Canon Kabushiki Kaisha

Yasuhiro Nagatomo

Shoichi Kawashima

Takeshi Kawashima

Katsuyuki Hoshino

Takeshi Uchida

Mamoru Uchida

Yuichiro Hori

Mitsuhiro Ikuta

Tatsuro Uchida

Nobutaka Ukigaya

Mitsuro Sugita

Koichiro Nakanishi

Kohei Okamoto

Kobei Okamoto

Provided is a back illuminated photoelectric conversion device including a semiconductor substrate that has a first area that is not light-shielded by a light shielding layer, a second area that is light-shielded by the light shielding layer and in which a second pixel is arranged, and a third area that is arranged between the first area and the second area in a plan view. An attenuating member that attenuates a guided light entering the first area and propagating to the second area with the semiconductor substrate as a waveguide is arranged in the third area.

Photoelectric conversion device having an attenuating member that attenuates a guided light

An organic light emitting device including a first electrode arranged on a first insulation layer, a second insulation layer that covers an end of the first electrode, an organic layer arranged on the first electrode and the second insulation layer and including a light emission layer, and a second electrode arranged on the organic layer, wherein in a cross section including the first insulation layer, the first electrode, and the second insulation layer, the second insulation layer has an eaves shape.

Organic light emitting device, image capturing device, and method for producing organic light emitting device

The present invention provides a surface emitting laser the wavelength-tunable band of which is wide. The wavelength-tunable surface emitting laser includes a first reflector (), an active layer () disposed on the first reflector (), a beam portion () disposed over the active layer () with an air gap therebetween, and a second reflector () disposed on the beam portion (). The second reflector () has a distributed Bragg reflector consisting of a stack of dielectric layers. The beam portion () has a distributed Bragg reflector consisting of a stack of conductive semiconductor layers.

Surface emitting laser, information obtaining apparatus, and imaging apparatus

A surface emitting laser having a wide wavelength tunable band is provided. A surface emitting laser includes a first reflecting mirror (); a second reflecting mirror (); and an active layer () arranged between the first reflecting mirror () and the second reflecting mirror (), a gap being formed between the second reflecting mirror () and the active layer (), an oscillation wavelength being tunable. The second reflecting mirror () includes a beam () comprising a single-crystal semiconductor, and a dielectric multilayer film () supported by the beam (), and the dielectric multilayer film () is arranged in an opening () formed in the beam ().

Surface emitting laser, information acquiring apparatus, imaging apparatus, laser array, and method of manufacturing surface emitting laser

The method of producing a GaN-based microstructure includes a step of preparing a semiconductor structure provided with a trench formed in a main surface of the nitride semiconductor and a heat-treating mask covering a main surface of the nitride semiconductor excluding the trench, a first heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to form a crystallographic face of the nitride semiconductor on at least a part of a sidewall of the trench, a step of removing the heat-treating mask after the first heat-treatment step and a second heat-treatment step of heat-treating the semiconductor structure under an atmosphere containing nitrogen element to close an upper portion of the trench on the sidewall of which the crystallographic face is formed with a nitride semiconductor.

Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method

In order to provide a wavelength tunable surface emitting laser capable of improving a wavelength tuning efficiency, provided is a surface emitting laser, including: a first reflector; a semiconductor cavity including an active layer; and a second reflector, the first reflector, the semiconductor cavity, and the second reflector being formed in the stated order, a gap portion being formed between the first reflector and a semiconductor layer, a cavity length being tunable, in which the surface emitting laser has a high reflectivity structure formed between the gap portion and the semiconductor cavity, and an expression of '(&#x3bb;/2)&#xd7;m+&#x3bb;/8&#x3c;L&#x3c;(&#x3bb;/2)&#xd7;m+3&#x3bb;/8' is satisfied, where L is an optical thickness of the semiconductor cavity, m is an integer of 1 or larger, and &#x3bb; is a center wavelength of laser oscillation.

Surface emitting laser and optical coherence tomography apparatus

A surface emitting laser operable to change a wavelength of emitted light includes a first reflecting mirror, a second reflecting mirror, wherein a cavity is formed between the first reflecting mirror and the second reflecting mirror along the optical axis of the surface emitting laser, an active layer formed within the cavity, a region formed within the cavity, and a movable part situated within the region, the movable part having a refractive index different from a refractive index of the region. The wavelength of emitted light is changeable by changing the position of the movable part along the direction of the optical axis in the region.

Surface emitting laser and optical coherence tomography measuring apparatus using the surface emitting laser

A surface emitting laser includes a lower reflector, an active layer, and an upper reflector that are arranged in that order; an air gap provided between the active layer and the upper reflector; and a slab provided on an optical path of the air gap and having a refractive index that is higher than a refractive index of the air gap. A position of at least one of the upper reflector and the lower reflector in an optical axis direction is changed to change a wavelength of emitted light. In the case where the position of the upper reflector is changed, a center of the slab in the optical axis direction is located between any antinode of a standing wave formed in the air gap and a node of the standing wave that is adjacent to and on an upper-reflector side of the antinode.

