Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Yasuhiro Jinbo

Shunpei Yamazaki

Hidekazu Miyairi

Yoshiharu Hirakata

Kohei Yokoyama

Hisao Ikeda

Shingo Eguchi

Hajime Kimura

Koji Dairiki

Akihisa Shimomura

Masafumi Morisue

Hiroki Adachi

Satoru Idojiri

Masakatsu Ohno

Tetsuji Ishitani

Toshiyuki Isa

Hideto Ohnuma

Akihiro Chida

Ryu Komatsu

Hideaki Shishido

Tomoya Aoyama

Tetsuya Kakehata

Hironobu Shoji

Yuji Egi

Sachiaki Tezuka

Naoki Okuno

Takaaki Nagata

Hiroyuki Miyake

Yoshiyuki Kurokawa

Hideaki Kuwabara

Junya Maruyama

Daisuke Kubota

Kouhei Toyotaka

Takashi Hamada

Daisuke Kawae

Satoshi Toriumi

Makoto Furuno

Satoshi Kobayashi

Fumito Isaka

Shinichi Hirasa

Sachiaki Teduka

Takeshi Osada

Tatsuya Honda

Gen Fujii

Masataka Nakada

Yoshitaka Dozen

Taisuke Kamada

Kayo Kumakura

Naoto Goto

Satoshi Seo

Kenichi Okazaki

Toshinari Sasaki

Masami Jintyou

Hiromichi Godo

Takayuki Kato

Daiki Nakamura

Yoshitaka Yamamoto

Akio Endo

Tomokazu Yokoi

Masaki Koyama

Erika Takahashi

Naoyuki Senda

Tatsuya Sakuishi

Minato Ito

Masahiro Takahashi

Masayoshi Dobashi

Yuki Tamatsukuri

Tomohiro Kimura

Hideomi Suzawa

Shinya Sasagawa

Kensuke Yoshizumi

Ryota Tajima

Tetsuhiro Tanaka

Toshiki Sasaki

Mitsuhiro Ichijo

Takuya Hirohashi

Akio Yamashita

Ryota Hodo

Hitoshi Kunitake

Masao Moriguchi

Jun Ishikawa

Kosei Nei

Takahiro Iguchi

Takafumi Mizoguchi

Natsuko Takase

Shinobu Furukawa

Kazuki Tsuda

Eiji Higa

Yosuke Kanzaki

Tomonori Nakayama

Erika Kato

Yuuichi Takehara

Tomosato Kanagawa

Takashi Ienaga

Yujiro Sakurada

Makoto Foruno

Shuntaro Kochi

A semiconductor device with a small variation in characteristics is provided. A semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and placed between the first conductor and the second conductor, a sixth insulator over the fifth insulator, and a third conductor over the sixth insulator. The third conductor includes a region overlapping the oxide. The fifth insulator includes a region in contact with the oxide, the first conductor, the second conductor, and each of the first insulator to the fourth insulator. The fifth insulator contains nitrogen, oxygen, and silicon.

Semiconductor device and method for manufacturing semiconductor device

A light-emitting device can be folded in such a manner that a flexible light-emitting panel is supported by a plurality of housings which are provided spaced from each other and the light-emitting panel is bent so that surfaces of adjacent housings are in contact with each other. Furthermore, in the light-emitting device, in which part or the whole of the housings have magnetism, the two adjacent housings can be fixed to each other by a magnetic force when the light-emitting device is used in a folded state.

Light-emitting device

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a second oxide provided over the first oxide and being in contact with the side surface of the first conductor and the side surface of the second conductor; a third oxide provided over the second oxide and including regions in contact with the side surface of the first insulator and the side surface of the second insulator; a third insulator over the third oxide; and a third conductor over the third insulator.

Semiconductor device

A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and is located between the first conductor and the second conductor; a sixth insulator over the fifth insulator; a seventh insulator over the sixth insulator, and a third conductor over the seventh insulator. The third conductor includes a region overlapping with the oxide, the fifth insulator has a region that is in contact with each of the oxide, the first conductor, the second conductor, and the first to fourth insulators, and the sixth insulator contains hydrogen, nitrogen, oxygen, and silicon.

Semiconductor device and manufacturing method of semiconductor device

A display device in which a peripheral circuit portion has high operation stability is provided. The display device includes a first substrate and a second substrate. A first insulating layer is provided over a first surface of the first substrate. A second insulating layer is provided over a first surface of the second substrate. The first surface of the first substrate and the first surface of the second substrate face each other. An adhesive layer is provided between the first insulating layer and the second insulating layer. A protective film in contact with the first substrate, the first insulating layer, the adhesive layer, the second insulating layer, and the second substrate is formed in the vicinity of a peripheral portion of the first substrate and the second substrate.

Display device, manufacturing method of display device, and electronic device

Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.

Display device

A semiconductor device with a small variation in transistor characteristics is provided. An oxide semiconductor film, a source electrode and a drain electrode over the oxide semiconductor film, an interlayer insulating film placed to cover the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the oxide semiconductor film are included; an opening is formed overlapping with a region between the source electrode and the drain electrode in the interlayer insulating film; the gate electrode is placed in the opening in the interlayer insulating film; and the source electrode and the drain electrode include a conductive film having compressive stress.

Transistor and electronic device

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

Method for manufacturing semiconductor device

A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vhigher than or equal to −0.3 V.

Transistor and display device

A semiconductor device having favorable electrical characteristics is provided. A first oxide is formed over a substrate; a first insulator is formed over the first oxide; an opening reaching the first oxide is formed in the first insulator; a first oxide film is deposited in contact with the first oxide and the first insulator in the opening; a first insulating film is deposited over the first oxide film; microwave treatment is performed from above the first insulating film; heat treatment is performed on one or both of the first insulating film and the first oxide; a first conductive film is deposited over the first insulating film; and part of the first oxide film, part of the first insulating film, and part of the first conductive film are removed until a top surface of the first insulator is exposed, so that a second oxide, a second insulator, and a first conductor are formed. The microwave treatment is performed using a gas containing oxygen under reduced pressure, and the heat treatment is performed under reduced pressure.

A display device that can switch between normal display and see-through display is provided. Visibility in see-through display is improved. A liquid crystal element overlaps with a light-emitting element. The light-emitting element, a transistor, and the like overlapping with the liquid crystal element transmit visible light. When the liquid crystal element blocks external light, an image is displayed with the light-emitting element. When the liquid crystal element transmits external light, an image displayed with the light-emitting element is superimposed on a transmission image through the liquid crystal element.

Display device and driving method of display device

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Kanagawa, Japan

Yasuhiro Jinbo