Sanyo Electric Co., Ltd.

Yasuhiro Ueda

Takashi Kano

Tatsuya Kunisato

Yasuhiko Matsushita

Katsumi Yagi

Masayuki Shono

Kazushi Mori

Atsushi Tajiri

Minoru Sawada

Yasuaki Inoue

Toyozo Nishida

A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.

Manufacturing method of light emitting device

A six-segment holographic surface is divided into regions by dividing lines. A four-segment photodetection part is divided into four photodetection parts equal in area by a section line substantially parallel to the radial direction of an optical disk and a section line orthogonal thereto. A main light beam diffracted in the regions of the six-segment holographic surface are condensed as spots at positions apart from each other on opposite sides on a section line of the four photodetection parts, and the main beam diffracted in the regions is condensed as spots in the center of the photodetection parts of the four-segment photodetection part.

Optical pickup with a diffraction element consist of six regions providing spatial variation corresponding to a focas state

A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first conductivity type and composed of a III-V group nitride system semiconductor containing In, an undoped cap layer formed on the active layer and composed of a III-V group nitride system semiconductor, and a cladding layer formed on the cap layer and composed of a III-V group nitride system semiconductor of a second conductivity type.

Light emitting device with cap layer

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Hirakata, Japan

Yasuhiro Ueda