Tohoku University

Ca, Inc.

Tokyo Electron Limi Ted

Tohoku Techno Arch Co., Ltd.

Piezo Studio Inc.

Yasuhiro Shoji

Akira Yoshikawa

Yuui Yokota

Shunsuke Kurosawa

Kei Kamada

Yuji Ohashi

Akira Suzuki

Norihiko Amikura

Risako Miyoshi

Kazuyuki Miura

Yui Yokota

Yu Igarashi

Mototaka Arakawa

Kenji Inoue

Rikito Murakami

Akihiro Yamaji

Toetsu Shishido

Tetsuo Kudo

Hiroshi Yazaki

Takahiko Horiai

Takayuki Nihei

The present invention makes clear and defines a congruent composition of a langasite-based oxide, and establishes a method of manufacturing a crystal by any desired composition of AEME(GaAl)SiO(AE is an alkaline-earth metal, ME is Nb or Ta, 0&#x2264;x&#x2264;1, &#x2212;0.5&#x3c;a&#x2264;0 or 0&#x3c;a&#x3c;0.5, &#x2212;0.5&#x3c;b&#x2264;0 or 0&#x3c;b&#x2264;0.5, and &#x2212;0.5&#x3c;c&#x2264;0 or 0&#x3c;c&#x3c;0.5, excluding a=b=c=0). This makes it possible to suppress the formation of an impurity, and improve the yield and crystal manufacturing rate. The raw material is a raw material mixture prepared by mixing an alkaline-earth metal or its carbonate or oxide, Nb or Ta or its oxide, Ga or its oxide, Al or its oxide, and Si or its oxide.

Crystal material and method of manufacturing the same

A substrate processing system includes a substrate processing apparatus and a measurement apparatus. The substrate processing apparatus includes a gas supply unit. The gas supply unit includes a flow rate controller and a secondary valve. The secondary valve is connected to a secondary side of the flow rate controller. The secondary valve is opened when a voltage is output from a first controller of the substrate processing system through a wiring. The measurement apparatus measures the flow rate of the gas output from the flow rate controller according to the instruction from the first controller. The measurement apparatus includes a second controller. The measurement apparatus includes a relay provided on the wiring. The second controller is configured to control the relay.

Substrate processing system and method of determining flow rate of gas

An illuminant has a short fluorescence lifetime, high transparency, and high light yield and a radiation detector uses the illuminant. The illuminant is appropriate for a radiation detector for detecting gamma-rays, X-rays, &#x3b1;-rays, and neutron rays, and has high radiation resistance, a short fluorescence decay time and high emission intensity. The illuminant has a garnet structure using emission from the 4f5d level of Ce, and includes a garnet illuminant prepared by co-doping of at least one type of monovalent or divalent cation at a molar ratio of 7000 ppm or less with respect to all cations, to an illuminant having a garnet structure represented by general formula CeREMO(where 0.0001&#x2264;x&#x2264;0.3, 0&#x2264;y&#x2264;0.5 or 0&#x2264;y&#x2264;&#x2212;0.5, M is one type or two or more types selected from Al, Lu, Ga, and Sc, and RE is one type or two or more types selected from La, Pr, Gd, Tb, Yb, Y, and Lu).

Illuminant and radiation detector

A crystal material that is represented by a general formula (1): (REABM')(Si,M&#x2033;)O(1), the crystal material having a pyrochlore type structure, being a nonstoichiometric composition, and being a congruent melting composition, wherein in Formula (1), A contains at least one or more selected from Gd, Y, La, Sc, Yb, and Lu; B contains at least one or more selected from La, Gd, Yb, Lu, Y, and Sc; 0.1&#x2264;y&#x3c;0.4; RE contains at least one or more selected from Ce, Pr, Nd, Eu, Tb, and Yb; 0&#x3c;x&#x3c;0.1; M&#x2032; and M&#x2033; contain at least one or more selected from Li, Na, K, Mg, Ca, Sr, Ba, Ti, Zr, Hf, Fe, Ta, and W; 0&#x2264;s&#x3c;0.01 and 0&#x2264;t&#x3c;0.01; and 0&#x3c;|&#x3b1;|&#x3c;0.3 and 0&#x2264;|&#x3b2;|&#x3c;0.3 and 0&#x2264;|&#x3b3;|&#x3c;0.5.

Crystal material, method for manufacturing crystal, radiation detector, nondestructive inspection apparatus, and imaging apparatus

A crystal material represented by a general formula (1):(GdLaMERE)MMO&#x2003;&#x2003; (1),where ME is at least one selected from Y, Yb, Sc, and Lu; RE is Ce or Pr; MM is at least one selected from Si and Ge; and ranges of x, y, and z are represented by the following (i): (i) 0.0&#x2266;x+y+z&#x3c;1.0, 0.05&#x2266;x+z&#x3c;1.0, 0.0&#x2266;y&#x3c;1.0, and 0.0001&#x2266;z&#x3c;0.05 (where, when RE is Ce, y=0 is an exception).

Crystal material, radiation detector, imaging apparatus, nondestructive inspection apparatus, and lighting apparatus

Growing community of inventors

Miyagi, Japan

Yasuhiro Shoji