Murata Manufacturing Co., Ltd.

Yasuhiro Negoro

Michio Kadota

Hideya Horiuchi

Junya Ago

Hiroshi Kawai

Yasutaka Fujii

Katsuhiko Tanaka

Tetsuzo Hara

Tsutomu Ishige

Yoshinori Miura

Yuji Iyoda

A method for forming a p-type semiconductor film comprises the steps of: providing on a substrate a group II-VI compound semiconductor film which is doped with a p-type impurity and comprises either Mg Zn O (0&lE;X&lE;1) or Cd Zn O (0&lE;X&lE;1) and activating the p-type impurity by annealing the doped semiconductor film.

Method for forming p-type semiconductor film and light emitting device using the same

An evacuated package with highly reliable vacuum-sealing and a method for producing an evacuated package with the evacuatable package. A lid portion is joined onto a substrate with an element accommodated in an evacuated space formed by the substrate and the lid portion. A connecting hole in the lid portion extends from the space to the top face of the lid portion. A metal film is formed around the complete peripheral region of the opening of the connecting hole, and a thermo-melting material is joined to the metal film to close the opening of the connecting hole so as to seal the element in the evacuated space. Before closing the opening of the connecting hole with the thermo-melting material, the space is evacuated, and simultaneously, the thermo-melting material is melted by heat and left until completely degassed in a vacuum. The degassed thermo-melting material is then pressed and joined to the metal film around the periphery of the opening of the connecting hole to close the opening with the thermo-melting material and vacuum-seal the space.

Evacuated package and a method of producing the same

An angular velocity sensor includes: a board in the form of a flat plate; a rotational vibrator extended to the right and left from a central axis vertical to the board at the center of rotational vibration over the board and supported at the location of the central axis by rotational supporting beams so as to be rotationally vibrated; a first vibrator located on the left side of the rotational vibrator and supported by first supporting beams; a second vibrator located on the right side of the rotational vibrator and supported by second supporting beams; a rotational vibration generator for vibrating the second vibrator backward and forward when the first vibrator is vibrated forward and backward by giving rotational vibration to the rotational vibrator; a first displacement detector for detecting displacement of the first vibrator vibrated to the right and left when an angular velocity is applied around the central axis of the rotational vibrator in the state that rotational vibration is given to the rotational vibrator by the rotational vibration generator; and a second displacement detector for detecting displacement of the second vibrator vibrated to the right and left when an angular velocity is applied around the central axis of the rotational vibrator in the state that rotational vibration is given to the rotational vibrator by the rotational vibration generator.

Angular velocity sensor

An edge reflection type surface acoustic wave device includes a surface acoustic wave substrate made of a piezoelectric single crystal and having first and second opposite edges, and at least one interdigital transducer disposed on the surface acoustic wave substrate. The surface acoustic wave device is constructed such that a Shear Horizontal type surface acoustic wave is reflected between the first and second opposite edges. The surface acoustic wave substrate is made of an ion-implanted piezoelectric single crystal substrate.

Edge reflection type surface acoustic wave device

A reference electrode is fixed on the bottom of a concave portion of a substrate. A movable electrode is provided so that its electrode face faces that of the reference electrode at an interval to form a capacitor by the movable and reference electrodes. A driving electrode for driving the movable electrode is fixed on the substrate at an interval from the movable electrode. The distance 2L between the driving and movable electrodes is twice the distance L between the movable and reference electrodes. An external bias voltage is applied between the driving and movable electrodes to deflect the movable electrode. This doubles the range of the displacement of the movable electrode, thereby increasing the capacity change rate of the variable capacitor.

Variable capacitor

An acceleration detection device is provided which is capable of detecting accelerations in two or more directions. The base end of a beam is fixed to a support section on a board. A weight is provided in the front end of the beam which is formed so as to extend horizontally along the board surface with a gap with it and the surface of the board. The position of the center of gravity G of the weight is set at a position spaced perpendicularly apart from the center axis of the beam in order that the inertial moment acts when an acceleration along the length (in the X direction) of the beam is applied. The front end surface of the weight is formed into an upright surface of a movable electrode, and a fixed electrode is formed at a position facing the movable electrode with a gap therebetween. When an acceleration in the X or Y direction is applied, the beam is flexed upwardly or downwardly in proportion to the magnitude of the acceleration, causing the weight to be inclined upwardly or downwardly while being displaced upwardly or downwardly. Thus, the electrostatic capacity between the movable electrode and the fixed electrode increases or decreases. The magnitude of the acceleration can be detected on the basis of the amount of such change of the electrostatic capacity.

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Nagaokakyo, Japan

Yasuhiro Negoro