Kabushiki Kaisha Toshiba

National Institute of Advanced Industrial Science and Technology

Kanto Kagaku Kabushiki Kaisha

Yasuhiro Yamaji

Masahiro Aoyagi

Hiroshi Nakagawa

Katsuya Kikuchi

Naohiko Hirano

Tokihiko Yokoshima

Yoichi Hiruta

Toshiharu Sakurai

Kenji Takahashi

Hiroshi Harada

Eiichi Hosomi

Masaru Kato

Tsutomu Nakazawa

Susumu Harada

Seiichi Hirata

Kazuichi Komenaka

Mitsugu Miyamoto

Ryota Iwai

Tomoaki Tokuhisa

Katsuto Katoh

Masashi Muromachi

Kazuo Numajiri

Haruyuki Shimakawa

Akihiro Mase

Yoshihiro Atsumi

An electroless gold plating solution with which one or more openings formed in a resist overlying a substrate can be filled in a short time, the openings having a width on the order of micrometer, in particular, 100 &#x3bc;m or smaller, in terms of the width of the exposed substrate area, and having a height of 3 &#x3bc;m or larger. The electroless gold plating solution contains a deposition accelerator for deposition in fine areas, and a microfine pattern of 100 &#x3bc;m or finer is formed therefrom.

Electroless gold plating solution for forming fine gold structure, method of forming fine gold structure using same, and fine gold structure formed using same

An electrode connection structure of a semiconductor chip is provided to realize a highly reliable electrical connection with low stress without using a bump. A conductive member may be used for such an electrode connection structure. A semiconductor device is provided wherein semiconductor chips are arranged in layers without providing the semiconductor chips with a through via, and a method is provided for manufacturing such a semiconductor device. A part or all of the surface of a horizontal recess, which is formed in an adhesive layer arranged between a first electrode of a lower layer and a second electrode of an upper layer, is provided with a conductive member for connecting the first electrode and the second electrode.

Electrode connection structure of semiconductor chip, conductive member, and semiconductor device and method for manufacturing the same

Semiconductor chips are stacked on a first main surface of an interconnect substrate. The semiconductor chips have a base and connection bumps. Mutually facing two of the bases and the interconnect substrate are apart from each other. The connection bumps electrically connect the mutually facing two of the bases and the interconnect substrate together. Insulating sealing members seal the connection bumps and fill spaces between the mutually facing two of the base and the interconnect substrate. The sealing members have a cavity penetrating the sealing member.

Three-dimensionally mounted semiconductor module and three-dimensionally mounted semiconductor system

A plurality of semiconductor chips bent along the outer circumferential surface of a cylindrical substrate are mounted to the outer circumferential surface of the substrate. The bumps of these semiconductor chips are connected to connection pads formed on the outer circumferential surface of the substrate. By diminishing the curvature radius of the bent semiconductor chips, the size of the semiconductor module can be made smaller than the size of the chip.

Semiconductor device using substrate having cubic structure and method of manufacturing the same

Resin meltable at a time of reflowing is provided on the surface of a semiconductor chip and top ends of the connection electrodes are located parallel with the surface of the resin. A semiconductor chip is mounted on a mounting substrate and, upon reflowing, the resin is molten to allow the semiconductive chip to be bonded to the mounting substrate and encapsulate a resultant structure.

Semiconductor device for a face down bonding to a mounting substrate and a method of manufacturing the same

In this manufacturing method of a semiconductor device, after an electrode pad is formed on a surface of a semiconductor substrate, on this surface where the electrode pad is formed, except for on the electrode pad an insulating protective film is formed, then a layer of barrier metal covering the electrode pad is formed. Subsequently, a covering layer of curable resin having a hole exposing at least a part of the layer of barrier metal is formed on a semiconductor substrate. Then, the hole of the covering layer of curable resin is filled by conductive material and on the filled portion a protrusion is formed. Finally, these filled and protruded portions are exposed to heat treatment to form a protruded electrode for external connection. Thus, a semiconductor device having a protruded electrode that is high sufficiently, can be manufactured. Thermal stress does not concentrate at joint portion with the semiconductor substrate, and semiconductor device is highly reliable. In addition, the semiconductor device is reduced in bending or prevented from bending, resulting in easy mounting.

