Honda Motor Co., Ltd.

Keihin Corporation

Fuji Electric Co., Ltd.

Yasuhiro Maeda

Hitoshi Nishio

Masami Ogura

Morifumi Shigemasa

Kazuya Nagasawa

Hiroaki Iida

Hiromichi Gohara

Ryota Kitamoto

Akira Morozumi

Takaki Nakagawa

Takeshi Ichimura

Yoshinari Tsukada

Daisuke Takeuchi

Shinya Maita

Yuki Negoro

Genki Nakamura

Asako Yoneguchi

Toshitake Ohnishi

Yukihiro Nozaki

Yoshinobu Suhara

Ryo Imagawa

Provided is an n-channel BiMOS semiconductor device having a trench gate structure, the n-channel BiMOS semiconductor device including: an ndrain layer; a parallel pn layer including ndrift and p pillar layers joined alternately; a composite layer including a p base layer and an nsource layer, the ndrain layer, the parallel pn layer, and the composite layer being provided in order; a high-resistance layer provided between a portion of the p base layer above the p pillar layer and the nsource layer; and a high-resistance layer provided between the p pillar layer and the p base layer, the p pillar layer having an impurity concentration lower than that of the ndrift layer.

BiMOS semiconductor device

A control apparatus for a vehicle plant, which is capable of reducing computational load and a storage capacity in a case where the vehicle plant is controlled using a plurality of periodic function values having a plurality of frequencies different from each other. A control apparatus for a fuel cell device includes a first ECU and a second ECU. The second ECU calculates superposition sine wave value of one of frequencies Z to nZ (Hz) based on a frequency command value by a thinning method using a data group of one set of reference sine wave values, stored in a map. The second ECU executes an AC superposition control using the superposition sine wave value, and calculates impedance of the fuel cell device during execution of the AC superposition control. The first ECU executes fuel cell (FC) humidification control process such that the impedance becomes equal to a target value.

Control apparatus for vehicle plant

A power conversion apparatushas a configuration in which a plate-like bus-baris disposed vertically so that a width direction thereof is set in a vertical direction, electrically connected to positive electric potential of a battery and fixed to a resin caseto include a flat plate-like bus-bar body, to which positive electric potential of the battery is applied, and a voltage measuring terminaltobranched from the bus-bar body. The voltage measuring terminaltoincludes a projecting portionprojecting from the bus-bar body, an upright portionextending from the projecting portionupward toward a circuit board, and a measuring terminal portionthat is an upper part of the upright portionand electrically connected to the circuit board

Power conversion apparatus

A power conversion apparatus has a configuration in which plate-like bus-bars are laminated via an insulating material to define a pair of bus-bars. A laminated bus-bar, in which the pair of bus-bars is disposed vertically so that a width direction thereof is in a vertical direction, includes a pair of voltage measuring terminals that is correspondingly branched from a part of the pair of bus-bars to extend toward a circuit board. The pair of voltage measuring terminals is arranged symmetrically with respect to the pair of bus-bars to extend upward toward the circuit board, while extending in an intersecting direction intersecting with the pair of bus-bars, to be electrically connected to the circuit board.

A power converter includes a bus bar, a semiconductor device, a lead, and solder. The bus bar has a vertical wall. The semiconductor device includes an electrode. The lead has one end connected to the bus bar and another end connected to the semiconductor device to supply power from the bus bar to the electrode of the semiconductor device via the lead. The one end of the lead includes a bending part which is spaced away from the bus bar by a predetermined distance and which is inclined in a vertical downward direction. The vertical wall of the bus bar and the bending part are bonded to each other via the solder. The vertical wall extends in a substantially vertical direction to face the bending part.

Power converter

Provided is a semiconductor device comprising a cooler in which, by improving the shape of the connecting portions of an inlet/outlet of a coolant or the like, the pressure loss in the connecting portion or the like can be reduced. A coolerof a semiconductor deviceincludes: an inletand an outletprovided on side wallsof a caseopposing to each other at diagonal positions; an introduction pathwhich is connected to the inletand formed in the case; a discharge pathwhich is connected to the outletand formed in the case; and a cooling flow channelbetween the introduction pathand the discharge path. The height of the opening of the inletis larger than the height of the introduction path, and a connecting portionbetween the inletand the introduction pathincludes an inclined surfacewhich is inclined from the bottom surface of the connecting portiontoward the longitudinal direction of the introduction path

Semiconductor device

Growing community of inventors

Tochigi, Japan

Yasuhiro Maeda