Ulvac, Inc.

Yasuhiro Morikawa

Koukou Suu

Toshio Hayashi

Toshiyuki Nakamura

Taichi Suzuki

Kenta Doi

Toshiyuki Sakuishi

Takahide Murayama

Muneyuki Sato

Minoru Suzuki

A plasma processing device includes an inductively coupled plasma antenna including an input end and an output end, a series circuit including an additional inductor and a variable capacitor connected in series, and a controller that varies a capacitance of the variable capacitor. The input terminal is connected via an antenna matching device to an antenna power supply. The output terminal is connected to the additional inductor. The additional inductor is connected via the variable capacitor to ground.

Plasma processing device

A method of the invention is a method of processing a wiring substrate that includes a configuration in which conductors locally disposed on a substrate are coated with resin having inorganic members that form a filler and are dispersed in an organic member, the method including: removing the organic member from a surface layer side of the resin by use of an ashing method; and removing, by use of a wet cleaning method, the inorganic members remaining the surface layer side of the resin from which the organic member is removed.

Method of processing wiring substrate

A plasma processing device includes: a chamber; a flat-plate-shaped first electrode; a first high frequency power supply; a helical second electrode disposed outside the chamber and disposed to face the first electrode with a quartz plate forming an upper lid of the chamber therebetween; and a gas introducing unit, in which a second high frequency power supply and a third high frequency power supply are configured to be electrically connected to the second electrode, the second high frequency power supply being configured to apply an AC voltage of a second frequency to the second electrode, the third high frequency power supply being configured to apply an AC voltage of a third frequency to the second electrode, and the third frequency being higher than the second frequency; and two types of AC voltages are configured to be simultaneously applied.

There is provided an etching method which can form trenches or via holes having desired aspect ratios and shapes in a to-be-processed object made of silicon. The etching method includes: a hydrogen halide-containing gas-based etching step of etching a silicon substrate by introducing a hydrogen halide-containing gas into a vacuum chamber; a fluorine-containing gas-based etching step of etching the silicon substrate by introducing a fluorine-containing gas into the vacuum chamber; a protective film formation step forming a protective film on the silicon substrate by sputtering a solid material; and a protective film removal step of removing part of the protective film by applying radio frequency bias power to a substrate electrode. The fluorine-containing gas-based etching step, the protective film formation step, and the protective film removal step are repeatedly performed in this order.

Etching method

An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-&#xe0;-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence.

Etching method and system

An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-&#xe0;-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode. An etching method according to the invention uses a material arranged at the side of the floating electrode opposite to the substrate electrode to form an anti-etching film as target and only rare gas as main gas and is adapted to repeat a step of forming a film on the substrate by sputtering by applying high frequency power to the floating electrode and a step of subsequently etching the substrate by suspending the application of high frequency power to the floating electrode and introducing etching gas into the vacuum chamber in a predetermined sequence (FIG.).

Growing community of inventors

Susono, Japan

Yasuhiro Morikawa