Sumitomo Metal Industries, Inc.

Yasuhiro Kogure

Yoshihiro Akashi

A method for improving the productivity when a single crystal is pulled while being mechanically held at a knob section formed at an upper end of the crystal. By controlling the crucible rotational speed, a reproducible knob section having a complex shape can be formed in a more time efficient manner than if the knob section were formed by controlling the temperature of the heater.

Method for manufacturing a single crystal

A silicon single crystal producing apparatus and method are disclosed. Contamination of a hot molten liquid due to a chuck mechanism is prevented where an upper end part of the silicon single crystal is gripped by the chuck mechanism and is raised after the silicon single crystal is produced. Elevation and rotation of the chuck mechanism can be controlled independently of elevation and rotation of a pulling wire. Before the upper end part of the silicon single crystal is gripped at a bottom part of a pull chamber, the chuck mechanism is set at a standby position at a top of the pull chamber. The chuck mechanism is lowered from the standby position to the grip position. A rotation frequency of the chuck mechanism during lowering is selected as a rotation frequency free of resonance. After lowering and gripping of the silicon single crystal, the chuck mechanism is raised while being rotated in synchronism with the pulling wire.

Growing community of inventors

Hyogo, Japan

Yasuhiro Kogure