Sumco Corporation

Yasuhiro Kogure

Tsuyoshi Nakamura

Ken Hamada

Nobumitsu Takase

Shuichi Inami

In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12&#xd7;10to 18&#xd7;10atoms/cmon ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350&#xb0; C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350&#xb0; C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5&#xb0; C./mm.

Method for growing silicon single crystal and method for manufacturing silicon wafer

A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.

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Saga, Japan

Yasuhiro Kogure