Ricoh Company, Ltd.

Kabushiki Kaisha Toshiba

Ricoh Research Institute of General Electronics Co., Ltd.

Yasuhiro Satoh

Jun Watanabe

Naomasa Nakamura

Kazuhiko Yamamoto

Shuichi Suzuki

Kenichiroh Saisho

Makoto Inamoto

Tsukasa Nakai

Sumio Ashida

Keiichiro Yusu

Hiroyuki Fukumizu

Yasuhiro Nojiri

Hiroshi Miura

Eiji Mochizuki

Jun Nakagawa

Noritake Oomachi

Motoya Kishida

Ikue Kawashima

Yasuhiro Higashi

Shoko Suyama

Masayuki Fujishima

Tadao Katsuragawa

Yusuke Ohta

Kazuyuki Yahiro

Yoshiyasu Ito

Yoshiyuki Kiyosawa

Daiki Minegishi

Yuichi Kimura

An image display device includes a lens array, and a scanner to two-dimensionally scan the lens array with a light beam for image display, in which each of lenses of the lens array includes a convex surface with different curvatures in two directions orthogonal to the optical axis of the lens and to each other.

Image display device and vehicle incorporating the same

A screen member irradiated with image display light is provided. The screen member includes an optical element having an optical surface configured to reflect or refract light, wherein an absolute value of a local curvature of the optical surface changes in one direction of a plane perpendicular to an optical axis of the optical element, and becomes a local minimum at at least one position.

Screen member, image display apparatus, and object apparatus

An image display device includes a light source, an imaging element to form an image with a light beam from the light source, and a lens array illuminated with the light beam forming the image for image display, in which lenses are arranged closely to each other. In which in the lens array a curvature radius of a surface of a border of neighboring lenses is set to be smaller than a wavelength of the light beam.

Lens array and image display device incorporating the same

An imaging module includes an imaging chip including a micro-lens guiding incident light and an imaging element in a semiconductor substrate and converting the incident light into an electric signal, and a polarizing glass chip including a polarizing filter glass having a polarizer determining a polarization direction of the incident light arranged on a transparent substrate such that the polarizer faces the micro-lens and a spacer member connected to the polarizing filter glass to adjust a gap between the polarizer and the micro-lens of the imaging chip. In the imaging module, a melt-bonding surface of the spacer member is melt-bonded to the semiconductor substrate such that the polarizer of the polarizing glass chip and the micro-lens of the imaging chip are arranged close to each other via the gap, and the imaging element and the micro-lens of the imaging chip are sealed by the polarizing glass chip.

Imaging module, fabricating method therefor, and imaging device

This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element comprises a thin film including carbon (C). The thin film includes a side surface along a direction of a current flowing in the memory cell. The side surface includes carbon nitride (CN).

Nonvolatile semiconductor memory device

According to one embodiment, a variable resistance layer includes a mixture of a first compound and a second compound. The first compound includes carbon (C) as well as at least one element selected from a group of elements G. The group of elements Gconsists of hydrogen (H), boron (B), nitrogen (N), silicon (Si), and titanium (Ti). The second compound includes at least one compound selected from a group of compounds G. The group of compounds Gconsists of silicon oxide (SiO), silicon oxynitride (SiON), silicon nitride (SiN), carbon nitride (CN), boron nitride (BN), aluminum nitride (AlN), aluminum oxide (AlO), and silicon carbide (SiC). Concentration of the first compound in the variable resistance layer is not less than 30 volume percent, and not more than 70 volume percent.

Nonvolatile semiconductor memory device including a variable resistance layer including carbon

A wavelength conversion device enabling the stable output of high-power harmonic light is disclosed. The wavelength conversion device includes MgO:LiNbO(PPMgLN) having a periodic polarization reversed structure, and the +Z and &#x2212;Z surfaces of the PPMgLN are covered with thin chrome (Cr) film. In the PPMgLN, the incident surface and output surface are disposed on the &#x2212;X side and +X side, respectively, in the longitudinal direction. Because of this structure, even when a high-power laser fundamental wave is incident, the PPMgLN can avoid destruction and damage due to the electric field, thereby enabling the stable output of high-power harmonic.

Wavelength conversion device, laser apparatus, image forming apparatus, and display apparatus

According to one embodiment, in a phase change optical disk which has a substrate and a multi-layered including an interference film, phase change recording film, interface film, and reflecting film, and in which information is reversibly recorded in or erased from the recording film by using light, an element (e.g., Ge or Te) forming the phase change recording film has segregation or a concentration distribution in the thickness direction of the recording film from a portion in contact with the phase change recording film.

Phase change recording medium

In a single-sided, recordable/rewritable phase change optical recording medium having one or more layers, an interface layer adjacent to a phase change optical recording film contains at least Zr (zirconium), O (oxygen), and N (nitrogen), and further contains one or both of Y (yttrium) and Nb (niobium).

Optical recording medium, and information recording/playback apparatus and method using the medium

A sputtering target contains Si and C as its major components and includes a texture in which a Si phase continuously exists in a net shape in gaps among SiC crystal grains. An average diameter of the Si phase is controlled to 1000 nm or less. The sputtering target is sputtered in an oxygen-containing gas, thereby depositing an optical thin film containing Si and O as its major components, and a third element other than the major components, a total amount of the third element being within a range from 10 to 2000 ppm.

Sputtering target, optical thin film and manufacturing method thereof using the sputtering target, and optical recording medium

A photomask designing method and apparatus, a computer readable storing medium, a photomask, a photoresist, a photosensitive resin, a base plate, a microlens, and an optical element. In the method, even though a desired depth of a photoresist pattern and a type of the photoresist are changed, the photomask can be easily designed. In a method of designing a photomask in which intensity of light radiated onto the photoresist is controlled with a fine pattern, that is, a congregation of fine areas respectively having predetermined light transmission factor, the resist sensitivity curve showing resist depth for the exposing amount of the employed photoresist and fine areas data corresponding to plural light transmission factors per predetermined halftone are previously set, and then, the depth of the resist respectively set per each of the fine areas is converted to the light exposing amount by use of the resist sensitivity curve. The converted exposing amount is further converted to the light transmission factor. The light transmission factor is replaced by the fine areas data. In such a way, a concrete fine pattern can be created.

Photomask designing method, a photomask designing apparatus, a computer readable storage medium, a photomask, a photoresist, photosensitive resin, a base plate, a microlens, and an optical element

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Yokohama, Japan

Yasuhiro Satoh