Hitachi, Ltd.

Hitachi Service Engineering Co., Ltd.

Service Engineering Co. Ltd.

Yasuhiro Mochizuki

Hiroaki Hachino

Yutaka Misawa

Naohiro Momma

Takashi Aoyama

Takuya Fukuda

Shigeru Takahashi

Takuzo Ogawa

Tadasi Sonobe

Susumu Murakami

Kazuo Suzuki

Yoko Wakui

Noboru Suzuki

Katsumi Kondo

Yoshiro Mikami

Takeshi Yokota

Takeshi Tanaka

Kazuhiro Ogawa

Hajime Murakami

Hiroki Kaneko

Hidekatsu Onose

Michio Ohue

Yasumichi Yasuda

Satoshi Ichimura

Eiji Setoyama

Yoshiteru Shimizu

Satoshi Takemori

Katsuhisa Usami

Satoshi Matsuyoshi

Yuji Takayanagi

Yukimasa Satou

Yohsuke Inoue

Kouji Ishiguro

Hirofumi Seki

Sadao Okano

Sensuke Okada

Kiyoshi Chiba

Kiyoshi Thukuda

Saburoo Ogawa

Kiyosi Chiba

For a display device having a solar cell and a power buffer for keeping stored electric power, a display system which has a low-power drive mode, self-contained power and no need for recharging or power wiring is provided. The display system includes a solar cell using a thin-film semiconductor, a power storage element for temporarily storing the produced power, a driving circuit, a matrix display unit, a display rewrite instruction unit for inputting screen rewrite and a control circuit and starts rewriting a display when power sufficient to rewrite an image screen is stored in the solar cell. The display device having remarkable portability and no limited battery life, which controls a display mode depending on the power produced by the solar cell, can display even when power generation is low and allows self-contained power even if the storage element has a small capacity, can be obtained.

Low-power driven display device

Dielectric bodies are arranged in waveguide portions for passing microwave radiation and for holding a plasma generating chamber 25 at a vacuum. The dielectric bodies are arranged to intersect at least an electron cyclotron resonance area of the waveguide portions. A tip end portion of the dielectric bodies at a side of the plasma generating chamber are positioned toward at a side of the plasma generating chamber from an intermediate portion in an axial direction length of a first permanent magnet which is arranged by enclosing an outer periphery of the waveguide portions, and a tip end portion of the dielectric bodies at a side of the plasma generating chamber is substantially consistent with an inner face of the plasma generating chamber.

Plasma processing apparatus with a dielectric body in the waveguide

A novel semiconductor device with a pair of main surfaces is disclosed, in which at least three semiconductor layers are formed adjacently to each other. The device comprises a main thyristor portion for supplying a main current, an auxiliary thyristor portion, a pilot thyristor portion and a breakover portion. The breakover portion, in turn, includes a semiconductor layer having a high impurities concentration formed on one of the main surfaces, and a plurality of semiconductor layers having a high impurities concentration of opposite conduction type formed adjacently to the semiconductor layer and in spaced relationship from each other.

Overvoltage self-protection semiconductor device, method of fabrication

A gate turn-off thyristor having a p-emitter layer in the anode side, an n-base layer, a p-base layer and an n-emitter layer in the cathode side. The n-base layer is composed of a first layer portion adjacent to the p-emitter layer, a second layer portion adjacent to the p-base layer and having a lower impurity concentration than the first layer portion, and is constituted by a structure which alters a travelling path of positive holes injected from the p-emitter layer.

Gate turn-off thyristor and power convertor using the same

A plasma treatment apparatus for forming a thin film on a substrate in a vacuum vessel includes a magnetic field generator which can be positioned inside or outside the vacuum vessel, and a microwave source. The magnetic field strength is controllable such that an electron cyclotron resonance (ECR) area is defined near the substrate. The magnetic field generator can be arranged so that plasma and reactive gas introduction ports are on the microwave introduction side of the ECR area and the substrate is on the opposite side of the ECR area. Alternatively, a gas introduction port can be positioned such that reactive gas is introduced into the ECR area or onto the substrate.

Apparatus for plasma treatment using electron cyclotron resonance

TFTs with an inverted stagger structure are fabricated according to the invention as follows; a glass substrate after depositing amorphous silicon (a-Si) thereupon is transferred to a laser annealing chamber which is kept in non-oxidation ambient and provided with a sample holder and a substrate heating mechanism. The substrate is fixed on the sample holder, then subjected to laser annealing while being heated from the glass substrate side, thereby growing polycrystalline silicon having substantially improved crystallinity, on which a-Si is further deposited. According to this process of the invention, it is capable of forming TFTs having a higher mobility and a smaller leakage current in the periphery of the substrate, with addition of almost no changes to the process and device structures of conventional TFTs which constitute pixels, and even more the peripheral drive circuitry is capable of being integrated in the display substrate.

