Hitachi, Ltd.

Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Fuji Xerox Co., Ltd.

Director-general of the Agency of Industrial Science and Technology

Other

Kabushiki Kaisha Toshiba

Yashuhiro Shiraki

Yasuhiro Shiraki

Yoshifumi Katayama

Yoshimasa Murayama

Eiichi Maruyama

Takao Kuroda

Kiichi Ueyanagi

Tomoyoshi Mishima

Makoto Morioka

Akitoshi Ishizaka

Yasushi Sawada

Yasuji Seko

Toshiyuki Usagawa

Katsuhiko Omae

Makoto Matsui

Susumu Takahashi

Kazuhiro Watanabe

Satoshi Azuma

Toshihisa Tsukada

Hideo Nakayama

Naoki Chinone

Shigeki Takahashi

Takushi Jimichi

Hisanori Yamasaki

Yuichi Ono

Sho Kato

Nobuaki Ueki

Hiromi Otoma

Ken Yamaguchi

Hideki Fukunaga

Toshikazu Shimada

Michiharu Nakamura

Naoki Nishio

Takayoshi Miki

Kenji Hiruma

Norikazu Hashimoto

Ryo Yokozutsumi

Hirokazu Matsubara

Jun-ichi Ohwada

Hisato Umemaru

Akihiro Murahashi

Tetsuo Sugahara

Nobuyuki Haruna

Satoshi Yoneda

Akira Shintani

Shinsuke Kadoi

Yasutsugu Takeda

Yutaro Kitagawa

Yoshimitsu Takahata

Masaharu Yuhara

Yasuaki Gotoh

Takashi Ohshima

Kiyokazu Nakagawa

Kazuhito Okishio

An electric vehicle control device includes a first inverter controlling a first group defined by induction motors, and a second inverter controlling a second group defined by induction motors. The first inverter and the induction motors of the first group are connected to each other by a first conductor. The second inverter and the induction motors of the second group are connected by a second conductor. A first length is equal to or less than three times the average value of a second length and a third length. The first length is an inter-center distance between the first conductor and the second conductor, the second length is the maximum length of a conductor portion of the first conductor in the cross section of the first conductor, and the third length is the maximum length of a conductor portion of the second conductor in the cross section of the second conductor.

Electric vehicle control device

Provided is a choke coil capable of improving a noise reduction effect by sufficiently attenuating magnetic field coupling between the choke coil and a metal part. A connector connection line includes: a first connection line led out from a connector conductor side of a coil main body of a winding wire along a y-axis direction away from the coil main body; a second connection line led out from the first connection line at a corner portion of a first pier column or a second pier column along a x-axis direction away from a connector conductor; a third connection line led out from the second connection line along a z-axis direction toward a lower yoke; and a fourth connection line led out from the third connection line along the x-axis direction toward the connector conductor.

Choke coil

A motor includes a stator formed by stacking a plurality of core sheets. A plurality of stator windings are wound around a plurality of tooth portions of the stator. A rotor is freely rotatable on an inner peripheral side of the stator. A noise bypass line has one end connected to a core back portion of an outermost core sheet included in the stator and another end grounded to a ground (GND) of a power conversion circuit that drives the motor.

Rotating electric machine

A dual-mode choke coil includes: a lower core that has a first through fourth columnar body; a first upper core and a second upper core; a first coil in which two coil conductors are respectively wound onto the first columnar body and a third columnar body in mutually different directions and are connected in series; and a second coil in which two coil conductors are respectively wound onto a second columnar body and the fourth columnar body in mutually different directions and are connected in series, and in which the winding direction of the coil conductor of the second columnar body is the same as that of the coil conductor of the first columnar body. With this configuration, both common mode noise and normal mode noise can be reduced.

Dual-mode choke coil and high-frequency filter using same, and on-board motor integrated electric power steering and on-board charging device

A power conversion device includes an inverter that drives a motor; a fin that cools down the inverter; a first core including a through hole that allows passage of a positive side conductor that connects a power supply system and the inverter and a negative side conductor that grounds the inverter; a ground conductor that grounds the fin; a ground conductor that grounds a motor yoke via a capacitor; and a ground conductor including one end that is connected to the negative side conductor or the ground conductor and the other end that is grounded.

