Adv Antest Corporation

Mitsubishi Denki Kabushiki Kaisha

Other

Olympus Medical Systems Corporation

Nisshin Steel Co., Ltd.

Yasuhiro Maeda

Haruo Yoshida

Hiroyuki Hama

Hirohide Aoki

Michiaki Endo

Nobuo Miyamoto

Michio Niwano

Masahiro Ishida

Takahiro Yamaguchi

Mani Soma

Mitsuo Matsumoto

Hiroshi Doi

Keisuke Nagao

Koichi Wada

Minoru Katsumata

Fumikazu Takayanagi

Yoshihide Miyagawa

Naoyuki Kajita

Kuniaki Nakashima

Momoya Fukuda

Seiichi Taniguchi

Yoshikatsu Honda

Hiroshi Ashiba

Treatment device for ultrasonic treatment and high frequency treatment procedure is equipped with an ultrasonic transducer including piezoelectric elements converting electrical power into ultrasonic vibrations. The treatment device includes a transmission rod with a treatment probe and jaw for clasping objects. The transmission rod includes one or more features for damping, to minimize or prevent excess vibrations and to, among other things, decrease frictional heat caused by the friction between the damping features and the transmission rod arising from attenuating the ultrasonic vibrations.

Treatment device with damping feature

A method for manufacturing a probe card includes a first contact formation step of forming a first contact on a first surface of a first sacrificial substrate, a second contact formation step of forming a second contact on a first surface of a second sacrificial substrate, a signal transmission line formation step of forming a signal transmission line in the base substrate, a first contact joining step of attaching the first surface of the first sacrificial substrate to the base substrate and joining the first contact to the signal transmission line, and a second contact joining step of attaching the first surface of the second sacrificial substrate to the base substrate and joining the second contact to the signal transmission line.

Method for manufacturing a probe card

A probe module electrically coupled to a terminal of a device under test for sending and/or receiving a signal to and/or from the device under test, includes a first substrate, a probe pin provided on the first substrate to be in contact with the terminal of the device under test, a first signal transmission pattern formed on the first substrate, the first signal transmission pattern being electrically coupled to the probe pin, with a gap formed at the first signal transmission pattern not to transmit any electric signal, and a for short-circuiting or open-circuiting the gap of the first signal transmission pattern.

Probe module and a testing apparatus

Disclosed is a transformer for a gas insulated electrical apparatus which requires no grounding field and which provides high accuracy with a simple structure. A transformer includes a capacitor type voltage divider having a floating electrode at a position opposed to a high-voltage conductor through an insulation sealing terminal mounted to a flange of a branch pipe provided on an inner surface of the annular grounding container; an ohm resistor for voltage division which has an impedance that is sufficiently smaller than the impedance between the floating electrode and the annular grounding container; and a converting portion which converts the detection voltage of the high-voltage conductor to a voltage value that allows processing on the secondary side.

Transformer for gas insulated electric apparatus

In a three-phase current transformer, a plate adaptor includes first to third coil insertion slots and is a magnetic shield. First to third Rogowskii coils are arranged in the first to third coil insertion slots. The metal adaptor is fixed with a phase-to-phase magnetic shield and an outer peripheral magnetic shield. An end magnetic shield is fixed to an end portion of the phase-to-phase magnetic shield.

Three-phase current transformer

A failure determining apparatus for a gas-insulated electrical appliance where the appliance is a cylindrical metal container with a charged conductor, insulating gas, and a plurality of insulating spaces inside for supporting the conductor and partitioning the container. The failure determining apparatus has a high-speed developing sensor which detects a high-speed phenomenon caused by a failure within the gas sections; a first failure determining circuit which determines the presence of a failure from an output of the high-speed developing sensor; a low-speed developing sensor which detects a low-speed phenomenon caused by a failure within the gas sections; a second failure determining circuit which determines the presence of a failure from an output of the low-speed developing sensor; and an arithmetic control circuit which identifies a gas section of the metal container in which a failure occurs from an output of the first and second failure determining circuits.

Failure determining apparatus of gas-insulated electrical appliance

An infrared beam is applied into an infrared transmitting substrate disposed in an environment to be measured; the infrared beam which has undergone multiple internal reflections in the infrared transmitting substrate and exited from the infrared transmitting substrate is detected; the detected infrared beam is spectroscopically analyzed to measure a species and/or a quantity of the substance in the environment present near the infrared transmitting substrate ; and a species and/or a concentration of the substance in the environment to be measured are measured based on the species and/or the quantity of the substance in the environment present near the infrared transmitting substrate . Thus, the substances in the environment, such as organic contaminants, etc., present in the atmosphere can be identified, or their concentrations can be measured, with high sensitivity and realtime.

