Mitsubishi Chemical Corporation

Tohoku University

Wingarc1st Inc.

Nihon Ceratec Co., Ltd.

Yasuhiro Kawase

Makoto Ikemoto

Makoto Ishikawa

Fumikazu Mizutani

Hideki Kiritani

Tadahiro Ohmi

Hitoshi Morinaga

Yasuyuki Shirai

Masanori Yamazaki

Masafumi Kitano

Tomohide Murase

Ken Harada

Tomohiro Kusano

Mari Abe

Mineo Nishi

Koji Nakano

Yasunori Matsushita

Hironori Watanabe

Minoru Tahara

Tadashi Kusumoto

Atsushi Ito

Makoto Takahashi

Takayoshi Hirai

Yutaro Takeshita

Masaya Sugiyama

Toshiaki Shibata

Hiroshi Takaha

Toshiaki Sakakihara

Atsushi Itou

Yukio Kishi

Iho Kamimura

Naoto Kamijo

Takahito Abe

Yasunori Matshushita

An access restriction can be suitably imposed to a user accessing a chatbot iron an external chat system. A user mapping unit substituting external user information with internal user information with reference to a user information storage unit on the basis of external user information that is sent along with a request from an external chat system, and an execution control unit determining execution privilege of connection to a chatbot by an internal user and execution privilege of processing associated with the chatbot with reference to the execution privilege storage unit on the basis of the substituted internal user information and determining whether or not to execute processing according to the request are provided, the external user information is substituted with the internal user information, and then, it is determined whether or not the execution privilege of the connection to the chatbot and the execution privilege of the processing are granted to the internal user information, and the execution of the processing is controlled in accordance with a determination result thereof.

Chatbot control device and chatbot control method

The present invention relates to a cleaning liquid containing a component (A): a compound represented by the following formula (1), component (B): alkylamine, component (C): polycarboxylic acid, and component (D): ascorbic acid, in which a mass ratio of the component (A) to a total mass of the component (B) and the component (C) is 1 to 15, and in the formula (1), R, R, and Reach have a definition same as the definition described in the description, 

Cleaning liquid, cleaning method, and method for producing semiconductor wafer

A chat management apparatus allocates a plurality of chat rooms to talk servers in a distributed manner, and performs a control operation to switch to another talk server and deliver content when a failure occurs in one talk server. Further, by providing content posted from a user terminal to a history data storage unit, which is an independent external storage apparatus different from the talk servers, and storing the content, it makes unnecessary to perform synchronization processing of content data posted on a chat room even when the plurality of chat rooms is made redundant and managed in the plurality of talk servers in a distributed manner as a countermeasure against a failure.

Chat system and chat management apparatus

According to the present invention, there is provided a cleaning agent composition for a semiconductor device substrate including at least one of wiring and an electrode in which the wiring and the electrode contain cobalt or a cobalt alloy, the cleaning agent composition including a component (A): at least one compound selected from the group consisting of specific compounds; and a component (B): water.

Cleaning agent composition for semiconductor device substrate, method of cleaning semiconductor device substrate, method of manufacturing semiconductor device substrate, and semiconductor device substrate

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 &#x3bc;m and at most 1 &#x3bc;m, and which are spherical, and a resin (A) having a melt viscosity at 120&#xb0; C. of at most 100 Pa&#xb7;s.

Agglomerated boron nitride particles, composition containing said particles, and three- dimensional integrated circuit having layer comprising said composition

To provide a composition which satisfies a high K1c value, a high glass transition temperature and a low viscosity simultaneously, and which is capable of forming an interlayer filler layer for a layered semiconductor device of which stable bonding is maintained even regardless of changes of environment. A composition comprising an epoxy compound (A) having a viscosity at 25&#xb0; C. of at most 50 Pa&#xb7;s, an amine compound (B) having a melting point or softening point of at least 80&#xb0; C., and an amine compound (C) having a melting point or softening point of less than 80&#xb0; C., wherein the proportion of the amine compound (C) is at least 1 part by weight and less than 40 parts by weight per 100 parts by weight of the total amount of the amine compound (B) and the amine compound (C).

Composition for interlayer filler of layered semiconductor device, layered semiconductor device, and process for producing layered semiconductor device

To provide an interlayer filler composition which, in 3D lamination of semiconductor device chips, forms a highly thermally conductive filling interlayer simultaneously with the bonding of solder bumps or the like and lands between semiconductor device chips, a coating fluid and a process for producing a three-dimensional integrated circuit. An interlayer filler composition for a three-dimensional integrated circuit, which comprises a resin (A) having a melt viscosity at 120&#xb0; C. of at most 100 Pa&#xb7;s and a flux (B), the content of the flux (B) being at least 0.1 part by weight and at most 10 parts by weight per 100 parts by weight of the resin (A).

Interlayer filler composition for three-dimensional integrated circuit

To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property. A three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(m&#xb7;K) between the semiconductor substrate.

Three-dimensional integrated circuit laminate, and interlayer filler for three-dimensional integrated circuit laminate

Agglomerated boron nitride particles, composition containing said particles, and three-dimensional integrated circuit having layer comprising said composition

To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property, a three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(rrrK) between the semiconductor substrate.

A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cmor less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

Metal oxide film, laminate, metal member and process for producing the same

A structural member for a manufacturing apparatus has a metal base member mainly composed of aluminum, a high-purity aluminum film formed on the surface of the metal base member, and a nonporous amorphous aluminum oxide passivation film which is formed by anodizing the high-purity aluminum film. A method for producing a structural member for a manufacturing apparatus, includes forming a high-purity aluminum film on the surface of a metal base member mainly composed of aluminum, and anodizing the high-purity aluminum film in a chemical conversion liquid having a pH of 4-10 and containing a nonaqueous solvent, which has a dielectric constant lower than that of water and dissolves water, thereby converting at least a surface portion of the high-purity aluminum film into a nonporous amorphous aluminum oxide passivation film.

Structural member to be used in apparatus for manufacturing semiconductor or flat display, and method for producing the same

In a method of manufacturing a metal member, a metal material containing aluminum as a main component is anodized in an anodization solution having a pH of 4 to 10 and containing a nonaqueous solvent having a dielectric constant smaller than that of water and capable of dissolving water, thereby forming a nonporous amorphous aluminum oxide passivation film on a surface of the metal member. The method includes a step of controlling the viscosity of the anodization solution. In the step of controlling the viscosity, the viscosity of the anodization solution is lowered by elevating the temperature of the anodization solution above the room temperature or by adding to the anodization solution a substance having a dielectric constant smaller than that of water and a viscosity lower than that of the nonaqueous solvent.

Metal member having a metal oxide film and method of manufacturing the same

A protective film structure of a metal member for use in an apparatus for manufacturing a semiconductor or the like, the protective film structure including a first coating layer of faultless aluminum oxide formed by direct anodic oxidation of a base-material metal of an aluminum alloy; and a second coating layer formed on the first coating layer and made of yttrium oxide by a plasma spraying method.

Protective film structure of metal member, metal component employing protective film structure, and equipment for producing semiconductor or flat-plate display employing protective film structure

Growing community of inventors

Kitakyushu, Japan

Yasuhiro Kawase