Anritsu Corporation

Yasuhiro Kanaya

Hiroshi Mori

Yasuaki Nagashima

Tomoyuki Kikugawa

Yoshinori Nakano

Disclosed is a semiconductor laser capable of preventing diffusion of a p-type dopant to an active layer while performing sufficient carrier blocking, even when Zn is used as a p-type dopant, and obtaining high emission efficiency and high output by minimizing light absorption in a p-type cladding layer. This semiconductor laser includes an active layer and p-type cladding layer on an n-type semiconductor substrate. The concentration distribution of a p-type dopant from the active layer to the p-type cladding layer has a maximum value at a distance of 50 to 250 nm from the end of the active layer.

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Isehara, Japan

Yasuhiro Kanaya