Elpida Memory, Inc.

Nec Corporation

Ps4 Luxco S.a.r.l.

Other

Longitude Semiconductor S.a.r.l.

Yasuhiro Takai

Riichiro Takemura

Tomonori Sekiguchi

Satoru Akiyama

Akira Ide

Shotaro Kobayashi

Koji Kuroki

Hiroaki Nakaya

Toshio Sugano

Atsushi Hiraishi

Hiroki Fujisawa

Yasuji Koshikawa

Seiji Narui

Akira Kotabe

Yukio Fukuzo

Disclosed herein is a device that includes a silicon interposer having wiring lines on first and second wiring layers. The wiring lines includes first, second and third wiring lines provided on the first wiring layer and a fourth wiring line provided on the second wiring layer. The third wiring line is arranged between the first and second wiring lines on the first wiring layer. The fourth wiring line is overlapped with the third wiring line. Each of the first, second and fourth wiring lines conveys a power supply potential to first and second semiconductor chips mounted on the silicon interposer, and the third wiring line conveys a first signal communicated between the first and second semiconductor chips.

Semiconductor device having silicon interposer on which semiconductor chip is mounted

Disclosed herein is a device including a timing control circuit that receives a strobe signal supplied from outside to generate an internal strobe signal that is used as a timing signal to latch a data signal. An operation state of the timing control circuit is changed according to temperature change so as to keep an output timing of the internal strobe signal with respect to an input timing of the strobe signal.

Semiconductor device latching data signal in response to strobe signal and information processing system including the same

Disclosed herein is a device that includes: a data strobe terminal; a data terminal; a first output driver coupled to the data strobe terminal; a second output driver coupled to the data terminal; and a data control circuit configured to enable the first and second output drivers to function as termination resistors in different timings from each other.

Semiconductor device having ODT function

Disclosed is a timing control circuit which receives a first clock having a period Tand a group of second clocks of L different phases (where L is a positive integer) spaced apart from each other at substantially equal intervals and which generates a fine timing signal delayed from the rising edge of the first clock by a delay td of approximately td=m&#xb7;T+n&#xb7;(T/L), where m and n are non-negative integers. The timing control circuit has a coarse delay circuit and a fine delay circuit. The coarse delay circuit counts the rising edges of the first clock after an activate signal is activated and generates a coarse timing signal delayed from the first clock by approximately m&#xb7;T. The fine delay circuit has a circuit which, after the activate signal is activated, detects a second clock, which has a rising edge that immediately follows the rising edge of the first clock, from among the group of L-phase second clocks. Using the edge-detection information, the fine delay circuit generates a fine timing signal for which the amount of delay from the coarse timing signal is approximately n&#xb7;(T/L). The values of m and n can be set by registers.

Timing control circuit and semiconductor storage device

A duty correction circuit is formed using at least one delay circuit, which is constituted of a first inverter including three transistors of different conduction types and a second inverter including three other transistors of different conduction types and which delays and adjusts an input clock signal at the leading-edge/trailing-edge timing so as to convert it into an output clock signal based on a first or second bias voltage produced by a bias circuit detecting the duty ratio of the output clock signal. The duty correction circuit decreases the high-level period of the output clock signal having a high duty ratio based on the first bias voltage. Alternatively, the duty correction circuit increases the high-level period of the output clock signal having a low duty ratio based on the second bias voltage.

Duty correction circuit

Disclosed is a semiconductor device including a first clock generator that generates a first clock signal having a first period from an input clock signal, a second clock generator that generates a second clock signal having a second period from the input clock signal, and a timing generator that receives the first clock signal, the second clock signal, an activation signal from a command decoder and a selection signal for selecting the delay time from a timing register to produce a timing signal delayed as from activation of the activation signal by a delay equal to a sum of a time equal to a preset number m prescribed by the selection signal times the first period and a time equal to another preset number n prescribed by the selection signal times the second period. The timing register holds the values of m and n. These values are set in the timing register in an initialization sequence at the time of a mode register set command. In the operating states, the timing signals are output from the timing generator at a desired timing based on the information stored in the timing register (FIG.).

Semiconductor device

A DLL circuit includes a coarse delay adjustment circuit and a fine delay adjustment circuit, which further includes a first fine delay circuit and a second fine delay circuit serving as an interpolation circuit. The coarse delay adjustment circuit delays a reference clock signal by a plurality of delay stages so as to provide the first fine delay circuit with two phase signals having the phase difference of two delay stages, which are then converted into two delay signals having the phase difference of one delay stage. The delay signals are subjected to interpolation, thus producing an output clock signal. Due to a reduction of the phase difference in the first fine delay circuit, it is possible to reduce the minimum operation cycle of the interpolation circuit and to thereby increase the maximum operation frequency of the DLL circuit.

