Sony Corporation

Canon Kabushiki Kaisha

Victor Company of Japan, Limited

Panasonic Intellectual Property Management Co., Ltd.

Sanyo Electric Co., Ltd.

Ntt Electronics Corporation

Other

Panasonic Corporation

Sony Semiconductor Solutions Corporation

Hitachi, Ltd.

Hoya Corporation

Opnext Japan, Inc.

Oclaro Japan, Inc.

Yasuhiro Yamada

Hiroshi Tanioka

Tsutomu Tanaka

Makoto Takatoku

Michiru Senda

Hiromitsu Hirabayashi

Hiroshi Tajika

Noribumi Koitabashi

Hitoshi Sugimoto

Miyuki Matsubara

Yoshiaki Takayanagi

Souhei Tanaka

Yasuhiro Numata

Yusuke Kinoshita

Masayuki Hirose

Ryoichi Ito

Harukuni Kobari

Tomonao Kikuchi

Akihiro Hayami

Shoji Ueno

Hidetoshi Ishida

Takashi Ichiryu

Yasuo Inoue

Masanori Nomura

Hirohiko Katayama

Naohiko Baba

Mikiharu Matsuoka

Tadashi Hatano

Yasuko Miyazaki

Chitoshi Hibino

Yoshiaki Sakauchi

Takashi Kanemoto

Susumu Suzuki

Masaya Konishi

Yoichiro Sako

Akira Tange

Masanori Yamada

Yasumichi Suzuki

Kazuyoshi Takahashi

Yoichi Takaragi

Akiko Kanno

Yoshinobu Sato

Yoshiki Uchida

Hidekazu Umeda

Takaro Mori

Kazuyoshi Tsukamoto

Kazufumi Ushijima

Sadahiro Yasura

Satoshi Higano

Norihiko Nagai

Takayuki Nakao

Toshiaki Murai

Shiro Yoshida

Tomoaki Shimotsu

Yuichiro Koike

Hidehiro Ikeuchi

Tohru Oyama

Tadaaki Fujii

Masayuki Miyoshi

Tokuhiko Fuchigami

Hiroyuki Saito

Koji Tanaka

Daisuke Ueda

Hiroshi Yamamoto

Motoharu Ueda

Hironori Kikkawa

Masahiro Ishida

Shuichi Nagai

Naohide Wakita

Norio Chujo

Atsushi Hayami

Eiichi Motoyama

Keiju Kuboki

Kazuya Yamada

Masami Ikeda

Yutaka Udagawa

Kazuo Hikawa

Yoshiharu Anda

Hiroaki Ueno

Shinichi Kohda

Tsuyoshi Ono

Kazunori Nishikawa

Eiichi Nishikawa

Toshihiko Otsubo

Kaoru Kobayashi

Jun Shimizu

Asamira Suzuki

Satoru Kamoto

Yasunari Mizoguchi

Takahisa Hakoishi

Yuichiro Minami

Tamao Ikuta

Mitsuo Akashi

Hiroshi Sugaya

Hideyuki Serizawa

Masanori Kajitani

Hirohisa Takeda

Hiroki Irie

Shinji Fujimoto

Akimasa Tamano

A GaN layer is formed over the substrate. An AlGaN layer is formed on the GaN layer. A first source electrode, a first gate electrode, a second gate electrode, and a second source electrode are formed on or over the AlGaN layer. A first p-type AlGaN layer where 0≤x1<1 is interposed between the first gate electrode and the AlGaN layer. A second p-type AlGaN layer where 0≤x2<1 is interposed between the second gate electrode and the AlGaN layer. The substrate is electrically insulated from all of the first source electrode, the second source electrode, the first gate electrode, and the second gate electrode. The bidirectional switch further includes a terminal used to connect the substrate to a fixed potential node. The terminal is connected to the substrate.

