Renesas Electronics Corporation

Yasuhisa Fujii

Keiichi Yamada

Hiroshi Mitsuyama

To provide a more reliable semiconductor device including a lower-cost and more reliable capacitor and a method of manufacturing the same. This manufacturing method comprises the steps of: preparing a semiconductor substrate; and forming, over one of the major surfaces of the semiconductor substrate, a first metal electrode including an aluminum layer, a dielectric layer over the first metal electrode, and a second metal electrode over the dielectric layer. In the step of forming the first metal electrode, the aluminum layer is formed so that the surface thereof satisfies a relationship of Rmax&#x3c;80 nm, Rms&#x3c;10 nm, and Ra&#x3c;9 nm. The step of forming the first metal electrode comprises the steps of: forming at least one first barrier layer; forming the aluminum layer over the first barrier layer; and recrystallizing a crystal constituting the aluminum layer.

Growing community of inventors

Itami, Japan

Yasuhisa Fujii