DLL circuit

Disclosed is a timing control circuit that receives a first clock having a period T, a group of second clocks of L different phases spaced apart from each other at substantially equal intervals and selection signals m, n supplied thereto and generates a fine timing signal delayed from the rising edge of the first clock signal by a delay td of approximately td=m&#xb7;T+n&#xb7;(T/L). The timing control circuit includes a coarse delay circuit and a fine delay circuit. The coarse delay circuit includes a counter for counting a rising edge of the first clock signal after an activate signal is activated and generates a coarse timing signal whose amount of delay from the first clock signal is approximately m&#xb7;T. The fine delay circuit comprises L-number of multiphase clock control delay circuits disposed in parallel, delays by n&#xb7;T/L the timing of sampling of the coarse timing signal by respective clocks of the group of L-phase second clocks, and takes the OR among the resulting delayed pulses to thereby produce the fine timing signal.

A timing control circuit DLYreceives clock signal CKa with period Tand activation signal ACT and outputs fine timing signal FT with delay of m*T+tda measured from the clock signal where m denotes a non-negative integer and tda denotes delay in the analog delay element. The timing control circuit DLYcomprises a coarse delay circuit CD and a fine delay circuit FD. The coarse delay circuit CD comprises a counter for counting a rising edge of the clock signal CKa after receiving activation signal ACT and outputs coarse timing signal CT with delay of m*Tmeasured from a rising edge of the clock signal CKa. The fine delay circuit FD comprises a plurality of analog delay elements and outputs fine delay timing signal FT with delay of tda measured from the coarse timing signal CT. Variation in delay of timing signal is reduced.

Timing control circuit, timing generation system, timing control method and semiconductor memory device

A duty detection circuit includes discharge transistors, charge transistors, detection lines, and a comparator circuit that detects a potential difference of these detection lines, and also includes a gate circuit that controls the discharge transistors and the charge transistors in response to the internal clock signal of an even cycle. As a result, the detection lines are charged and discharged in response to the internal clock signal of the even cycle. Consequently, the duty detection circuit can be applied to a multi-phase DLL circuit, and a potential difference appearing in the detection line can be sufficiently secured.

Duty detection circuit, DLL circuit using the same, semiconductor memory circuit, and data processing system

A voltage controlled oscillator that is a differential ring oscillator type voltage controlled oscillator that, by connecting in cascade differential delay elements to which differential clock signals of a mutually reverse phase are input and controlling the current that flows to the differential delay elements by a bias voltage, controls a delay amount of this differential clock signal, having a phase detection portion that outputs a detection signal by comparing an output voltage of the differential output of any differential delay element and a reference voltage that is set to a voltage that detects an abnormal operation, and a cross-coupled circuit that is provided at each of the differential delay elements and, when the detection signal is input, amplifies the potential difference between the pair of differential output terminals.

Voltage controlled oscillator

A DLL circuit includes a delay line (CDL) () that delays a clock signal at a relatively coarse adjustment pitch, a delay line (FDL) () that delays the clock signal at a relatively fine adjustment pitch, and phase detecting circuits and counter control circuits that control delay amounts of the delay lines (). The counter control circuits control the delay line () by a linear search method, and control the delay line () by a binary search method. As a result, even when the number of bits of the count signal for adjusting the delay line () is increased, a delay amount can be determined at a high speed.

DLL circuit, semiconductor memory device using the same, and data processing system

Disclosed is a semiconductor memory device, in which the refresh period of a fail cell or cells is set so as to be shorter than that of the normal cells, comprises a control circuit for exercising control in such a manner that, if, when refreshing the cell of a first address, generated responsive to a refresh command, with an input control signal being of a first value, a second address, differing as to the value of a predetermined bit from the first address, is determined to correspond to a fail cell, based on the information ore-programmed in a refresh redundant ROM, the cell of the second address is refreshed, and also in such a manner that, if, with the input control signal of a second value, the second address, differing as to the value of a predetermined bit from the first address, is determined to correspond to a fail cell, based on the predetermined information, only the cell of the second address is refreshed, without refreshing the cell of the first address, generated responsive to the refresh command.

Semiconductor memory device and test method therefor

A DLL circuit comprising: delay circuits which output first and second delayed clock signals obtained by delaying the reference clock signal by a delay times selected according to control signals; an interpolation circuit which interpolates a phase difference between the delayed clock signals to output an internal clock signal; an output circuit which generates a predetermined signal; a dummy output circuit which has the same transmission characteristics as the output circuit and outputs a feedback clock signal having the same phase as the predetermined signal; a phase comparison circuit which compares phases of the reference clock signal and the feedback clock signal; delay control circuits which controls the control signals in a direction where both phases are equal; wherein the delay time of the second delayed clock signal is larger than the first delayed clock signal by an amount equivalent to one cycle of the reference clock signal.

Growing community of inventors

Tokyo, Japan

Yasuhiro Takai