Mitsumi Electric Company Ltd.

Yasuhisa Ishikawa

Yukihiro Terada

Atsushi Watanabe

Akira Ikeuchi

Hiroshi Oya

A semiconductor device is disclosed. The semiconductor device includes an internal circuit having a high breakdown voltage transistor, and a first electrostatic protection circuit in which electrostatic protection elements are connected in series. The sum of the breakdown voltage values of the electrostatic protection elements in the first electrostatic protection circuit is almost equal to the breakdown voltage value of the high breakdown voltage transistor. The first electrostatic protection circuit is connected between an input/output terminal and a ground terminal of the semiconductor device to which terminals the internal circuit is connected.

Semiconductor electrostatic protection device

A semiconductor device includes a substrate, a well region formed in the substrate, a field effect transistor formed in the well region, and a diffused region, formed across the well region and the substrate for applying back gate potential to the well region, and forming a PN junction together with its periphery. The field effect transistor and the PN junction are connected between terminals for absorbing excess current so that an internal circuit connected to the terminals is protected.

Electrostatic discharge semiconductor protection circuit of reduced area

A static protection device protects an internal circuit of a semiconductor device from surge voltages. An emitter terminal of the PNP transistor is connected to the input/output terminal, a collector terminal of the PNP transistor is connected to the ground terminal, and the base terminal is left open, to realize the static protection device. In this manner the reverse-biased protection can be maintained with respect to the internal circuit.

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Kanagawa, Japan

Yasuhisa Ishikawa