Nec Corporation

Sony Corporation

Honda Motor Co., Ltd.

Dowa Electronics Materials Co., Ltd.

Konica Minolta, Inc.

Sanyo Electric Co., Ltd.

Tottori Sanyo Electric Co., Ltd.

Nec Infrontia Corporation

Murata Manufacturing Co., Ltd.

Mitsubishi Electric Corporation

Dai Nippon Printing Co., Ltd.

The Furukawa Electric Co., Ltd.

Tokyo Ohka Kogyo Co., Ltd.

Riken Corporation

Ulvac, Inc.

Yasuhiro Watanabe

Osamu Kurokawa

Masaaki Sakano

Naoki Yoshida

Masaru Oda

Seiji Sugiura

Akira Ono

Kohsuke Gonda

Noriaki Ohuchi

Koichi Tanaka

Atsushi Nishio

Takeshi B Nishimura

Hideaki Kikuchi

Hiroto Kawaguchi

Nobuyuki Nagai

Narutoshi Sugita

Masahiro Mohri

Mikio Takenaka

Takashi Sato

Masashi Shiraishi

Hiroaki Ono

Ken Takahashi

Takayuki Kato

Masahiko Sato

Takayuki Kobayashi

Tomohiko Shibata

Kazumi Sato

Daisuke Maeda

Takayuki Kido

Hiroaki Akiyama

Takuo Akimoto

Takehiko Fujita

Yusuke Miyagawa

Kazuki Eguchi

Shuji Sato

Yuichi Takai

Mika Watanabe

Takahiro Takai

Nobuhide Yoneya

Yasunori Kotani

Takeshi Isoda

Nobuhiro Saito

Junichiro Hara

Kentaro Nagoshi

Atsushi Sasaki

Yasuyuki Ueda

Shuji Ichitani

Kazutoshi Nomoto

Satoshi Tanimoto

Atsushi Suzuki

Takeshi Iwai

Shuhei Goto

Kenichi Takahashi

Hiroyuki Hasegawa

Hideharu Naito

Tadashi Nishiyama

Hideki Hirayama

Masaharu Suzuki

Hiroshi Matsuura

Hiroshi Miyazawa

Ryoichi Yoshitomi

Naoyuki Sugeno

Tomoko Katsuhara

Mitsunori Kokubo

Yasuyuki Bessho

Shigeru Inai

Hajime Nakao

Teruyuki Ohtani

Satoru Abe

Tatsuya Adachi

Ryuichi Toba

Atsuo Yamada

Hideki Gouda

Masayuki Nakano

Hisashi Kajiura

Masahiko Tahara

Satoru Terada

Shoji Honda

Takaharu Tashiro

Go Sudo

Naoko Furusawa

Chikara Iwasawa

Yoshihito Kimura

Akihiro Matsui

Ryuichiro Kamimura

Kenji Sakurai

Koki Hayashi

Yamato Osada

Takashi Kosaka

Ryo Tanabe

Koji Ishioka

Yukio Kashima

Masami Okada

Ryuichiro Maruyama

Sho Sakamoto

Hiroyuki Okita

Masayoshi Akita

Norihisa Kobayashi

Masahiro Ise

Eriko Matsuura

A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer. The AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less. A final barrier layer wider in bandgap than the well layer and narrower in bandgap than the AlN guide layer is provided between an Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer.

Group III nitride semiconductor light-emitting element and method of manufacturing same

Provided is a reflective electrode for a deep ultraviolet light-emitting element that enables a balance of both high light emission output and excellent reliability. A method of producing the reflective electrode for a deep ultraviolet light-emitting element includes: a first step of forming Ni with a thickness of 3 nm to 20 nm as a first metal layer on a p-type contact layer having a superlattice structure; a second step of forming Rh with a thickness of not less than 20 nm and not more than 2 μm as a reflective metal on the first metal layer; and a third step of performing heat treatment of the first metal layer and the second metal layer at not lower than 300° C. and not higher than 600° C.

Method of producing reflective electrode for deep ultraviolet light-emitting element, method of producing deep ultraviolet light-emitting element, and deep ultraviolet light-emitting element

An adapter main body is formed by an upper wall plate portion, and a plurality of side wall plate portions vertically placed between both ends of and between the upper wall plate portion. A lower end of each of the side wall plate portions in the adapter main body is fixed to an upper surface of a front end of a bottom plate in a case main body portion of the cassette case, thereby forming a multiple type adapter in which a plurality of adapter single bodies are continuously provided in the upper surface of the bottom plate, the adapter single body having an approximately quadrangular tubular shape in a front view, and a cable accommodating portion of an optical fiber is formed in the cassette case main body portion at the rear of the adapter main body. Therefore, the compact and lightweight adapter can be easily formed.

