Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Yasuhiro Kanamaru

Takashi Hashimoto

Yoshiyuki Kawashima

Kousuke Okuyama

Yasushi Ishii

Takeshi Sakai

Makoto Mizuno

Fumitoshi Ito

Keiji Hanzawa

Yukiko Manabe

Masahiro Matsumoto

Hiroshi Nakano

Masamichi Yamada

Izumi Watanabe

Keiichi Nakada

The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.

Semiconductor device comprising a memory cell group having a gate width larger than a second memory cell group

Conventional thermal flow measurement devices lack consideration for automobiles in severe environments. A detection element of the thermal flow measurement device according to the present invention is structured by the provision of a planar substrate made of a material having good thermal conductivity, such as silicon or ceramic, with a thin-walled portion (diaphragm). On the surface of the thin-walled portion, the detection element comprises a heat element as a heater heated to a temperature being different to a predetermined extent from the temperature of the air flow to be measured, temperature-detecting resistors as temperature-detecting means on both sides of the heat element, wiring portions formed of electrical conductors that draw signal lines from the heat element and the temperature-detecting resistors and that have a melting point of 2000&#xb0; C. or higher, and pads.

Reduced resistance thermal flow measurement device

Semiconductor device

The coupling capacitance of the wiring portions of a thermal type flow rate measuring apparatus is reduced so as to prevent a drop in the response characteristics. A detection element of the thermal type flow rate measuring apparatus includes a planar substrate made of silicon, ceramic, or the like, in which a diaphragm is formed. On the surface of the diaphragm, there are disposed a heat-generating resistor as a heat-generating element that is heated to a predetermined temperature difference from the temperature of air flow to be measured, a heat-generating element temperature-detecting resistor for detecting the temperature of the heat-generating resistor, and temperature-detecting resistors disposed on both sides of the heat-generating resistor. The detection element also includes wiring portions which have connecting terminals electrically connected to the heat-generating resistor and a wiring pattern electrically connected with the surface of the planar substrate.

Thermal type flow rate measuring apparatus having decrease in coupling capacitance between wiring portions of detection element

An object of the invention is to realize a thermal gas flow sensor capable of reducing time fluctuation of a heating resistor. A heating resistorand thermometric resistorsandare formed on a surface of a thin-wall portion. Electrode drawn wirestoand pad portionstoare formed so as to draw signal lines from the heating resistorand the thermometric resistorsand. Contact portionstoare formed to come in contact with the heating resistor, the thermometric resistorsand, and the electrode drawn wiresto. The heating resistorand the thermometric resistorsandare covered with protective films, andand insulating filmsand. The protective filmsandare formed of a dense film formed of nitride or the like. A part coming in contact with a drawn wire portionand the heating resistoris covered with a contact barrier metal film(titanium-based electrical conductor such as titanium nitride, titanium tungsten, and titanium). The titanium-based electrical conductor is a dense film and resistant to hydrogen. Therefore, it is possible to reduce a time fluctuation of the heating resistor.

Thermal gas flow and control device for internal-combustion engine using the same

A semiconductor device has a nonvolatile memory employing a split-gate type memory cell structure, using a nitride film as a charge storage layer. An n-type semiconductor region is formed in a main surface of a semiconductor substrate, and then, a memory gate electrode of a memory cell of a split gate type and a charge storage layer are formed over the semiconductor region. Subsequently, side walls are formed on side surfaces of the memory gate electrode, and a photoresist pattern is formed over the main surface of the semiconductor substrate. The photoresist pattern serves as an etching mask, and a part of the main surface of the semiconductor substrate is removed by etching to form a dent. In the region of the dent, the n-type semiconductor region is removed. Then, a p-type semiconductor region for forming a channel of an nMIS transistor for selecting a memory cell is formed.

Semiconductor device and a method of manufacturing the same

Growing community of inventors

Hitachinaka, Japan

Yasuhiro Kanamaru