Renesas Electronics Corporation

Oki Electric Industry Co., Ltd.

Sony Corporation

Yasuhiro Shirai

Taku Sugawara

Akira Hagiwara

Toshiaki Igarashi

Naoji Akutsu

Masatoshi Maeda

Yuya Abiko

Akio Ichimura

Shin Ogata

Yoshitaro Kondo

Yusuke Sugawara

Toshiya Nozawa

Shoichi Kamimura

Susumu c/o Sony Emcs Corporation Morita

A measuring device and measuring system which accurately measure a pulse wave propagation velocity. The measuring instrument includes: a fixing part attachable to and detachable from a subject; a first piezoelectric sensor fixed to the fixing part; a second piezoelectric sensor fixed to the fixing part at a prescribed distance from the first piezoelectric sensor; and an analyzing part for calculating a pulse wave propagation velocity in the subject according to time difference between time of detection of peak voltage by the first piezoelectric sensor and time of detection of peak voltage by the second piezoelectric sensor, and the prescribed distance.

Measuring instrument and measuring system

Erroneous mounting of a semiconductor power module can be more easily detected. A semiconductor power module () according to the present invention includes: a status signal generation unit () configured to detect a status in the semiconductor power module () and generate and output a status signal indicating the detected status; an identification information storage unit () configured to preliminarily store identification information for identifying the semiconductor power module () and output an identification signal indicating the identification information; and a switching unit () configured to select one of the status signal output from the status signal generation unit () and the identification signal output from the identification information storage unit () and output the selected signal to an outside of the semiconductor power module ().

Semiconductor power module and drive system for electric motor

To improve characteristics of a semiconductor device (vertical power MOSFET). A spiral p-type column region having a corner is formed in a peripheral region surrounding a cell region in which a semiconductor element is formed. In an epitaxial layer of the peripheral region surrounding the cell region in which the semiconductor element is formed, a trench spirally surrounding the cell region and having the first and second side faces making up the corner is formed and the trench is filled with the epitaxial layer. By spirally arranging the p-type column region (n-type column region) in such a manner, a drop in a withstand voltage margin due to a hot spot can be avoided. In addition, the continuity of the p-type column region (n-type column region) is maintained. As a result, electric field concentration is alleviated step by step toward the outer periphery and the withstand voltage is therefore increased.

Semiconductor device and manufacturing method for the same

A power source circuit is provided having a high frequency transformer 16, a switching control circuit 15 connected with the primary winding of the transformer 16, rectifier circuits 17, 18 and 20 connected with the secondary winding of the transformer 16 for outputting a D.C. voltage to an external circuit, an alarm detection circuit 25, an excess current detection circuit 26, and an excess current detection delay circuit 28. When the alarm detection circuit 25 detects an excess current in supplying power source, the power source supply is suspended by turning off the output of the switching control circuit 15 after the lapse of the preset time. When the excess current flows after the lapse of the initial preset time t.sub.s from turning on the power source, the excess current detection circuit 26 detects it so that the output of the switching control circuit 15 is turned off.

Power source circuit incorporating a protection device therein and a

Growing community of inventors

Tokyo, Japan

Yasuhiro Shirai