Renesas Technology Corp.

Yasuhiro Obara

Masato Takahashi

Yoshio Fukayama

Tatsuyuki Konagaya

Takeshi Katoh

Masaki Sakashita

Kentaro Yamada

Koichiro Takei

For improving the reliability of a semiconductor device having a stacked structure of a polycrystalline silicon film and a tungsten silicide film, the device is manufactured by forming a polycrystalline silicon film, a tungsten silicide film and an insulating film successively over a gate insulating film disposed over the main surface of a semiconductor substrate, and patterning them to form a gate electrode having a stacked structure consisting of the polycrystalline silicon film and tungsten silicide film. The polycrystalline silicon film has two regions, one region formed by an impurity-doped polycrystalline silicon and the other one formed by non-doped polycrystalline silicon. The tungsten silicide film is deposited so that the resistivity of it upon film formation would exceed 1000 &#x3bc;&#x3a9;cm.

Method of manufacturing a semiconductor device

Growing community of inventors

Hitachinaka, Japan

Yasuhiro Obara