Cassette case with integrated adapter for optical connector

Provided is an ultraviolet light receiving device having photosensitivity effective to target wavelengths in the ultraviolet region. A Schottky junction ultraviolet light receiving device has the photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, and exhibits a rejection ratio of 10or more, the rejection ratio being the ratio of the responsivity Rp to the peak photosensitivity wavelength to the average of the responsivity Rv to a visible region of 400 nm or more and 680 nm or less (Rp/Rv).

Ultraviolet light receiving device

The group III nitride semiconductor light emitting element according to this disclosure has, on a substrate, an n-type semiconductor layer, a light emitting layer, a p-type AlGaN electron blocking layer, a p-type contact layer and a p-side reflection electrode, in this order, wherein, a center emission wavelength of light emitted from the light emitting layer is 250 nm or greater and 330 nm or smaller, the Al composition ratio of the p-type AlGaN electron blocking layer is 0.40 or greater and 0.80 or smaller, the film thickness of the p-type contact layer is 10 nm or greater and 50 nm or smaller, and the p-type contact layer has a p-type AlGaN contact layer having Al composition ratio of 0.03 or greater and 0.25 or smaller.

Group III nitride semiconductor light emitting element and method of manufacturing the same

Provided is a III-nitride semiconductor light-emitting device having excellent light output power as compared with conventional devices and a method of producing the same. The III-nitride semiconductor light-emitting device has an emission wavelength of 200 nm to 350 nm and includes an n-type semiconductor layer; a light emitting layer in which N barrier layersand N well layers(where N is an integer) are alternately stacked in this order; an AlN guide layer; an electron blocking layer; and a p-type semiconductor layer in this order. The electron block layer is made of p-type AlGaN (0.50≤z≤0.80), and the barrier layers are made of n-type AlGaN (z+0.01≤b≤0.95).

III-nitride semiconductor light-emitting device comprising barrier layers and well layers and method of producing the same

Provided are a III-nitride semiconductor light-emitting device that can reduce change in the light output power with time and has more excellent light output power, and a method of producing the same. A III-nitride semiconductor light-emitting devicehas an emission wavelength of 200 nm to 350 nm, and includes an n-type layer, a light emitting layer, an electron blocking layer, and a p-type contact layerin this order. The electron blocking layerhas a co-doped region layer, the p-type contact layeris made of p-type AlGaN (0&#x2264;x&#x2264;0.1), and the p-type contact layerhas a thickness of 300 nm or more.

III-nitride semiconductor light-emitting device and method of producing the same

The rack-type power supply device includes a plurality of battery modules each of which accommodates a plurality of secondary battery cells, a rack main body that vertically accommodates battery modules in a horizontal posture like a plurality of steps with gaps between the battery modules, and a plurality of cooling fans that are arranged on a front surface side of the rack main body and blow cooling air into the gaps between battery modules. The rack main body also includes a back-side duct in which cooling air having passed through the gaps flows upward on a back surface side of the battery modules. In addition, rack main body includes an air outlet for discharging cooling air having passed through the back-side duct on a top surface side. The cooling fan is disposed to be shifted from the gap between the battery modules in front view of the rack main body.

Rack-type power supply device

A deep ultraviolet LED with a design wavelength &#x3bb;, including a reflecting electrode layer (Au), a metal layer (Ni), a p-GaN contact layer, a p-block layer made of a p-AlGaN layer, an i-guide layer made of an AlN layer, a multi-quantum well layer, an n-AlGaN contact layer, a u-AlGaN layer, an AlN template, and a sapphire substrate that are arranged in this order from a side opposite to the sapphire substrate, in which the thickness of the p-block layer is 52 to 56 nm, a two-dimensional reflecting photonic crystal periodic structure having a plurality of voids is provided in a region from the interface between the metal layer and the p-GaN contact layer to a position not beyond the interface between the p-GaN contact layer and the p-block layer in the thickness direction of the p-GaN contact layer, the distance from an end face of each of the voids in the direction of the sapphire substrate to the interface between the multi-quantum well layer and the i-guide layer satisfies &#x3bb;/2n(where &#x3bb; is the design wavelength and n1Deff is the effective average refractive index of each film of the stacked structure from the end face of each void to the i-guide layer) in the perpendicular direction, the distance being in the range of 53 to 57 nm, the two-dimensional reflecting photonic crystal periodic structure has a photonic band gap that opens for TE polarized components, and provided that the period a of the two-dimensional reflecting photonic crystal periodic structure satisfies a Bragg condition with respect to light with the design wavelength &#x3bb;, the order m of a formula of the Bragg condition: m&#x3bb;/n=2(where m is the order, &#x3bb; is the design wavelength, nis the effective refractive index of two-dimensional photonic crystals, and a is the period of the two-dimensional photonic crystals) satisfies 2&#x2264;m&#x2264;4, and the radius of each void is R, R/a satisfies 0.30&#x2264;R/a&#x2264;0.40.

