Tokyo Shibaura Denki Kabushiki Kaisha

Toshiba Ceramics Co., Ltd.

Yasuhiro Imanishi

Hisashi Muraoka

Toshiro Usami

Shuitsu Matsuo

Hideo Nagashima

Masaharu Watanabe

An apparatus for producing silicon single crystal from melted silicon by the pull-up process using a seed crystal, wherein at least a portion of a device in contact with the melted silicon includes a layer of silicon nitride precipitated from gaseous phase and comprising 20% or above of .beta. phase, or comprising 80% or above of .alpha. phase whose crystal grains have grain diameters of 5 .mu.m or above at a ratio of 10% or more.

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Tokyo, Japan

Yasuhiro Imanishi