Fujitsu Corporation

Sharp Kabushiki Kaisha Corporation

Fujitsu Display Technologies Corporation

Yasuhiro Nasu

Teruhiko Ichimura

Tomotaka Matsumoto

Hidefumi Yoshida

Yoshinori Tanaka

Kenji Okamoto

Mitsuhiro Murata

Tetsuya Fujikawa

Kazuhiro Watanabe

Yosuke Iwata

Hideaki Takizawa

Shiro Hirota

Teiji Majima

Seii Sato

Kazuo Nonaka

Akira Sakai

Tsuyoshi Kamada

Koichi Miyachi

Tsuyoshi Maeda

Masahiro Hasegawa

Noriko Watanabe

Shinsuke Saida

Yuichiro Yamada

Yasumori Fukushima

Satoru Kawai

Yoji Nagase

Yoji Yoshimura

Tsuyoshi Kamata

Toshirou Kodama

Shintaro Yanagisawa

Nobuyoshi Takagi

Jun-ichi Watanabe

Tetsuro Endo

Shinichi Soeda

An electronic device includes: a flexible substrate, a device portion supported on the flexible substrate, and a driver circuit portion; and a flexible tube having a water vapor transmission rate of less than 10g/(m&#xb7;24 h) and an oxygen transmission rate of less than 10ml/(m&#xb7;24 h&#xb7;MPa), wherein: the flexible tube forms a first seal structure and a second seal structure at both ends thereof, and has a sealed space therein; a part of the flexible substrate and the device portion are inside the sealed space; and a rest of the flexible substrate, other than the part, is outside the sealed space.

Electronic device

A liquid crystal display device is provided that has favorable display characteristics in a display mode using a vertical electric field and a horizontal electric field. This liquid crystal display device includes a first substrate and a second substrate arranged facing each other, and a liquid crystal layer sandwiched between the first substrate and the second substrate. The liquid crystal layer has liquid crystal molecules having a negative dielectric anisotropy, and the first substrate has a plate-shaped first common electrode and a pixel electrode formed in a separate layer from the first common electrode with an insulating film therebetween. The pixel electrode has a comb-shaped structure, and the second substrate has a second common electrode with a liquid crystal orientation structure that is linear in a plan view.

Liquid crystal display device

This liquid crystal display device () includes: a vertical alignment liquid crystal layer (); first and second substrates (); first and second electrodes () arranged on the first and second substrates to face the liquid crystal layer; and two photo-alignment films (). Each pixel region includes first and second liquid crystal domains, of which the reference alignment directions defined by the two photo-alignment films are a first direction and a second direction different from the first direction, respectively. The first electrode has a slit cut region (R), through which a slit () has been cut to run substantially parallel to the reference alignment direction, in a part of a region allocated to each of the first and second liquid crystal domains. The width (W) of the slit is set so that when the highest grayscale voltage is applied to the first electrode, an effective applied voltage decreases by at least 0.5 V and the alignment direction of liquid crystal molecules () shifts with respect to the reference alignment direction by less than 45 degrees.

Liquid crystal display

The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time. Electrostatic protection element sectionsandare provided with a first TFThaving a source electrode (S) and a drain electrode (D) where the source electrode (S) is connected to external output electrodesandand the drain electrode (D) is connected to common wiringsand, a second TFThaving a conductor, a source electrode (S), a drain electrode (D) and a gate electrode (G) where the conductoris connected to the gate electrode (G) of the first TFT, the source electrode (S) is connected to the external output electrodesand, the drain electrode (D) is connected to the conductorand the gate electrode (G) is electrically floated, and a third TFThaving a source electrode (S), a drain electrode (D) and a gate electrode (G) where the source electrode (S) is connected to the common wiringsand, the drain electrode (D) is connected to the conductorand the gate electrode is electrically floated.

Liquid crystal display comprising an electrostatic protection element formed between adjacent bus lines

A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.

Method for fabricating thin film transistor matrix device

A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal .portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

Method of manufacturing thin film transistors in a liquid crystal

A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.

Thin film transistor matrix device

A method of manufacturing an active matrix display device, in which particular emphases are laid on the forming step of an insulation layer by the ALE method and the precedent and subsequent steps thereof, thereby insulation layer being anyone among gate insulation layer, inter-busline insulation layer, protection layer and auxiliary capacitor insulation layer comprised in the display device. The method of forming the insulation layer comprises the predetermined number of repeated cycles of the steps of subjecting a substrate to the vapor of a metal inorganic/organic compound, which can react with H.sub.2 O and/or O.sub.2 and form the metal oxide, under molecular flow condition for duration of depositing almost a single atomic layer, and next subjecting the surface of thus formed metal inorganic/organic compound layer to the H.sub.2 O vapor and/or O.sub.2 gas under molecular flow condition for duration of replacing the metal inorganic/organic compound layer to the metal oxide layer. The subsequent steps after forming of the insulation layer include deposition steps of silicon nitride and amorphous silicon layers using the same plasma CVD apparatus. The molecular flow condition is obtained by maintaining the pressure in a reaction chamber within a range between 1 and several tens of milli-Torr.

Method of manufacturing active matrix display device using insulation

A thin film transistor including a glass substrate and a gate electrode which is formed on the glass substrate. Source and drain electrodes are also provided. An insulating film covers at least the gate electrode and an amorphous semiconductor layer is formed on the insulating film. The semicondcutor layer includes a first portion having the source electrode formed thereon, a second portion having the drain electrode formed thereon, and a third portion formed between the first and second portions and located above the gate electrode, having a thin thickness which allows photolithographic light to permeate therethrough.

Process for producing a thin film field-effect transistor

Growing community of inventors

Kawasaki, Japan

Yasuhiro Nasu