Deep ultraviolet LED and method for producing the same

Disclosed is a deep ultraviolet light-emitting device which includes on a substratein order: an n-type semiconductor layer, a light-emitting layer, a p-type electron block layer, and a p-type contact layer, wherein the p-type contact layercomprises a superlattice structure having an alternating stack of: a first layermade of AlGaN having an Al composition ratio x higher than an Al composition ratio wof a layer configured to emit deep ultraviolet light in the light-emitting layer; and a second layermade of AlGaN having an Al composition ratio y lower than the Al composition ratio x, and the Al composition ratio w, the Al composition ratio x, the Al composition ratio y, and a thickness average Al composition ratio z of the p-type contact layer satisfy the formula [1] 0.030&#x3c;z&#x2212;w&#x3c;0.20 and the formula [2] 0.050&#x2264;x&#x2212;y&#x2264;0.47.

Deep ultraviolet light-emitting device and method of manufacturing same

A power supply apparatus includes a container including a first conductive material, a plurality of battery racks including a second conductive material, a plurality of electricity storage modules mounted on the battery racks and having grounded portions connected to the battery racks, and a grounding means configured to connect the battery racks to a ground outside the container.

Power supply apparatus

A relay control device includes a coil, a movable iron armature that is switched from an open state to a closed state when the coil is excited, a switching current output circuit that applies first current for switching the movable iron armature from the open state to the closed state to the coil, and a holding current output circuit that applies second current for holding the movable iron armature in the closed state to the coil. The switching current output circuit applies the first current to the coil when a first time has elapsed from when the second current is started to be applied to the coil, and the value of the second current is lower than the value of the first current.

Relay control device

A gateway apparatus () according to the present disclosure is arranged between a node apparatus () that performs communication in accordance with a GTP and an S/P-GW () or an S/P-GW (). The gateway apparatus () includes a communication unit () configured to terminate a GTP message transmitted from the node apparatus (); a determination unit () configured to determine a terminal type of a mobile station associated with the GTP message; and a conversion unit () configured to change a transmission source address set in the GTP message transmitted from the node apparatus () from an identifier of the node apparatus () to a first identifier of the gateway apparatus (), in which the communication unit () transmits, to the S/P-GW () or the S/P-GW () determined in accordance with the terminal type, the GTP message in which the transmission source address has been converted.

Gateway apparatus, communication method, and non-transitory computer readable medium storing program

Provided are a group III nitride semiconductor light emitting element and a method of manufacturing the same. A group III nitride semiconductor light emitting element of the present disclosure comprises in this order, in a substrate, an n-type semiconductor layer, a light emitting layer, a p-type electron blocking layer, a p-type contact layer made of AlGaN, and a p-side reflection electrode, wherein a center emission wavelength of light emitted from the light emitting layer is 270 nm or greater and 330 nm or smaller, the p-type contact layer is in contact with the p-side reflection electrode, and has a thickness of 20 nm or greater and 80 nm or smaller, and the Al composition ratio x of the p-type contact layer satisfies the following Formula:2.09&#x2212;0.006&#xd7;&#x3bb;&#x2264;2.25&#x2212;0.006&#xd7;&#x3bb;

An image processing device (A) comprises: an input means for inputting a brightfield image representing cell morphology in a tissue section, and a fluorescence image representing, by fluorescent bright spots, the expression of a specific protein in the same range of the tissue section; a first generation means for generating a cell image obtained by extracting a specific site of a cell from the brightfield image; a second generation means for generating an image obtained by extracting bright spot regions from the fluorescence image, creating a brightness profile for each bright spot region, and generating a fluorescent particle image obtained by extracting the fluorescent particles in the bright spot regions on the basis of the fluorescence profile for one fluorescent particle, which serves as a fluorescence bright spot source; and a calculation means for superimposing the cell image and the fluorescent particle image on one another.

Image processing device, pathological diagnosis support system, storage medium for image processing, and image processing method

Growing community of inventors

Tokyo, Japan

Yasuhiro Watanabe