Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

Yasuhiro Megawa

Kazuhiro Yuasa

Kazuhiro Kimura

Akito Hirano

Takahiro Miyakura

Kiyohiko Maeda

Takafumi Sasaki

Atsushi Moriya

Masato Terasaki

Masayoshi Minami

Takashi Nakagawa

Yasunobu Koshi

Masanao Fukuda

There is provided a technique that includes: (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature; (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.

Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

There is provided a technique that includes: (a) forming a silicon germanium film in an amorphous state so as to embed an inside of a recess formed on a surface of a substrate, by supplying a first silicon-containing gas and a germanium-containing gas to the substrate at a first temperature; (b) raising a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature; and (c) forming a silicon film on the silicon germanium film by supplying a second silicon-containing gas to the substrate at the second temperature, wherein in (c), the silicon germanium film as a base of the silicon film is crystallized while the silicon film is formed.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

An oxygen-containing gas and a hydrogen-containing gas are supplied into a pre-reaction chamber heated to a second temperature and having the pressure set to less than an atmospheric pressure, and a reaction is induced between both gases in the pre-reaction chamber to generate reactive species, and the reactive species are supplied into the process chamber and exhausted therefrom, in which a substrate heated to the first temperature is housed and the pressure is set to less than the atmospheric pressure, and processing is applied to the substrate by the reactive species, with the second temperature set to be not less than the first temperature at this time.

Substrate processing apparatus, method of processing substrate and method of manufacturing semiconductor device

Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate.

Device for processing a substrate, method of processing a substrate and method of manufacturing semiconductor device

An object of this invention is to make it possible to suppress early-stage oxidation of a substrate surface prior to oxidation processing, and to remove a natural oxidation film. For this reason, a method is provided comprising the steps of loading a substrate into a processing chamber, supplying a hydrogen-containing gas and an oxygen-containing gas into the processing chamber, and subjecting a surface of the substrate to oxidation processing, and unloading the substrate subjected to oxidation processing from the processing chamber. In the oxidation processing step, the hydrogen-containing gas is introduced in advance into the processing chamber, with the pressure inside the processing chamber set at a pressure that is less than atmospheric pressure, and the oxygen-containing gas is then introduced in the state in which the introduction of the hydrogen-containing gas is continued.

Manufacturing method of a semiconductor device, and substrate processing apparatus

Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing of a substrate. The substrate processing apparatus has: a process chamber for processing a substrate; a reactive gas-supplying module for supplying a reactive gas into the process chamber; a reactive gas-supplying line for supplying the reactive gas from the reactive gas-supplying module into the process chamber; an exhaust line for exhausting an inside of the process chamber; a pump provided in the exhaust line for vacuumizing the inside of the process chamber; a pressure-adjusting valve provided in the exhaust line for adjusting a pressure in the process chamber; a first pressure-measuring instrument for measuring an inside pressure of the process chamber; a second pressure-measuring instrument for measuring a differential pressure between the inside pressure of the process chamber and an outside pressure thereof; and a controller which controls the pressure-adjusting valve based on a value of the inside pressure of the process chamber measured by the first pressure-measuring instrument so as to keep the inside pressure of the process chamber constant, and controls the reactive gas-supplying module based on a value of the differential pressure measured by the second pressure-measuring instrument so as to allow supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being smaller than the outside pressure thereof, and so as to preclude supply of the reactive gas into the process chamber in a case of the inside pressure of the process chamber being larger than the outside pressure thereof when processing the substrate.

Growing community of inventors

Toyama, Japan

Yasuhiro Megawa