Matsushita Electric Industrial Co., Ltd.

Seisan Kaihatsu Kagaku Kenkyusho

Yasuhiro Kawawake

Hiroshi Sakakima

Mitsuo Satomi

Yasunari Sugita

Yousuke N Irie

Kazuyoshi Honda

Tatsuaki Ishida

Ryuji Sugita

Kiyokazu Tohma

Eiichi Hirota

Yoshiki Goto

Hideaki Adachi

Kiyoyuki Morita

Osamu Kusumoto

Nozomu Matsukawa

Yukihiro Shimasaki

Masayoshi Hiramoto

Kenji Iijima

Shigeo Yoshii

Takeshi Uenoyama

Teruya Shinjo

Toshio Takada, Deceased

Norishisa Mino

Mutuaki Murakami

The present invention provides aligned fine particles that are aligned on a substrate. An organic coating film is bonded to surfaces of the fine particles is formed on the surfaces of the fine particles. An organic coating film bonded to a surface of the substrate is formed on the surface of the substrate. The organic coating film on the surfaces of the fine particles is bonded to the organic coating film on the surface of the substrate, whereby the fine particles are immobilized and aligned on the substrate. Thus, it is possible to align the fine particles of a nanometer scale in a specific direction. When fine magnetic particles are used, a magnetic recording medium for high recording density can be obtained, and a high-density magnetic recording/reproducing apparatus can be provided.

Aligned fine particles, method for producing the same and device using the same

In the present invention, a thin film whose main component is a metal having a specific resistance of 4 &#x3bc;&#x3a9;&#xb7;cm to 200 &#x3bc;&#x3a9;&#xb7;cm is used as a nonmagnetic layer of a so-called CPP-GMR element. Therefore, even when an area of the element becomes limited, the element is not increased excessively in resistance. Thus, even when a magnetic gap is narrow, a large output can be obtained.

Magnetoresistance effect device and magnetoresistance effect head comprising the same, and magnetic recording/reproducing apparatus

A magnetic recording medium includes a magnetic film for signal recording and a film containing M O as a main component that is magnetically exchange-coupled to the magnetic film to increase the effective V and Ku of the magnetic film and to suppress thermal fluctuation. Herein, M is at least one element selected from Fe, Co, Ni, alkaline earth elements, Y, lanthanoids and Bi and includes at least one selected from Fe, Co and Ni as an essential element, and y is a value satisfying 2.8<y<3.2.

Magnetic recording medium and magnetic recording apparatus using the same

A magnetoresistance effect device includes: a free layer whose magnetization direction is easily rotated by an external magnetic field; a non-magnetization layer; and a pinned layer whose magnetization direction is not easily rotated by an external magnetic field, the pinned layer being provided on a face of the non-magnetization layer which is opposite to a face on which the free layer is formed, wherein the pinned layer includes: a first non-magnetic film for exchange-coupling; and first and second magnetic films which are antiferromagnetically exchange-coupled to each other via the first non-magnetic film, and the first non-magnetic film includes one of the oxides of Ru, Ir, Rh, and Re.

MAGNETORESISTANCE EFFECT DEVICE UTILIZING AN OXIDE FILM TO PRODUCE ANTIFERROMAGNETIC EXCHANGE-COUPLING BETWEEN FIRST AND SECOND MAGNETIC FILMS IN EITHER THE PINNED LAYER OR THE FREE LAYER OF THE DEVICE

A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this order on a non-magnetic substrate directly or via an underlying layer. The antiferromagnetic film comprises an &agr;-Fe O film. A surface roughness of the multilayer film is about 0.5 nm or less.

Magnetoresistive device with an &agr;-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness

A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free layer of the first non-magnetic layer, in which a magnetization direction of the first pinned layer is not easily rotated in response to the external magnetic field. At least one of the first pinned layer and the free layer includes a first metal magnetic film contacting the first non-magnetic layer, and a first oxide magnetic film.

Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element

Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film

The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons formed so as to be in contact with at least one of outermost two layers of the magnetic layers. The metal reflective layer is in contact with one surface of the outermost magnetic layer which is opposite to the other surface of the outermost magnetic layer in contact with the non-magnetic layer. The metal reflective layer is likely to reflect conduction electrons while maintaining a spin direction of electrons.

Magnetoresistive device having a highly smooth metal reflective layer

A thin film magnetic head includes an upper shield section, a lower shield section and a magnetoresistance device section between the upper shield section and the lower shield section. The magnetoresistance device section is connected to the upper shield section and the lower shield section through conductive layers. Current flows through the magnetoresistance device section via the upper shield and the lower shield.

Thin film magnetic head

A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the hard magnetic film from the soft magnetic film. The magnetization curve of the hard magnetic film has a good square feature, and the direction of a magnetization easy axis of the hard magnetic film substantially agrees to the direction of a magnetic field to be detected.

Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same

An exchange coupling film of the present invention includes a substrate and a multilayer film. The multilayer film includes: a ferromagnetic layer and a magnetization rotation suppressing layer provided adjacent to the ferromagnetic layer for suppressing a magnetization rotation of the ferromagnetic layer; and the magnetization rotation suppressing layer includes an Fe&mdash;M&mdash;O layer (where M&equals;Al, Ti, Co, Mn, Cr, Ni or V).

Exchange coupling film magnetoresistance effect device magnetoresistance effective head and method for producing magnetoresistance effect device

A magnetoresistive device of the present invention includes: a soft magnetic layer; a hard magnetic layer; a non-magnetic layer formed between the soft magnetic layer and the hard magnetic layer; and an interface magnetic layer, provided at an interface between the soft magnetic layer and the non-magnetic layer, for enhancing magnetic scattering, wherein the soft magnetic layer includes an amorphous structure.

Growing community of inventors

Kyoto, Japan

Yasuhiro Kawawake