Nissin Electric Co., Ltd.

Nissin Ion Equipment Co., Ltd.

Yasuhiro Matsuda

Yasunori Ando

Naoto Okazaki

Yutaka Inouchi

Shuichi Maeno

Masahiko Aoki

Masashi Konishi

Syojiro Dohi

When an ion beamis to be extracted from an ion sourceby using a gas containing boron trifluoride as an ion source gasfor supplying the gas into a plasma chamberfor the ion source, a bias voltage Vof a plasma electrodewith respect to the plasma chamberfor the ion sourceis set to be positive by a bias circuit

Method of operating ion source and ion implanting apparatus

A plasma generating apparatus has a plasma-generating vessel into which a gas is introduced. A coaxial line is inserted into the plasma-generating vessel. The coaxial line is insulated from the vessel with an insulator. The coaxial line has a central conductor and an outer conductor, to both of which microwave is supplied from a magnetron. That part of the central conductor which is located inside the plasma-generating vessel has, disposed therein, permanent magnets which form a cusp field. A seed plasma is formed around the permanent magnets by microwave discharge. A direct-current voltage is applied from a direct-voltage source between the outer conductor 24 and the plasma-generating vessel. Upon this application, electrons in the seed plasma move toward the inner wall of the plasma-generating vessel and are accelerated to ionize the gas. The ionized gas serves as seeds to cause arc discharge between the outer conductor and the plasma-generating vessel to generate a main plasma. By disposing an extracting electrode at the opening of the plasma-generating vessel, ion beams can be extracted from the main plasma.

Plasma generating apparatus and ion source using the same

A surface analyzer for analyzing physical properties of the surface of a sample by means of PELS (Proton energy loss spectroscopy) in which accelerated ion beams such as proton beams impinge on the sample in the vertical direction to the surface of the sample and ion beams scattered from the sample are decelerated and then detected by an analyzer to analyze the energy loss of the ion beams. The surface analyzer comprises an ion beam source for generating ion beams, deflecting means for deflecting the ion beams from the ion beam source, irradiating the surface of the sample with the ion beams from the ion beam source in the vertical direction to the surface of the sample, and deflecting scattered ion beams from the sample, accelerating and decelerating means for accelerating the ion beams before the ion beams impinge on the sample and decelerating the scattered ion beams, and analyzing means for detecting the scattered beams and analyzing energy loss of the ion beams.

Surface analyzer

Growing community of inventors

Kyoto, Japan

Yasuhiro Matsuda