Dainippon Screen Mfg. Co., Ltd.

Yasuhiro Kurata

Takashi Hara

Kaoru Shinbara

Masaharu Kimura

Kaoru Shimbara

Masashi Sawamura

A substrate treatment method for treating a substrate by supplying a treatment liquid to the substrate while rotating the substrate. The method comprises the steps of: performing a first substrate rotation process for rotating the substrate while clamping the substrate by a first clamping member set; performing a second substrate rotation process after the first substrate rotation step for rotating the substrate while clamping the substrate by the first clamping member set and a second clamping member set provided separately from the first clamping member set; and performing a third substrate rotation process after the second substrate rotation step by unclamping the substrate from the first clamping member set for rotating the substrate while clamping the substrate by the second clamping member set.

Substrate treatment method and substrate treatment apparatus

A substrate treatment apparatus includes a loader 1 for soaking a plurality of wafers W in deionized water, a back surface cleaning portion 2, a front surface cleaning portion 3, a rinsing and drying unit 4 and a plurality of transporting units 6. The back surface cleaning unit 2 cleans the back surface of the wafer W with a brush from the lower side by supplying deionized water to the wafer W that is removed from the loader 1. The front surface cleaning unit 3 cleans the upper surface of the wafer W with a brush by supplying deionized water to the wafer W cleaned by the back surface cleaning unit 2. The rinsing and drying unit 4 rinses the cleaned wafer W and then dries it. There is a transporting unit 6 disposed between the loader 1 and the back surface cleaning unit 2, another unit 6 is disposed between unit 2 and the upper surface cleaning unit 3, and another unit 6 is disposed between unit 3 and the rinsing and drying unit 4 while each of these three transporting units 6 transports the wafer W, deionized water is supplied to the wafer W to prevent being dried during the cleaning treatment.

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Kyoto, Japan

Yasuhiro Kurata