Renesas Technology Corp.

Other

Hitachi Tohbu Semiconductor, Ltd.

Hitachi, Ltd.

Hitachi Microcomputer Engineering, Ltd.

Murata Manufacturing Co., Ltd.

Renesas Electronics Corporation

Hitachi Ulsi Systems Co., Ltd.

Yasuhiro Nunogawa

Tetsuaki Adachi

Hitoshi Akamine

Osamu Kagaya

Kenji Sekine

Kiichi Yamashita

Eiichi Hase

Shizuo Kondo

Sakae Kikuchi

Iwamichi Kohjiro

Masatoshi Morikawa

Masahito Numanami

Tsuyoshi Shibuya

Takayuki Tsutsui

Hiroyuki Nagamori

Hirotaka Ueno

Shinji Yamada

Shun Imai

Hirotaka Mochizuki

Satoshi Arai

Nobuhiko Ishihara

Kogi Sugita

Osamu Miki

Kunio Seki

Makoto Kobayashi

Tomomichi Koizumi

Shuji Tomono

Makoto Goto

Tsuneo Ikeda

Fumito Moriyama

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Semiconductor device

There is provided a high frequency power amplifier circuit capable of enhancing detection accuracy of an output level, necessary for feedback control of the high frequency power amplifier circuit, and capable of executing output power control with higher precision, With the high frequency power amplifier circuit, the detection of the output level, necessary for feedback control of the high frequency power amplifier circuit is executed by use of a current detection method, and in an electronic device comprising a differential amplifier for comparing an output power detection signal with an output level designation signal and for generating a signal for controlling a gain of the high frequency power amplifier circuit according to a potential difference between the two signals, a power source voltage with variation less than that for the power source voltage of the high frequency power amplifier circuit is used as the operational power source voltage of the output power detection circuit. Further, there is provided a capacitor across which an AC component is taken out from the output side of a power amplification transistor in the final amplification stage of the high frequency power amplifier circuit to be thereby impressed to the interior of the output power detection circuit.

High frequency power amplifier circuit and radio communication system

A power source circuit for a high frequency power amplifying circuit, that can be used for a portable telephone of the GSM or WCDMA and a portable telephone capable of performing communications in two or more communication systems such as the GSM and CDMA. The power source circuit is constructed by a first direct current power source circuit such as a series regulator whose power efficiency is not high but which reaches a high level quickly, and a second direct current power source circuit such as a switching regulator, which does not reach the high level quickly but whose power efficiency is high. When the power source voltage has to reach the high level at high speed, both of the series regulator and the switching regulator are simultaneously operated. When the output power source voltage reaches a predetermined level, the operation of the series regulator is stopped.

Power source circuit for high frequency power amplifying circuit and semiconductor integrated circuit for power source and electronics component for power source

A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

High frequency power amplifier module, and wireless communication system

There are provided an electronic component for high frequency power amplification provided with a high-sensitivity output power detection circuit which is immune to the influence of changes in the use environment thereof, free of an output mismatch, small in size, and low in insertion loss and a wireless communication system using the electronic component. There are provided an output detection transistor which receives, at a control terminal, a voltage extracted from the intermediate node of an impedance matching circuit provided between the final-stage power amplification transistor of a high-frequency power amplification circuit and an output terminal thereof via a capacitor element and allows a current proportional to an output power to flow, a bias generation circuit for giving an operating point to the control terminal of the transistor, a current mirror circuit for transferring the current flowing in the output detection transistor, and a current-to-voltage conversion transistor for converting the transferred current to a voltage.

Electronic component for high frequency power amplifier and radio communication system

A directional coupler for detecting an output of a high frequency circuit module includes a main line and a sub-line overlapped with the main line with a dielectric material. The sub-line is set, in width, narrower than the main line and both side edges of the sub-line are allocated at the internal side of both side edges of the main line. Accordingly, the sub-line is surely provided opposed to the main line in the total width area and a signal current flowing into the main line can be detected in higher accuracy. Therefore, a wireless communication system for controlling an output of the high frequency circuit module by including such directional coupler assures stable communication.

Directional coupler, high frequency circuit module and wireless communication system

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

High frequency power amplifier module and wireless communication system

The present invention provides a power supply circuit, which supplies a power supply voltage to a high frequency power amplifier. The power supply circuit comprises a DC&mdash;DC converter, a voltage control transistor, and a control circuit which controls the voltage control transistor. When the power supply circuit is used in a CDMA-system cellular phone, the power supply circuit supplies a power supply voltage generated by the DC&mdash;DC converter to the high frequency power amplifier upon a low output, whereas upon a high output, the power supply circuit turns on the voltage control transistor to directly supply a battery voltage to the high frequency power amplifier. On the other hand, when the power supply circuit is used in a CGS-system cellular phone, the power supply circuit supplies a power supply voltage generated by the DC&mdash;DC converter to the high frequency power amplifier, whereas upon a high output, the voltage control transistor is controlled by the control circuit based on a signal for designating an output level to generate a power supply voltage supplied to the high frequency power amplifier.

Power supply system for a high frequency power amplifier

A high frequency power amplifying apparatus is provided with an amplifying section with a plurality of amplifying stages connected in cascade. A power control signal is supplied to the amplifying section through a control terminal so as to control the output of the high frequency power amplifying apparatus. Each of the amplifying stages has a gain smaller than that of a preceding stage. Gain control signals generated from the power control signal are supplied to the respective amplifying stages. Dividing resistors are connected in series with one another between the control terminal and a reference potential so as to divide the voltage of the power control signal to thereby generate a plurality of different gain control signals. Different ones of the gain control signals are supplied to the respective amplifying stages, an absolute value of a voltage of the gain control signal applied to each stage is smaller than that applied to an earlier preceding stage.

High frequency power amplifying apparatus having amplifying stages with gain control signals of lower amplitudes applied to earlier preceding stages

High frequency power amplifier module, and wireless communications system

Growing community of inventors

Takasaki, Japan

Yasuhiro Nunogawa