Hosiden Electronics Co., Ltd.

Tpo Hong Kong Holding Limited

Yasuhiro Matsushita

Yasuhiro Ukai

Shigeo Aoki

Yoshihiko Hamawaki

Yoshihisa Hatta

Yashihisa Hatta

An object of the invention is to accurately and easily manufacture a color filter. A method of manufacturing a color filter comprises: a first step of forming a first rib () forming a light shield layer and a second rib () having a smaller height than the first rib () in pattern on a base layer () by means of a photolithography method; a second step of forming a step-forming layer () by dripping an optical transmissive material into an area defined by the first and second ribs () by means of ink-jet technique; and a third step of forming a coloring layer by dripping an optical coloring material () into an area defined by the first rib () by means of ink-jet technique after forming the step-forming layer ().

Color filter with optical transmissive step-forming layer and its manufacturing method, and a liquid crystal display device using the color filter

A color filter being precisely and easily manufactured while solving an alignment problem is provided. Further, a method for manufacturing a color filter structure formed in a display panel that has front and rear substrates opposed to each other is provided. This method is provided with: a first step of forming a composite layer (G,C,S,D) that includes a pixel drive element in a rear substrate; a second step of patterning a first ribalong a boundary of a pixel region on or above the composite layer and a second ribarranged in the pixel area, the second rib having a height that is smaller than that of the first ribin accordance with a photolithography technique; a third step of dropping a light transmission material in a reflection region Pr defined by the first riband the second riband forming a stepped layerin accordance with an ink jet technique; and a fourth step of, after the stepped layerhas been formed, dropping a light coloring materialin a region defined by the first riband forming a color layer in accordance with an ink jet technique.

Color filter structure and display device using the color filter, and manufacturing method thereof

A liquid-crystal cell is formed with first and second transparent substrates opposing each other and a liquid crystal sealed therebetween. A plurality of display electrodes are formed in a matrix arrangement with rows and columns on the inner surface of said first transparent substrate. Gate bus lines are formed on the first transparent substrate along the respective rows of display electrodes. Source bus lines are formed on the first transparent substrate along the respective columns of display electrodes. Thin-film transistors are formed on the first transparent substrate at the intersections of a gate and source bus lines. The thin-film transistors each have a gate electrode connected to the associated gate bus line, a source electrode connected to the associated source bus line and the drain electrode connected to the corresponding display electrode. A common electrode is formed on the second transparent substrate such that it faces the display electrodes. The opposed sides of the source and drain electrodes of each thin-film transistor are constituted by tapered surfaces with the distance therebetween progressively decreased as they approach the first transparent substrate. Ohmic contact layers are formed on these tapered surfaces. A semiconductor of each thin-film transistor is formed over the source and drain electrodes via the ohmic contact layers.

Liquid-crystal display device employing a common electrode consisting of

A liquid-crystal cell is formed with first and second transparent substrates opposing each other and a liquid crystal sealed therebetween. A plurality of display electrodes are formed in a matrix arrangement with rows and columns on the inner surface of said first transparent substrate. Gate bus lines are formed on the first transparent substrate along the respective rows of display electrodes. Source bus lines are formed on the first transparent substrate along the respective columns of display electrodes. Thin-film transistors are formed on the first transparent substrate at the intersections of the gate and source bus lines. The thin-film transistors each have a gate electrode connected to the associated gate bus line, a source electrode connected to the associated source bus line and the drain electrode connected to a corresponding display electrode. A common electrode is formed on the second transparent substrate such that it faces the display electrodes. The opposed sides of the source and drain electrodes of each thin-film transistor are constituted by tapered surfaces with the distance therebetween being progressively decreased as they approach the first transparent substrate. Ohmic contact layers are formed on these tapered surfaces. A semiconductor of each thin-film transistor is formed over the source and drain electrodes via the ohmic contact layers.

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Kobe, Japan

Yasuhiro Matsushita