Surface emitting laser and optical coherence tomography apparatus including the same

A process for forming a microstructure of a nitride semiconductor including (1) preparing a semiconductor structure which has a second semiconductor layer formed of a group III nitride semiconductor containing at least Al formed on a principal plane of a first semiconductor layer formed of a group III nitride semiconductor containing no Al, and which has a hole that penetrates through the second semiconductor layer and is formed in the first semiconductor layer; (2) subjecting the semiconductor structure to heat treatment under a gas atmosphere including a nitrogen element after step (1) to form a crystal plane of the group III nitride semiconductor containing no Al, on at least a part of a side wall of the hole; and (3) forming a third semiconductor layer formed of a group III nitride semiconductor on the second semiconductor layer after step (2) to cover the upper part of the hole.

Process for forming microstructure of nitride semiconductor, surface emitting laser using two-dimensional photonic crystal and production process thereof

A photonic crystal surface emitting laser array reduces the occurrence of reflected feedback light while also reducing input of leaking light. The photonic crystal surface emitting laser array includes a plurality of first photonic crystal regions that cause laser oscillation, a second photonic crystal region that causes light diffraction to occur in an out-of-plane direction, and a light absorber that is provided above the second photonic crystal region and that absorbs light having a wavelength &#x3bb;. A radiation coefficient of each first photonic crystal region is smaller than a radiation coefficient of the second photonic crystal region.

Distributed feedback surface emitting laser

Provided is a two-dimensional photonic crystal surface emitting laser that enables easy laser oscillation with two-dimensionally symmetric intensity distribution, using a photonic crystal of a lattice structure having different lengths of primitive translation vectors in plane, realized in a two-dimensional photonic crystal surface emitting laser including an active layer, and a two-dimensional photonic crystal having a two-dimensionally periodic refractive index profile disposed in a vicinity of the active layer. The two-dimensional photonic crystal has a lattice structure where two primitive translation vectors in plane have different lengths, a shape of a member forming lattice points included in a unit cell of the lattice structure has anisotropy with respect to directions of the two primitive translation vectors, and the anisotropy of the shape of the member permits a difference of a coupling coefficient to be smaller than a case where the shape of the member is isotropic.

Two-dimensional photonic crystal surface emitting laser

There are provided a process for producing a semiconductor device and a semiconductor device which allow conductivity distribution to be formed without making refractive index distributed even in a material system of a semiconductor difficult to be subjected to ion implantation. The process for producing a semiconductor device includes the steps of forming a semiconductor layer containing a dopant; forming a concave and convex structure on the semiconductor layer by partially removing the semiconductor layer; and forming a conductivity distribution reflecting the concave and convex structure in the semiconductor layer by performing heat treatment on the semiconductor layer in which the concave and convex structure has been formed at a temperature at which a material forming the semiconductor layer causes mass transport and filling up a hole of a concave portion of the concave and convex structure with the material forming the semiconductor layer.

Process for producing semiconductor device and semiconductor device

A nitride semiconductor surface-emitting laser includes a two-dimensional photonic crystal layer having a resonant mode in an in-plane direction. The surface-emitting laser includes an active layer, the two-dimensional photonic crystal layer, a semiconductor layer, and an electrode in this order. The two-dimensional photonic crystal layer contains p-type conductive InGaN (0&#x2266;x&#x2266;1) as a high-refractive-index medium. The semiconductor layer contains p-type conductive InGaN (0&#x2266;y&#x2266;1). The thickness tof the two-dimensional photonic crystal layer satisfies the relation of t&#x2267;(&#x3bb;/n), wherein &#x3bb; denotes the lasing wavelength, and ndenotes the effective refractive index of the resonant mode.

Nitride semiconductor laser

A laser structure is provided in which an influence caused by a concave-convex structure on laser characteristics is reduced when the Epitaxial Lateral Overgrowth (ELO) technique is applied to a photonic-crystal surface emitting laser. A height of the mask structure is set such that a reflection peak wavelength of 0-th order diffracted light and a reflection peak wavelength of first-order diffracted light differ from each other for light that enters a concave-convex periodic structure, which is constituted by a first layer and a mask structure, from a photonic crystal. Further, reflection intensity of the 0-th order diffracted light from the concave-convex periodic structure is larger than reflection intensity of the first-order diffracted light from the concave-convex periodic structure at an oscillation wavelength &#x3bb;.

Growing community of inventors

Kawasaki, Japan

Yasuhiro Nagatomo