Toray Industries, Inc.

Yasuhiro Kobayashi

Seiichiro Murase

Takahiro Tanino

Sho Miyao

Kazuki Isogai

Yuichiro Iguchi

Tsubasa Hamano

Nobuyasu Fujioka

Takahiro Murai

Provided is a scintillator panel with reduced deterioration in brightness due to irradiation and higher brightness. A scintillator panel including a substrate and a scintillator layer containing phosphors, in which the scintillator layer includes a binder resin having a π-conjugated structure composed of seven or more atoms; in which the glass transition temperature of the binder resin is from 30 to 430° C.; and the thickness of the scintillator layer is from 50 to 800 μm.

Scintillator panel, radiation detector using same, line camera and radiation inspection device, and inline inspection method and inspection method using same

Disclosed is a scintillator panel comprising a substrate, a grid-like barrier rib formed on the substrate, a phosphor layer in cells divided by the barrier rib, and a reflective layer surrounding the side and the bottom of the phosphor layer, the scintillator panel comprising a part where the reflective layer surrounding the side of the phosphor layer is curved and a part where opposing surfaces of the reflective layer at the side of the phosphor layer are approximately parallel, wherein a ratio in a width direction of a part where the reflective layer at the bottom of the phosphor layer is curved to a part where the reflective layer at the bottom of the phosphor layer is flat is 10.0:0 to 1.0:9.0. The brightness of the scintillator panel is improved.

Scintillator panel, radiation detector, radiation inspection device, and method for producing scintillator panel

An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability, where the n-type semiconductor element includes a second insulating layer, where the second insulating layer contains: A. (a) a compound having one carbon-carbon double bond or one conjugated system bound to at least one group represented by general formula (1) and at least one group represented by general formula (2); and (b) a polymer; or B. a polymer having, in its molecular structure, the remaining group after removing some hydrogen atoms from R, R, R, or Rin the compound (a), or the remaining group after removing some hydrogen atoms from the carbon-carbon double bond or the conjugated system in the compound (a).

n-type semiconductor element, method for manufacturing n-type semiconductor element, wireless communication device, and merchandise tag

An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.

n-type semiconductor element, method for producing n-type semiconductor element, wireless communication device, and product tag

A barrier rib paste includes a low-softening point glass powder which contains silicon oxide, aluminum oxide, an alkali metal oxide, and 24 to 37 mol % of boron oxide, and also contains an organic component, wherein the content of an alkali earth metal oxide is 4 mol % or less and the content of zinc oxide is 10 mol % or less.

Barrier rib paste, method of manufacturing member including barrier rib, and member including barrier rib

A scintillator panel including: a plate-like substrate; a grid-like barrier rib provided on the substrate; and a scintillator layer composed of a phosphor filled in cells divided by the barrier rib, wherein the barrier rib is formed of a material which is mainly composed of a low-melting-point glass containing 2 to 20% by mass of an alkali metal oxide. The scintillator panel is provided with a narrow barrier rib with high accuracy in a large area, and the scintillator panel has high luminous efficiency, and provides sharp images.

Growing community of inventors

Otsu, Japan

Yasuhiro Kobayashi