Fujikura Limited

Other

Chubu Electric Power Company, Inc.

International Superconductivity Technology Center, the Juridical Foundation

The Juridical International Superconductivity Technology Center

Yasuhiro Iijima

Takashi Saitoh

Takashi Saito

Nobuo Tanabe

Nobuyuki Sadakata

Mariko Kimura

Satoru Hanyu

Izumi Hirabayashi

Mariko Hosaka

Masataka Mochizuki

Tomonori Watanabe

Yuichi Nakamura

Takeshi Araki

Yuh Shiohara

Teruo Izumi

Shigeo Nagaya

Yutaka Yamada

Hisashi Yoshino

Yasuji Yamada

Osamu Kohno

Hiroshi Fuji

Taichi Yamaguchi

Kazunori Onabe

Kaoru Takeda

Tetsuji Honjo

Toshihiro Suga

Koji Muranaka

Haruhiko Kurosaki

Seok Beom Kim

Naoki Hirano

Toshihiko Maeda

An IBAD apparatus includes, a target, a sputter ion source irradiating the target with sputter ions to sputter some of constituent particles of the target, a film formation region in which a base material for depositing thereon the particles sputtered from the target is disposed, and an assist ion beam irradiation device irradiating assist ion beams from a direction oblique to the direction of a normal of the film formation surface of the base material disposed in the film formation region, where the sputter ion source includes a plurality of ion guns arranged so as to be able to irradiate the target from an end portion on one side to an end portion on the other side with sputter ion beams, and current values for generating the sputter ion beams of the plurality of ion guns are set respectively.

IBAD apparatus and IBAD method

A method of forming an underlying layer of an alignment film for an oxide superconducting conductor, includes arranging two or more kinds of targets along a lengthwise direction of a base material so as to face a surface of the base material; simultaneously irradiating an ion beam on surfaces of the two or more kinds of targets to deposit constituent particles of the targets on the surface of the base material in the order of the arrangement of the two or more kinds of targets; and forming a laminate in which two or more kinds of thin films are repeatedly laminated on the surface of the base material by passing the base material through a deposition region of the constituent particles a plurality of times so that the constituent particles of the targets are repeatedly deposited on the surface of the base material at each passage.

Underlying layer of alignment film for oxide superconducting conductor and method of forming same, and device for forming same

An object of the invention is to provide a polycrystalline thin film which includes an intermediate layer that is made thinner while keeping high crystal orientation so as to prevent warpage of a substrate resulting from internal stress of the film. A polycrystalline thin film according to the invention includes an intermediate layer formed by a first layer and a second layer laminated in this order and provided on a metal substrate. The first layer has a rock-salt crystal structure and the second layer has a fluorite crystal structure.

Polycrystalline thin film, method for producing the same and oxide superconductor

A production method for a polycrystalline thin film, depositing polycrystalline thin film on a polycrystalline substrate. The temperature of the polycrystalline substrate is set within a range from 150&#xb0; C. to 250&#xb0; C., the ion beam energy of the ion beam is adjusted within a range from 175 eV to 225 eV, and the ion beam is irradiated at an angle of incidence from 50&#xb0; to 60&#xb0; with respect to the normal for the film forming surface of the polycrystalline substrate. By this production method, the grain boundary inclination angle, formed by identical crystal axes of the crystal grains along a plane parallel to the film forming surface of the polycrystalline substrate, is limited to 20&#xb0; or less, and a polycrystalline thin film having a strong crystal orientation can be stably produced.

Method of producing polycrystalline thin film and method of producing an oxide superconducting element

There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaO&#x2014;CuO&#x2014;BaFsystem or a BaO&#x2014;CuO&#x2014;Ag&#x2014;BaFsystem, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850&#xb0; C.

