Switching element relying on nanogap electrodes

A two-terminal resistance switching element, wherein two silicon films each doped with an impurity are arranged with a gap width in the order of nanometers. The gap width is in the range of from 0.1 nm to 100 nm. A semiconductor device can be obtained by providing the two-terminal resistance switching element in a memory, a storage device or other device.

Two-terminal resistance switching element with silicon, and semiconductor device

A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.

Drive method of nanogap switching element and storage apparatus equipped with nanogap switching element

A non-volatile memory devicecontains: an insulating substrate; a first electrodeprovided on the insulating substrate; a second electrodeprovided on the insulating substrate; and a gapset between the first electrodeand the second electrode, in which a distance G between the first electrodeand the second electrodeis: 0 nm&#x3c;G&#x2266;50 nm.

Nonvolatile memory device with nano gap electrode

A probe device comprises a cantilever comprising a probe allocated to be opposed to a surface of a sample, means for feeding back a vibration amplitude value of the cantilever, thereby self-exciting and vibrating the cantilever at a predetermined frequency, means for applying a bias to the sample or the probe, and means for measuring a frequency shift caused by a charge-transfer force which acts between the cantilever and the sample.

Probe device

A probe device including a cantilever. A probe is attached to the cantilever and is allocated to be opposed to a surface of a sample attached thereto. An apparatus is provided with the probe device, which is capable of carrying out measurement of the sample while switching at a predetermined period two operating modes, a tapping mode for measuring a surface structure of the sample while vibrating the cantilever and a point contact mode for measuring an electrical characteristic of the sample while bringing the probe into contact with the sample.

Growing community of inventors

Tsukuba, Japan

Yasuhisa Naitoh