Manufacturing method of semiconductor device

Semiconductor device for face down bonding to a mounting substrate and a

A heat sink is attached to a semiconductor element functioning as an exothermic element, which is mounted on a circuit board and has a predetermined allowable power consumption, thereby cooling the semiconductor element. A semiconductor element having a lower allowable power consumption than the semiconductor element having the predetermined power consumption, which is hardly exposed to a cooling air flow cooled via the heat sink, is connected to a heat conductive auxiliary member connected at one end to the heat sink. Thus, the heat radiation efficiency of the semiconductor element having the lower allowable power consumption is enhanced.

Semiconductor apparatus capable of cooling a semiconductor element with

In a semiconductor device and a method for manufacturing the same according to the present invention, a bonding wire is bonded to an electrode pad of a semiconductor element by ball bonding. The bonding wire is cut to have a predetermined length, and compressed and crushed into a bump. By doing so, a wire bump electrode is formed on each electrode pad of the semiconductor element. The wire bump electrodes formed on the electrode pads are then bonded to the respective substrate electrodes on a mounting substrate by melting a low-melting metal. As a result, a flip chip bonding structure wherein the semiconductor element and mounting substrate are bonded to each other by the wire bump electrodes, is obtained. Even in a semiconductor device wherein a semiconductor element is bonded to a resin type mounting substrate whose thermal expansion coefficient greatly differs from that of the semiconductor element, a flip chip bonding structure, which is strong in a heat cycle test and has high reliability, can be achieved.

Semiconductor device including a semiconductor element mounted on a

Since an electronic device comprises an electronic component, an external connection terminal electrically connected to the electronic component, and an envelope for sealing the electronic part and having a thickness less than about 0.5 mm, the electronic device is miniaturized even in the case where it is provided with a large number of terminals. Further, since the electronic component is sealed by the envelope, moisture, etc. is not admitted into the electronic component, resulting in high reliability. In addition, since the thickness of the envelope is thin, the external terminal can be shortened. Thus, the inductance or capacitance of this terminal can be reduced.

Electronic device having a chip with an external bump terminal equal or

A semiconductor chip is packaged within film carriers which serve as the enclosure of the semiconductor chip. The finished semiconductor device is flexible, bendable, and very thin. In manufacturing this semiconductor device, the process of laminating film carriers, the process of electrically connecting the semiconductor chip and film carriers, and the process of sealing the semiconductor chip, can be performed at the same time, shortening the manufacturing time and reducing manufacturing cost.

Semiconductor device of multichip module-type

The present invention comprises a semiconductor chip 1, chip electrodes 2 provided on one surface of the semiconductor chip 1, and connected to semiconductor elements formed in the semiconductor chip, a flexible insulating film 3 wrapping the chip electrodes, wiring layers 5 formed in the insulating film 3, and electrically connected to the chip electrodes 2, and terminal electrodes 6 provided on that surface of the insulating film 3 which extends on the upper surface of the chip 1, the electrodes 6 being electrically connected to the wiring layers 5, and functioning as external terminals of the chip 1. Thus, the terminal electrodes 6 are introduced, by means of the wiring layers 5 formed in the insulating film 3, onto that surface of the insulating film 3 which extends on the upper surface of the chip 1.

Semiconductor device

First and second frame bodies are used to fabricate a semiconductor device. The first frame body includes a die pad. The second frame body only includes a plurality of leads. The die pad is depressed by a predetermined amount which is equal or greater than the thickness of a semiconductor chip to be mounted on the die pad. The two frame bodies are welded, and wire bonding and cutting of the leads are performed.

Growing community of inventors

Kawasaki, Japan

Yasuhiro Yamaji