Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Industrial Co., Ltd.

Yasuhiro Sugaya

Toshiyuki Asahi

Seiichi Nakatani

Shingo Komatsu

Yoshiyuki Yamamoto

Koichi Hirano

Osamu Inoue

Tousaku Nishiyama

Yasuyuki Matsuoka

Keiji Onishi

Yoshihisa Yamashita

Mitsuo Satomi

Koichi Kugimiya

Yukihiro Ishimaru

Ken Hirota

Yutaka Taguchi

Mikinari Shimada

Yoshihiro Bessho

Junichi Kato

Seiji Karashima

Satoru Yuhaku

Katsunori Moritoki

Hideki Iwaki

Hidenori Katsumura

Akihiko Namba

Masaaki Katsumata

Katsumasa Miki

Shinya Tokunaga

Hiroyuki Ishitomi

Satoru Yuuhaku

Yoshinobu Idogawa

Kazuo Ohtani

Takeshi Nakayama

Toshio Ishizaki

Toru Yamada

Hiroaki Suzuki

Masaya Sumita

Osamu Shibata

Joji Fujiwara

Tetsuyoshi Ogura

Takashi Ichiryu

Hajime Nishino

Toshiyuki Kojima

Kazuhide Uriu

Tatsuo Sasaoka

Eiji Kawamoto

Toshio Fujii

Tsuyoshi Himori

Tomoya Maekawa

Michiaki Tsuneoka

Tetsuyosi Ogura

Kazuhiko Honjo

Takanori Maruo

Chie Sasaki

Hiroyoshi Yoshida

Yoshiyuki Saitou

A winding-start region that is closer to a winding-start side than a positive electrode core exposed part has positive electrode mixture unit amounts of a positive electrode inner mixture layer and a positive electrode outer mixture layer that are approximately uniform or increasing toward a winding-end side in the winding direction. A winding-start facing region has negative electrode mixture unit amounts of a negative electrode inner mixture layer and a negative electrode outer mixture layer that are approximately uniform or increasing toward the winding-end side. The positive electrode inner mixture layer and the positive electrode outer mixture layer each have a positive electrode mixture unit amount that differs at two or more locations, excluding the positive electrode core exposed part. The negative electrode inner mixture layer and the negative electrode outer mixture each have a fluctuating part where the negative electrode mixture unit amount fluctuates toward the winding-end side.

Winding-type electrode body of non-aqueous electrolyte secondary battery, and non-aqueous electrolyte secondary battery

A semiconductor device includes a metal plate capacitor that includes a heat-resistant metal plate and a capacitor unit including a sintered dielectric formed on at least one surface of the heat-resistant metal plate, a semiconductor chip disposed on the metal plate capacitor, a connector configured to electrically connect the semiconductor chip and the metal plate capacitor, and a protector configured to protect the semiconductor chip, the metal plate capacitor, and the connector.

Semiconductor device, package, and vehicle

Jitter that becomes a problem in a semiconductor part which performs high-speed signal processing is reduced. A semiconductor device includes a heat-resistant metal plate, a capacitor part having a lower electrode, a sintered dielectric part, and an upper electrode that are formed on one or more surfaces of the heat-resistant metal plate, a semiconductor chip fixed on the capacitor part, a wire for electrically connecting a lead frame to the semiconductor chip and the upper electrode, and a mold part in which at least the capacitor part and the semiconductor chip are buried. The semiconductor chip, the electrode, the metal plate, and the like are electrically connected with each other via first, second, and third wires.

Semiconductor device, embedded capacitor unit, semiconductor package, and method of manufacturing embedded capacitor unit

A passive component incorporating interposer includes a double-sided circuit board () having a wiring layer () on both sides, a passive component () mounted on the wiring layer () on one surface of the double-sided circuit board (), a second insulating layer () made of woven fabric or non-woven fabric or inorganic filler and thermosetting resin laminated on the surface of the double-sided circuit board () mounted with the passive component (), a first insulating layer () made of woven fabric or non-woven fabric or inorganic filler and thermosetting resin laminated on the other surface of the double-sided circuit board () not mounted with the passive component (), first and second wiring layers () formed on the first and second insulating layers (), and a through hole () for electrically connecting the wiring layers () disposed on both surfaces of the double-sided circuit board () and the first and second wiring layers (), where the first wiring layer () is formed to enable mounting of a semiconductor element ().

Passive component incorporating interposer

A transfer material capable of transferring a fine wiring pattern to a substrate reliably and easily. The transfer material includes at least three layers of a first metal layer as a carrier, a second metal layer that is transferred to the substrate as a wiring pattern, and a peel layer adhering the first and second metal layers releasably. On the surface portion of the first metal layer, a concave and convex portion corresponding to the wiring pattern is formed, and the peel layer and the second metal layer are formed on a region of the convex portions.

Transfer material used for producing a wiring substrate

A multilayered substrate includes a plurality of circuit boards including a plurality of wiring layers including a grounding layer and a power layer, a solid electrolytic capacitor having an insulative oxide film layer, an electrolytic layer, and a conductor layer sequentially formed on one surface or both surfaces of a foil-like metal substrate, and a conductive substance passing through the circuit board across a thickness thereof. The solid electrolytic capacitor is disposed to be held between the plurality of circuit boards. The conductor layer is connected to a grounding electrode formed on the grounding layer, the foil-like metal substrate being connected to a power electrode formed on the power layer.