Power conversion device with reduced noise source current, reduced high frequency current and reduced resonance current

This invention provides an electronic control unit is capable of suppressing electromagnetic noise having a frequency band used in a portable wireless apparatus, and capable of exhibiting a noise resistance property against electromagnetic noise. The electronic control unit including a constant voltage power supply circuit portion, an analog signal inputting circuit portion, and a conversion processing circuit portion, an analog sensor and a driving power supply being connected to the outside, and the unit being connected to the analog sensor through a power supply line and a signal line, in which the analog signal inputting circuit portion includes a current limiting circuit portion, an integrating circuit portion, a current limiting resistor, a signal noise absorbing circuit, and a first bypass capacitor, and capacitance (C) and parasitic inductance (L) of the first bypass capacitor are set in a range of 7&#xd7;10&#x3c;1/[2&#x3c0;&#x221a;(LC)]&#x3c;35&#xd7;10.

Electronic control unit

A multi-layer printed board including signal layers, each signal layer including a signal line, a through-hole, and a ground through-hole. The signal layer includes a land connecting the through-hole and the signal line. An external periphery of the land has a first portion farthest from a center of the land, and a second portion extending a shorter distance from the center of the land than the first portion. A portion of the external periphery of the land opposite to the ground through-hole closest to the center of the land is the second portion. Consequently, impedance matching can be improved even if a signal frequency is high.

Multi-layer printed board

Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.

Semiconductor device

In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.

Semiconductor laser device

It is an object of the present invention to provide a highly efficient semiconductor laser unit having excellent temperature characteristics, in which electrons or holes are suppressed from overflowing from the active layer to the cladding layers while the threshold of current density is maintained low. The present invention is to provide a semiconductor laser unit fundamentally composed of an active layer and cladding layers in which the active layer is interposed between the cladding layers the semiconductor laser unit comprising: a multiquantum barrier layer including well layers and barrier layers disposed between the active layer and the cladding layers or disposed in the cladding layers close to the active layer, wherein the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to .GAMMA.-point in the reciprocal lattice space, and also the well and barrier layers have a high reflectivity with respect to the electrons and holes at a position close to at least one of the primary symmetrical points.

Multiquantum barrier laser having high electron and hole reflectivity of

In a method of forming a pattern in semiconductor device manufacturing process, a thin film consisting of a silicon nitride film is formed on a substrate. Ga ions are implanted by a focussed ion beam into a selected region of the thin film. At this point, a pattern to be formed is defined by the selected region. Subsequently, the thin film is dry etched by CF.sub.4. At this point, the selected region into which the ions are implanted functions as an etching inhibition region.

Method of forming a pattern in semiconductor device manufacturing process

Films of desired metal, e.g., Ni or Co, and of Si are laminated alternately n a single crystal silicon substrate to form a multi-layered structure, and thereafter the substrate is heated to grow an epitaxial NiSi.sub.2 or CoSi.sub.2 film in solid phase with less diffusion of Ni or Co atoms into the silicon substrate. Each layer in the multi-layered structure has a thickness selected in the range of 30-300 A with the overall composition ratio Si/Ni (or Si/Co) in the range of 1.8-2.0. The lamination process is done at a substrate temperature which does not cause the laminated films to react with the substrate and does not cause the multi-layered structure to become polycrystalline, e.g. below 350.degree. C. for the formation of an NiSi.sub.2 film or below 450.degree. C. for the formation of a CoSi.sub.2 film. The solid phase epitaxy is achieved at a substrate heating temperature in a range of 350.degree.-750.degree. C. for the formation of an epitaxial NiSi.sub.2 film or 450.degree.-1000.degree. C. for the formation of a CoSi.sub.2 film.

Method of forming a metal silicide film

In a display device having, at least, picture elements which are arrayed on a transparent insulating substrate, and transistor portions which are formed of a semiconductor layer formed on the transparent insulating substrate; a display device characterized in that, at least, interconnection parts of the transistor portions extend above the semiconductor layer formed on the transparent insulating substrate. The disconnection of the interconnection parts can be avoided.

Display device

An epitaxial crystal grown layer structure which permits, on an In-doped GaAs substrate, which will be industrially used in large quantities, the growth of an epitaxial layer having the same good quality as the epitaxial layer grown on an undoped GaAs substrate.

Semiconductor device having strained superlattice buffer layers with

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Hino, Japan

Yasuhiro Shiraki