Hitachi, Ltd.

Victor Company of Japan, Limited

Kabushiki Kaisha Toshiba

Nippon Telegraph and Telephone Corporation

Yasuhiro Yamaguchi

Toru Otsubo

Junzou Azuma

Mitsuo Tokuda

Ichirou Sasaki

Yasuhiro Ando

Toshijiro Ohashi

Yoshiyo Wada

Shuichiro Inagaki

Kenichi Donuma

Yasuo Haneji

Michinaga Kohno

Akira Yoshida

Kazuhiro Ohara

Hirohisa Usuami

Nobu Kamita

Yasuhiro Mori

Masakatsu Moriyama

Takahiko Takeuchi, Deceased

Norio Onozato

An optical disc apparatus has a first objective lens for a first optical disc such as a CD and a second objective lens for a second optical disc such as a DVD. The first and second objective lenses are mounted on a base that is transferrable in a direction of radii of the first and second optical discs coaxially installed in the optical disc apparatus. A first center of the first objective lens is located on a first line passing through a center of the first optical disc. On the other hand, a second center of the second objective lens is located on a second line orthogonal to the first line. The first and centers are separated from each other by a predetermined distance.

Optical disc apparatus for installing two types of optical discs

Disclosed herein are an insulating film forming method for semiconductor device interconnection and a plasma treatment system for use in the method. The method comprises (i) a step of forming an insulating film free of void, on a substrate having an interconnection pattern, in which a mixed gas of a film forming source gas and an etching gas comprising a fluorine compound is used to perform both deposition of an insulating film by plasma CVD and reactive etching of the insulating film, simultaneously, and (ii) a step of planarizing the surface of the insulating film formed by the step (i) and comprised of, for example, silicon oxide, in which a gas of a material decomposable by a reactive gas capable of decomposing the insulating film is supplied onto the substrate so as to deposit a solid film of the material, e.g. Si(OCH.sub.3).sub.4, on the insulating film on the substrate, the temperature of the substrate is then raised to liquefy the deposited material film, thereby planarizing the surface of the material film, the substrate temperature is again lowered to solidify the planarized liquid material film, and thereafter the insulating film together with the Si(OCH.sub.3).sub. 4 solid film is subjected to plasma etching with, for instance, CF.sub.4 gas as an etching gas. According to the invention, an insulating film which is planar and free of voids can be formed on an interconnection pattern of a substrate, without affecting the characteristics of devices provided on the substrate.

Insulating film forming method for semiconductor device interconnection

Disclosed is a plasma CVD apparatus and a method therefor, the apparatus comprising: a microwave generating portion; a coaxial cavity resonator for making a microwave supplied from the microwave generating portion resonate; a plurality of gas leading inlets provided in under portions of an axis of the cavity resonator and in peripheral wall portions of the cavity resonator for leading-in a supplied CVD gas; and a plasma generating chamber in which the CVD gas lead into the plasma generating chamber through the gas leading inlets and made to flow uniformly onto a surface of a substrate is subject to the microwave made intensive through resonance in the cavity resonator and radiated through a coupling plate so that uniform plasma is generated to thereby form a thin film on the surface of the substrate. Further disclosed is a plasma processing apparatus and a method therefor, the apparatus comprising; a plasma chamber for maintaining plasma generated in the inside of the plasma chamber so as to perform plasma processing; a first microwave accumulating and intensifying cavity resonance chamber connected with the plasma chamber through a first slot plate; a second microwave accumulating and intensifying cavity resonance chamber connected with the first cavity resonance chamber through a second slot plate parallel to the first slot plate; and a microwave generator for leading a microwave into the second cavity resonance chamber through a waveguide.

Processing apparatus and method for plasma processing

A floating type magnetic head assembly comprises: a magnetic head constituting a first slider; a second slider in which the first slider is so supported as to be movable in straight line only in a direction perpendicular to a magnetic recording disc and as to project outwardly beyond the second slider toward the recording disc; a cantilever arm formed from a thin elastic plate and supporting at its distal end the second slider over the recording medium, the second slider being thus supported in a freely rotatable state about a fulcrum in a form of a projection for applying pressing force from the arm on the second slider on the side thereof oppositely remote from the recording disc; and force exerting means for exerting a pressing force on the first slider by way of its supporting means.

Floating type magnetic head assembly

A plasma processing apparatus including a microwave generator, a waveguide for supplying microwaves generated by the microwave generator, a cavity resonator for resonating the microwaves supplied by the waveguide, and a plasma processing chamber. The plasma processing chamber is coupled to the cavity resonator for receiving resonated microwaves therefrom and for generating a plasma therein. The plasma processing chamber is provided with a stage for holding a substrate for plasma processing, and apparatus for introducing a plasma processing gas to the plasma processing chamber for exhausting gas therefrom. A separation plate separates the cavity resonator and the plasma processing chamber and enables resonated microwaves to be transmitted therethrough from the cavity resonator means to the plasma processing chamber. A slot plate functioning as an antenna is disposed in the cavity resonator in opposition to a surface of the substrate for enabling radiation of the resonated microwaves to the plasma processing chamber through the separation plate, the slot plate including at least one set of circumferentially extending slots for enabling radiation of resonated microwaves.

Apparatus for plasma processing

Microwaves supplied from a magnetron through a waveguide are resonated in a cavity resonator to increase their amplitude. The resonated microwaves are emitted into a plasma production chamber through slits and a wall. Then plasma is produced in the plasma production chamber into which plasma processing gas is introduced. The plasma is employed for uniformly processing a substrate.

Plasma processing apparatus

An optical connector includes a plug and an adaptor to which the plug is to be connected. The adaptor is formed with a plug body fitting portion and a holder fitting portion. The plug has a plug body to which a optical fiber cable is fixed. A floating holder is arranged in the plug body to be movable in any direction with respect to the plug body. An end of the optical fiber of the cable is attached to a ferrule which is supported by the holder. When the plug is connected to the adaptor, the plug body is fitted to the plug body fitting portion and the holder to the holder fitting portion. At this time, the plug body is locked to the plug body fitting portion by a lock mechanism, and the holder is locked to the holder fitting portion by engaging projections on the holder and engaging holes which are formed in the holder fitting portion and engaged with the projections.

Optical connector

A method of and an apparatus for winding a wire around a toroidal core wherein one end portion of the wire is fixed in a predetermined position and the other end portion thereof is gripped, while leaving free a predetermined length from the leading end, by a gripping device which is moved to a position suitable for bringing the leading end substantially into alignment with a center opening formed in the toroidal core in the side of one surface thereof. After releasing the wire from the gripping device, the leading end of the wire passing through the opening and extending beyond the other surface of the toroidal core is gripped by a pull-out device which is moved to partially pull the wire out of the opening axially thereof, and the other end portion of the wire is again gripped by the gripping device while releasing the wire from the pull-out device. The gripping device is moved to the position to which it moved previously while tensioning the portion of the wire pulled out of the opening, whereby the wire can be fully pulled out of the opening and wound around the toroidal core.

Apparatus for winding wire around toroidal core

Growing community of inventors

Yokohama, Japan

Yasuhiro Yamaguchi