Thin film semiconductor device having inverted stagger structure, and

A display device such as a liquid crystal display device is provided which comprises a single substrate, a plurality of thin film semiconductor elements provided on the substrate, a plurality of display elements whose pixel display is controlled by the semiconductor elements, and electrodes for driving the display elements. The substrate includes a display zone having the thin film semiconductor elements arranged in the display elements as well as a non-display zone. The non-display zone has a display scan drive circuit area and a display signal drive circuit area. The thin film semiconductor elements are formed in the both zones. A distance between the display signal drive circuit area and the semiconductor elements of the display zone on the substrate is physically arranged so as be larger than a distance between the display scan drive circuit area and the semiconductor elements of the display zone. In the display device, the multiplicity of semiconductor elements are formed on a glass substrate having one side of several or more inches so that minimum processing dimensions of the semiconductor elements in the display zone are smaller than those in the non-display zone.

Display device, manufacturing method thereof and display panel

A dielectric isolated substrate wherein a connecting polycrystalline silicon layer has smooth and flat surface on which a single crystal support is bonded and has a densified crystal structure, or is obtained by further heat treatment at 800.degree. C. or higher after deposition, or has no orientation as to growth direction of polycrystalline silicon, or a buffering layer is formed between a polycrystalline silicon layer and a single crystal support, is excellent in bonding between the single crystal support and the polycrystalline silicon layer by preventing voids at the bonded surface, while enhancing reliability.

Dielectric isolated substrate and process for producing the same

A plasma operation apparatus utilizes plasma generated by a microwave cooperative with a magnetic field as to perform a surface operation on a specimen such as semiconductor substrates, such as, for example, thin film deposition, etching, sputtering and plasma oxidation. The apparatus particularly takes advantage of electron cyclotron resonance and is suitable for performing highly efficient and high-quality plasma operations.

Plasma operation apparatus

A method of manufacturing a semiconductor device of the type wherein aluminum layers are selectively deposited on a major surface of a silicon semiconductor substrate and thereafter aluminum is selectively diffused into the silicon semiconductor substrate by means of heat treatment. SiO.sub.2 mask is selectively formed on at least one major surface of the silicon semiconductor substrate, then aluminum is deposited onto the major surface being close to but separated from the SiO.sub.2 mask, subsequently the silicon semiconductor substrate is subjected to a heat treatment to selectively diffuse the aluminum into the silicon semiconductor substrate. The SiO.sub.2 mask which is formed before the heat treatment prevents impurity atoms from autodoping through the SiO.sub.2 mask. No cracking occurs in the SiO.sub.2 mask because the aluminum diffusion source is apart from the periphery of the SiO.sub.2 mask.

Method of manufacturing semiconductor device having aluminum diffused

A method of diffusing selectively aluminium into a single crystal silicon semiconductor substrate for fabricating a semiconductor device comprises the steps of forming a diffusion source layer of aluminium having a predetermined thickness on at least one of the major surfaces of the substrate in a predetermined pattern, forming an oxide film of a predetermined thickness through oxidation over the surface of the diffusion source layer and the exposed surface of the substrate, and heating the substrate inclusive of the exposed surface thereof and the diffusion source layer thereby to diffuse aluminium into the substrate. The thickness of the oxide film is so selected as to suppress vaporization of the aluminium and at the same time to be used as a diffusion mask without giving rise to crystallization into a cristobalite structure. The method allows the pattern of boundary between the diffused regions and non-diffused regions as well as concentration profile of the diffused region to be controlled in a desired manner with a high accuracy.

Method of selectively diffusing aluminium into a silicon semiconductor

A method of fabricating a semiconductor device of the type wherein aluminium layers are selectively deposited on the major surface of a silicon semiconductor substrate and thereafter aluminium is selectively diffused into the silicon semiconductor substrate by means of heat treatment in an atmosphere including an oxygen gas. Recesses are selectively formed in at least one major surface of the silicon semiconductor substrate, aluminium is deposited onto the recesses, and the silicon semiconductor substrate is then subjected to a heat treatment to selectively diffuse the aluminium into the silicon semiconductor substrate. Layers of oxide of silicon-aluminium alloy formed on the major surface subjected to the aluminium diffusion will not cause any damage of a photo-mask and at the same time accuracy in positioning the photo-mask may be improved. A failure to mount a semiconductor element onto a heat sink may also be prevented.

Method of fabricating a semiconductor device

A method of fabricating a semiconductor device through selective diffusion of aluminum vapor into a silicon substrate by heating a sealed tube in which the silicon substrate and an aluminum source are disposed. The diffusion is effected with a low concentration of aluminum smaller than about 10.sup.17 atoms/cm.sup.3, thereby making it possible to use a silicon oxide film as a diffusion mask for the selective diffusion of aluminum at predetermined region of the silicon substrate.

Vapor phase diffusion of aluminum with or without boron

An aluminum diffusion source layer is formed by vacuum evaporation on a major surface of a silicon substrate. The silicon substrate is heated to form an aluminum-silicon alloy layer, an aluminum doped silicon recrystallization layer and an aluminum diffusion layer. Thereafter, the aluminum-silicon alloy layer is removed from the major surface of the silicon substrate. Drive-in diffusion is performed so as to diffuse, aluminum included in the silicon recrystallization layer and the aluminum diffusion layer, into the silicon substrate. As a result, the aluminum diffusion concentration of 10.sup.16 -10.sup.19 atoms/cm.sup.3 can be obtained.

Method of diffusing aluminum into silicon substrate for manufacturing

Growing community of inventors

Katsuta, Japan

Yasuhiro Mochizuki