Hitachi-kokusai Electric Inc.

Kokusai Electric Co., Ltd.

Kokusai Electric Corporation

Yasuhiro Inokuchi

Atsushi Moriya

Fumihide Ikeda

Kazuyuki Toyoda

Kazuyuki Okuda

Nobuo Ishimaru

Tadashi Kontani

Motonari Takebayashi

Yasuo Kunii

Norikazu Mizuno

Masayuki Asai

Masayoshi Minami

Tomoki Imamura

Syuzo Sakurai

Yoshiaki Hashiba

Katsuhiko Yamamoto

Takashi Yokogawa

Tetsuya Marubayashi

Yasuhiro Ogawa

Norio Suzuki

Takaaki Noda

Tetsuaki Inada

Tomoji Watanabe

Kiyohisa Ishibashi

Masayuki Tsuneda

Satoru Tagami

Nobuyuki Mise

Yoshihiko Sakurai

Masatoshi Takada

Yohsuke Inoue

Mamoru Sueyoshi

Hisashi Nomura

Michiko Nishiwaki

Junichi Machida

Kazuhiro Shimeno

Toshiyuki Uchino

Toshiya Uenishi

Tadanori Yoshida

Ryoichi Furukawa

Minoru Kogano

Makoto Sambu

Masayuki Tomita

Junichi Murota

Described herein is a technique capable of improving the controllability of firm thickness distribution. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber; a first and a second gas supply system; an exhaust system; and a controller for controlling the first and the second gas supply system and the exhaust system to form a film. The first gas supply system includes: a first and a second storage part; a first gas supply port for supplying a gas stored in the first storage part from an outer periphery toward a center of a substrate; and a second gas supply for supplying the gas stored in the second storage part from the outer periphery along a direction more inclined toward the outer periphery than a direction from the outer periphery toward the center of the substrate.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

Provided is processing of a substrate including: forming film on substrate by performing cycle, multiple times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate. In (a), at least one of the precursor and inert gas stored in first tank is supplied to the substrate, and at least one of the precursor and inert gas stored in second tank is supplied to the substrate. A concentration of the precursor gas in the first tank differs from that in the second tank. Further, in (a), the at least one of the precursor and inert gas is supplied from the first tank to the substrate, and the at least one of the precursor and inert gas is supplied from the second tank to the substrate to suppress multiple adsorption of molecules constituting the precursor gas on the substrate's surface.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided technique including: forming film on substrate by performing cycle, predetermined number of times, including non-simultaneously performing: (a) supplying precursor gas and inert gas to the substrate; and (b) supplying reaction gas to the substrate, wherein in (a), at least one selected from the group of the precursor gas and the inert gas stored in first tank is supplied to the substrate, and at least one selected from the group of the precursor gas and the inert gas stored in second tank is supplied to the substrate, and concentration of the precursor gas in the first tank while at least one selected from the group of the precursor gas and the inert gas is stored in the first tank differs from that in the second tank while at least one selected from the group of the precursor gas and the inert gas is stored in the second tank.

Method of processing substate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Batch-type remote plasma processing apparatus

Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate.

Substrate processing apparatus and semiconductor device producing method

It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas.

Substrate treatment device

Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing.

Semiconductor device producing method with selective epitaxial growth

Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.

Method of manufacturing semiconductor device and substrate processing apparatus

Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube, a substrate holder, a gas nozzle, a heating unit, a temperature detector, and an exhaust unit. The reaction tube accommodates and processes substrates. The substrate holder holds substrates stacked at predetermined intervals in the reaction tube. The gas nozzle is installed along a stacked direction of the substrates. The heating unit heats the substrates. The temperature detector is installed along the stacked direction of the substrates. The exhaust unit exhausts an inside atmosphere of the reaction tube. Each of the gas nozzle and the temperature detector includes first and second parts and is supported by a narrow tube supporting member including first and second supporting parts. The first supporting part makes contact with the first part. The second supporting part is parallel with the second part and supports the second part.

Substrate processing apparatus

Growing community of inventors

Tokyo, Japan

Yasuhiro Inokuchi