Tokyo Electron Limited

Sinfonia Technology Co., Ltd.

Tokyo Electron Limi Ted

Yasuhiro Tobe

Satoru Kawakami

Shinji Matsubayashi

Jun Hirose

Hiraku Ishikawa

Yosuke Muraguchi

Yasumichi Mieno

Yasuyoshi Kitazawa

A plasma processing apparatus includes a mounting table, a power supply unit and a power supply control unit. The mounting table has therein a coil provided along a mounting surface on which a focus ring is mounted. The power supply unit is configured to apply a high frequency voltage to the coil. The power supply control unit is configured to control the power supply unit to increase a power of the high frequency voltage applied to the coil in accordance with consumption of the focus ring.

Plasma processing apparatus and plasma control method

A substrate processing apparatus includes a chamber main body, a stage, a cooling device and a local loop. The stage is provided in an internal space of the chamber main body and a coolant path is formed in the stage. The cooling device is provided at an outside of the chamber main body. The cooling device includes a cooling loop having a compressor, a condenser, an expansion valve and an evaporator. The local loop is provided at a position closer to the chamber main body than the cooling device is. The local loop includes a receiver, a flow velocity controller and an evaporator pressure regulating valve. The receiver stores therein the coolant supplied from the cooling device. In this substrate processing apparatus, the coolant stored in the receiver can be circulated within the local loop.

Substrate processing apparatus, and operation method for substrate processing apparatus

A substrate processing apparatus is provided. The substrate processing apparatus includes: an electro-static chuck configured to retain a substrate on a platform by electrostatic attraction; an ionized gas generation unit configured to ionize a pressure-controlled gas to generate an ionized gas; a gas supplying path, which is made of insulating material or to whose inner surface insulating processing is applied, configured to allow passage of the generated ionized gas; a gas supplying tube configured to supply the ionized gas that has passed the gas supplying path to a gap between the substrate and the electro-static chuck; and a gas exhaust path, which is provided inside the platform, configured to exhaust the gas that has been supplied to the gap.

Substrate processing apparatus and substrate removing method

An object is to provide a vacuum processing apparatus that is capable of suppressing the costs and making control easy. Provided is a vacuum processing apparatus that includes a vacuum section () of which inside is held in vacuum, a placing section () that is disposed inside the vacuum section () and is capable of placing a workpiece thereon, a linear motor) that includes coils () and makes the placing section () travel within the vacuum section, wherein air is placed inside the placing section () while being isolated from the vacuum section (), and the coils () of the linear motor () are disposed inside the placing section ().

Vacuum processing apparatus

A processing apparatus for processing a substrate G includes a processing chamber for processing the substrate; a depressurizing mechanism reducing an internal pressure of the processing chamber; and a transfer mechanism disposed in the processing chamber to transfer the substrate, wherein the transfer mechanism includes: a guide member; a stage for holding the substrate; a driving member for moving the stage; and a movable member supporting the stage and moving along the guide member. The guide member and the movable member are maintained so as not to contact each other by a repulsive force of magnets.

Substrate processing apparatus

Provided is a plasma processing apparatus including a processing vessel accommodating a target object; a microwave generator configured to generate a microwave; a waveguide configured to induce the microwave to the processing vessel; a planar antenna having a plurality of microwave radiation holes through which the microwave induced to the waveguide is radiated toward the processing vessel; a microwave transmission plate configured to serve as a ceiling wall of the processing vessel and transmit the microwave passed from the microwave radiation holes of the planar antenna; a processing gas inlet unit configured to introduce a processing gas into the processing vessel; and a magnetic field generating unit positioned above the planar antenna and configured to generate a magnetic field within the processing vessel and control a property of plasma of the processing gas by the magnetic field, the plasma being generated by the microwave within the processing vessel.

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Miyagi, Japan

Yasuhiro Tobe