Bidirectional switch, electrical device, and multi-level inverter

A bidirectional switch element includes: a substrate; an AlGaN layer; an AlGaN layer; a first source electrode; a first gate electrode; a second gate electrode; a second source electrode; a p-type AlGaN layer; a p-type AlGaN layer; an AlGaN layer; and an AlGaN layer. The AlGaN layer is formed over the substrate. The AlGaN layer is formed on the AlGaN layer. The AlGaN layer is interposed between the substrate and the AlGaN layer. The AlGaN layer is interposed between the substrate and the AlGaN layer and has a higher C concentration than the AlGaN layer.

Bidirectional switch element

A control system includes a control unit. When turning a bidirectional switch element ON, the control unit controls the bidirectional switch element to cause a time lag between a first timing and a second timing. The first timing is a timing when a voltage equal to or higher than a threshold voltage is applied to one gate electrode selected from a first gate electrode and a second gate electrode. The one gate electrode is associated with one source electrode selected from a first source electrode and a second source electrode and having a lower potential than the other source electrode. The second timing is a timing when a voltage equal to or higher than a threshold voltage is applied to the other gate electrode associated with the other source electrode having a higher potential than the one source electrode.

Control system, switch system, power converter, method for controlling bidirectional switch element, and program

A semiconductor device includes a supporting substrate, a semiconductor chip, a resin member, and a heat-dissipating metal layer. The supporting substrate has a first surface and a second surface located opposite from each other in a thickness direction defined for the supporting substrate. The semiconductor chip includes a plurality of electrodes. The semiconductor chip is bonded to the supporting substrate on one side thereof with the first surface. The resin member has a first surface and a second surface located opposite from each other in a thickness direction defined for the resin member. The resin member covers at least a side surface of the supporting substrate and a side surface of the semiconductor chip. The heat-dissipating metal layer is arranged in contact with the supporting substrate and the resin member to cover the second surface of the supporting substrate and the second surface of the resin member at least partially.

Semiconductor device including heat-dissipating metal multilayer having different thermal conductivity, and method for manufacturing same

A bidirectional switch includes: a first lateral transistor including a first semiconductor layer on the surface of a first conductive layer; a second lateral transistor including a second semiconductor layer on the surface of a second conductive layer; a connection member; a first conductor member; and a second conductor member. The connection member connects the first lateral transistor and the second lateral transistor together in anti-series. The first conductor member electrically connects the first source electrode of the first lateral transistor to the first conductive layer. The second conductor member electrically connects the second source electrode of the second lateral transistor to the second conductive layer.

Bidirectional switch and bidirectional switch device including the switch

A position coordinate difference computing unit (to) calculates position coordinate differences between position coordinates of the output digital signals and position coordinates of the input digital signals adjacent to the position coordinates. An FIR coefficient memory (to) stores FIR coefficients of an FIR-LPF and outputs FIR coefficients corresponding to position coordinate differences between a fixed number of the output digital signals adjacent to the position coordinates of the output digital signals and the output digital signals. A control unit () supplies a group of the FIR coefficients and a group of the input digital signals corresponding to the respective position coordinate differences to the parallel FIR calculator () in predetermined order when the position coordinate differences corresponding to two or more different output digital signals are concurrently computed. The parallel FIR calculator () performs an FIR-LPF interpolating calculation by using those to obtain the output digital signals.

Sampling rate converter

To provide an optical module and a method for aligning the optical module with which alignment can be easily performed. An optical module includes first optical element sections and a second optical element section optically joined to the first optical element sections. Each first optical element section includes an optical conversion element, a ferrule having a distal end being in contact with and optically joined to the second optical element section, and a first optical system disposed in a position where the ferrule and the optical conversion element are optically adjusted. The second optical element section includes joining sections in contact with and joined to, in joining parts, the distal ends of the ferrules, a wavelength multiplexing optical element optically joined to the optical conversion elements, and second optical systems respectively disposed in positions where the wavelength multiplexing optical elements and the joining parts are optically adjusted.