Method and apparatus for environmental monitoring

The invention allows for testing by high velocity signals of high density LSIs prior to being packaged having an electrode spacing on the odder of 150 &mgr;m, for example. Coaxial transmission lines for termination formed through a terminal support are arranged in a two-dimensional array. Connected to one ends of the transmission lines are one ends of contact pins such as conductive whiskers while the other ends of the transmission lines are connected to a transmission line block of a three-dimensionally upwardly gradually broadening configuration through a connection plate similar in construction to the terminal support The transmission line block holds high frequency transmission lines for relay connected at one ends to the other ends of the coaxial transmission lines and having spacings between the adjacent lines broadened at the other upper ends. The widely spaced upper ends of the transmission lines are connected to a performance board (not shown). The contact pins are about 0.3 to 0.5 mm in length and the characteristics impedance is maintained uniform over all the transmission lines The terminal support is replaceable.

Integrated microcontact pin and method for manufacturing the same

A substrate treating method and apparatus which can perform in-situ monitoring of surface state of a semiconductor substrate. The substrate treating apparatus comprises substrate treating means for subjecting the substrate to a required treatment, means for condensing infrared radiation emitted by an infrared radiation source onto an outer peripheral part of the substrate and introducing the infrared radiation into the substrate, means for detecting the infrared radiation which has undergone multiple reflection inside the substrate and exited from the substrate, means for analyzing the detected infrared radiation, means for monitoring the surface state of the substrate, and control means for controlling the substrate treating means, based on the monitored surface state of the substrate.

Substrate treating method and apparatus

A surface state monitoring method and apparatus for performing in-situ monitoring of surface states of semiconductor substrates. The apparatus comprises condensing means for condensing infrared radiation to an outer peripheral part of the substrate-to-be-monitored; control means 80 for controlling an incident angle of the infrared radiation condensed by the condensing means ; condensing means for condensing the infrared radiation which has undergone multiple reflection in the substrate-to-be-monitored; detecting means for detecting the infrared radiation condensed by the infrared radiation condensing means , and analyzing means for analyzing the detected infrared radiation detected and measuring contaminants staying on the surfaces of the substrate-to-be-monitored.

Surface state monitoring method and apparatus

The surface state monitoring apparatus comprises: a wafer cassette holding a plurality of semiconductor wafers; an incidence optical system for applying infrared radiation to at least one of said plurality of semiconductor wafers; a detection optical system for detecting the infrared radiation which has undergone multiple reflection in the semiconductor wafer and exited from the semiconductor wafer; surface state monitoring means for monitoring surface states of the semiconductor wafer, based on the infrared radiation detected by the detection optical system; and displacing means for displacing the wafer cassette relative to the incidence optical system and the detection optical system. Surface states of said plurality of semiconductor wafers are sequentially monitored while the wafer cassette is displaced relative to the incidence optical system and the detection optical system by the displacing means, whereby surface states of said plurality of semiconductor wafers held in the wafer cassette are continuously monitored.

A gas insulated switching device including a series of pressure containers and mutually connected, in which a conductor is positioned in an inside center, and an insulating and arc-extinguishing gas is filled in a space around the conductor , and a current transformer fabricated by Rogowskii coils for detecting a current passing through the conductor , the current transformer is attached to flanges of the pressure containers and via a metallic adaptor , wherein the current transformer is accommodated in a groove formed toward an inside of the metallic adaptor and uses the metallic adaptor to obtain an earth potential, whereby the gas insulated switching device having the current transformer with high accuracy can be miniaturized.

Gas insulated switching device

In a method for fabricating an LSI in which primitive devices such as transistors are formed on a semiconductor substrate and a plurality of interconnect layers are formed thereover to provide sub-circuits of successively larger scale and increasing complexity including sub-circuits which are formed by a connection of the primitive devices and sub-circuits of a larger scale which are formed by a connection of the sub-circuits, under a condition that an intermediate interconnect layer is formed, an exhaustive test, a functional test, a stuck-at fault test, a quiescent power supply current test or the like takes place with respect to the primitive devices or the sub-circuits which are wired together by the intermediate interconnect layer, and subsequently, a wiring connection test takes place after the formation of each subsequent interconnect layer. A fault coverage is improved while a testing cost and a fabricating cost are reduced.

Method for fabricating integrated circuit (IC) dies with multi-layered interconnect structures

A chamber (10) is divided into a reaction zone (20) and a sublimation zone (30). A gaseous mixture (41) is supplied through a conduit (21) into the reaction zone (20) and heated by a heater (27). The components in the gaseous mixture (41) are reaxcted with each other to synthesize solid-phase SiC (42). The solid-phase SiC (42) is heated and evaporated by a heater (35), and condensed as a single crystal (43) on a seed crystal attached to a mount base (37). The mount base (37) is rotated and lowered in response to the growth of the SiC single crystal (43) by a rotary shaft (38). Since the SiC single crystal (43) grows from SiC synthesized by the vapor-phase reaction, the obtained product is of very high purity without the substantial inclusion of impurities. In addition, a single crystal having a large diameter or length can be obtained without any restrictions originated in a crucible.

Growing community of inventors

Tokyo, Japan

Yasuhiro Maeda