Multilayer wiring board

The mounting board has a capacitor-forming sheet made from a valve metal, first and second board-forming structures, first and second electrodes, an extractor electrode, and a conductive polymer. The capacitor-forming sheet has an inner layer and a rough oxide film on at least one face of the inner layer. The first board-forming structure is provided on a face of the capacitor-forming sheet, and the second board-forming structure is provided on another face thereof on a side opposite to the first one. The first and second electrodes are isolated to each other and provided on a surface of at least one of the first and second board-forming structures. The extractor electrode and conductive polymer are provided inside at least one of the first and second board-forming structures. The extractor electrode electrically-connects the first electrode with the inner layer. The conductive polymer electrically-connects the second electrode with the rough oxide film.

Mounting board, mounted body, and electronic equipment using the same

An electronic component built-in module according to the present invention includes a pair of opposed circuit substrates, each of which includes a wiring pattern and an insulating base material containing a resin, an insulating layer that is placed between the pair of circuit substrates and contains an inorganic filler and a resin composition containing a thermosetting resin, an electronic component that is embedded in the insulating layer, and an inner via that is provided in the insulating layer so as to make an electrical connection between wiring patterns provided on different circuit substrates. A glass transition temperature Tg1 of the resin composition contained in the insulating layer and a glass transition temperature Tg2 of the insulating base material included in each of the circuit substrates satisfy a relationship Tg1&#x3e;Tg2.

Electronic component built-in module and method of manufacturing the same

A semiconductor device () of the present invention includes a semiconductor element () including electrode parts (), and a wiring substrate () including an insulation layer (), electrode-part-connection electrodes () provided in the insulation layer (), and external electrodes () that is provided in the insulation layer () and that is connected electrically with the electrode-part-connection electrodes (), in which the electrode parts () and the electrode-part-connection electrodes () are connected electrically with each other. The insulation layer () has an elastic modulus measured according to JIS K6911 of not less than 0.1 GP a and not more than 5 GPa, and the electrodes () and the electrode-part-connection electrodes () are connected by metal joint.

Semiconductor device and method for manufacturing the same

A circuit board with an built-in electronic component according to the present invention includes an insulating layer, a first wiring pattern provided on a first main surface of the insulating layer, a second wiring pattern provided on a second main surface different from the first main surface of the insulating layer, and an electronic component such as a semiconductor chip or the like provided in an internal portion of the insulating layer. The electronic component includes a first external connection terminal formed on a first surface and a second external connection terminal formed on a second surface different from the first surface. The first external connection terminal is connected electrically to the first wiring pattern, and the second external connection terminal is connected electrically to the second wiring pattern.

Circuit board with built-in electronic component and method for manufacturing the same

A component built-in module includes an insulating layer, wirings integrated with both surfaces of the insulating layer, a via connecting the wirings, and one or more components selected from an electronic component and a semiconductor, which is embedded inside of the insulating layer. In this module, at least one of the wirings is formed on a surface of a wiring board, and the components embedded inside of the insulating layer are mounted on and integrated with the wiring board before embedding. This configuration allows the components such as a semiconductor to undergo a mounting inspection and a property inspection before embedding. As a result, the yields of the module can be improved. In addition, since the components are integrated with the wiring board and embedded, the strength thereof can be enhanced.

Component built-in module and method for producing the same

A surface acoustic wave device which occupies a small mounting area and has a low profile, yet having an improved reliability, and can be made available at low cost. The surface acoustic wave device comprises a piezoelectric substrate, a function region formed of comb-like electrodes for exciting surface acoustic wave provided on a main surface of the piezoelectric substrate, a space formation member covering the function region, a plurality of bump electrodes provided on a main surface of the piezoelectric substrate and a terminal electrode provided opposed to the main surface of piezoelectric substrate. The bump electrode and the terminal electrode are having a direct electrical connection, and a space between piezoelectric substrate and terminal electrode is filled with resin. When the above-configured acoustic wave device is applied for a frequency filter, a resonator, in a portable telephone unit, a keyless entry or the like communication apparatus, the overall size of such apparatus can be reduced and a higher reliability is implemented.

Method for manufacturing surface acoustic wave device

A module with a built-in circuit component of the present invention includes an electric insulating layer, a pair of wiring layers provided on both principal planes of the electric insulating layer, a plurality of via conductors electrically connecting the pair of wiring layers and passing through the electric insulating layer in a thickness direction thereof, and a circuit component buried in the electric insulating layer, wherein the plurality of via conductors are disposed in a circumferential portion of the electric insulating layer in accordance with a predetermined rule. The plurality of via conductors are placed at an interval, for example, so as to form at least one straight line, in a cut surface of the electric insulating layer in a direction parallel to a principal plane thereof.

Module with built-in circuit component and method for producing the same

An optical transmission board is provided. The optical transmission board includes an optical transmission channel, a retention board for retaining the optical transmission channel and circuit patterns. The circuit patterns are formed on the retention board and a part of the circuit patterns is used as an electric circuit. The optical transmission channel is positionally regulated by the part of the circuit patterns.

Optical transmission channel board, board with built-in optical transmission channel, and data processing apparatus

A component built-in module including a core layer formed of an electric insulating material, and an electric insulating layer and a plurality of wiring patterns, which are formed on at least one surface of the core layer. The electric insulating material of the core layer is formed of a mixture including at least an inorganic filler and a thermosetting resin. At least one or more of active components and/or passive components are contained in an internal portion of the core layer. The core layer has a plurality of wiring patterns and a plurality of inner vias formed of a conductive resin. The electric insulating material formed of the mixture including at least an inorganic filler and a thermosetting resin of the core layer has a modulus of elasticity at room temperature in the range from 0.6 GPa to 10 GPa. Thus, it is possible to provide a thermal conductive component built-in module capable of filling the inorganic filler with high density; burying the active component such as a semiconductor etc. and the passive component such as a chip resistor, a chip capacitor, etc. in the internal portion of the substrate; and simply producing a multilayer wiring structure.

Growing community of inventors

Osaka, Japan

Yasuhiro Sugaya