Optical module and method for aligning optical module

A radiation image-pickup device includes: a plurality of pixels configured to generate signal charge based on radiation; and a field effect transistor used to read out the signal charge from the plurality of pixels. The transistor includes a first silicon oxide film, a semiconductor layer, and a second silicon oxide film laminated in order from a substrate side, the semiconductor layer including an active layer, and a first gate electrode disposed to face the semiconductor layer, with the first or the second silicon oxide film interposed therebetween, and the first or the second silicon oxide film or both include an impurity element.

Radiation image-pickup device and radiation image-pickup display system

There is provided a radiation image pickup unit including: a plurality of pixels each configured to generate a signal charge based on a radiation; a device substrate including a photoelectric conversion element for each pixel; a wavelength conversion layer provided on a light incident side of the device substrate, and configured to convert a wavelength of the radiation into other wavelength; and a partition wall separating the wavelength conversion layer for each pixel. The radiation image pickup unit is configured to allow a gap between the wavelength conversion layer and the device substrate to be equal to or larger than a threshold or equal to or smaller than the threshold, the threshold being preset based on a spatial frequency of an image pickup target.

Radiation image pickup unit and radiation image pickup display system

A semiconductor device including a substrate, at least one gate electrode, at least two silicon oxide layers comprising a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than or equal to a thickness of the second silicon oxide layer, and a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer. Also, an image pick-up device and a radiation imaging device including the semiconductor device.

Image pickup unit and image pickup display system

A nitride semiconductor device of the present invention has a source-electrode-side insulator protection film layer disposed between a source electrode and a drain electrode on a second nitride semiconductor layer and formed at least partially covering the source electrode, a drain-electrode-side insulator protection film layer disposed separately from the source-electrode-side insulator protection film layer and formed at least partially covering the drain electrode, and a gate layer formed in contact with the second nitride semiconductor layer between the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and made of a p-type metal oxide semiconductor, and the gate layer has regions opposite to the second nitride semiconductor layer across each of the source-electrode-side insulator protection film layer and the drain-electrode-side insulator protection film layer and a region in contact with the second nitride semiconductor layer.

Nitride semiconductor device and method for manufacturing nitride semiconductor device

A power control deviceis a power control device that controls power supply from an outside to a plurality of power consuming devices, and includes a power supply control devicethat obtains consumed power values of the plurality of power consuming devicesand predicts consumed power values, and controls power supply to the power consuming deviceswhen a prediction value of a total of the obtained consumed power values based on the prediction exceeds a predetermined power value.

Power control device and power consuming device

There is provided a power control apparatus including an input unit to which attribute information regarding a type of generation of power is input, a determination unit configured to determine the type of generation of the power corresponding to the attribute information according to the attribute information, and a power control unit configured to control use of the power according to a determination result by the determination unit.

Power control apparatus, power transmission apparatus, and power control system

A radiation image-pickup device includes: a plurality of pixels each configured to generate signal charge based on radiation; and a field effect transistor used to read the signal charge from each of the plurality of pixels, wherein the field effect transistor includes a semiconductor layer including an active layer and a low concentration impurity layer formed to be adjacent to the active layer, and a first and a second gate electrode disposed to face each other with the active layer interposed therebetween, and one or both of the first and the second gate electrodes are provided in a region not facing the low concentration impurity layer.

A semiconductor device includes a semiconductor switch, a first rectifier circuit, and a second rectifier circuit. The semiconductor switch, the first rectifier circuit, and the second rectifier circuit are integrated on a common board. On the board, a first output terminal of the first rectifier circuit is coupled to a first gate terminal of the semiconductor switch, and a first output reference terminal of the first rectifier circuit is coupled to a first source terminal of the semiconductor switch. On the board, a second output terminal of the second rectifier circuit is coupled to a second gate terminal of the semiconductor switch, and a second output reference terminal of the second rectifier circuit is coupled to a second source terminal of the semiconductor switch.

Semiconductor device, switching system, and matrix converter

Growing community of inventors

Kanagawa, Japan

Yasuhiro Yamada