Method of preparing oxide crystal film/substrate composite and solution for use therein

A heat radiating structure for an electronic device, for cooling an electronic part by transferring the heat generated in the electronic part to a heat spreader has a grading layer, which is located between the electronic part and the heat spreader and having a coefficient of thermal expansion varied such that it is substantially equal or approximate at its portion on the electronic part side to the coefficient of thermal expansion of the electronic part and such that it is substantially equal or approximate at its portion on the heat spreader side to the coefficient of thermal expansion of the heat spreader.

Heat radiating structure for electronic device

A polycrystalline thin film of MgO is formed on a substrate by an ion sputtering process wherein the thin film is obtained by irradiating a target with an ion beam to dislodge particles from the target and deposit the particles on the substrate. The film is preferably formed in an atmosphere at a reduced pressure of 3.0&times;10 Pa or lower while keeping the substrate temperature at 300&deg; C. or lower.

Method of producing polycrystalline thin film of MgO

A polycrystalline thin film B consisting mainly of oxide crystal grains which have a crystal structure of a Type C rare earth oxide represented by one of the formulas Y O , Sc O , Nd O , Sm O , Eu O , Gd O , Tb O , Dy O , Ho O , Er O , Yb O , Lu O , and Pm O formed on a film forming surface of a polycrystalline substrate A wherein grain boundary inclination angles between the corresponding crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30 degrees.

Polycrystalline thin film and method of producing the same and oxide superconductor and method of producing the same

The polycrystalline thin film is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from among Y, Yb, Tm, Er, Ho, Dy, Eu, Gd, Sm, Nd, Pr, Ce and La) formed on the film forming surface of the polycrystalline substrate, wherein the grain boundary misalignment angle between the same crystal axes of different crystal grains in the polycrystalline thin film along a plane parallel to the film forming surface of the polycrystalline substrate are controlled within 30&deg;.

Polycrystalline thin film and method for preparing thereof, and superconducting oxide and method for preparation thereof

The present invention provides a tape-form oxide superconductor having a high degree of c-axis alignment and in-plane alignment and an improved Jc value. On a tape-form metal substrate which is non-magnetic or weakly magnetic and has high strength, there are sequentially formed a first intermediate layer wherein YSZ or Zr Rx O particles are deposited from a target with ion irradiation from a direction inclined to the metal substrate, a second intermediate layer of CeO or Y O is formed and an RE Ba Cu O superconducting layer is formed by coating metalorganic salts containing F, followed by thermal decomposition.

Tape-formed oxide superconductor

A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target ( ) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source ( ) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film ( ) exhibiting excellent superconducting properties.

Method for making polycrystalline thin film and associated oxide superconductor and apparatus therefor

A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (,) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (,) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (,) exhibiting excellent superconducting properties.

Process for preparing polycrystalline thin film, process for preparing oxide superconductor, and apparatus therefor

A chemical vapor deposition (CVD) reactor for forming a film at the surface of a base material, and a production method for an oxide superconductive conductor using this CVD reactor, are disclosed. The CVD reactor is provided with a processing chamber, a material gas supply mechanism which supplies material gas into the processing chamber, and a gas exhaust mechanism which vents gas from inside the processing chamber. The processing chamber is divided by partitions into a base material introduction section, a reaction chamber, and a base material guide-out section. A base material transit opening is formed in each partition, and a base material conveyance region is formed inside the reaction chamber passing through the base material introduction section, the reaction chamber and the base material guide-out section. The material gas supply mechanism is provided with a material gas supply source and a gas disperser and is connected to the material gas supply source. The gas exhaust mechanism is equipped with gas exhaust holes provided at both sides of the base material conveyance region opposite the side where the gas diffuser is disposed, and with a gas venter connected to the gas exhaust holes. The gas diffuser and the gas exhaust holes oppose each other with the base material conveyance region therebetween. The CVD reactor may be used to produce an oxide superconductive conductor by forming a superconductive layer at the surface of a base material while adjusting the flow of gas around the base material.

Chemical vapor deposition reactor and method of producing oxide

The present invention relates to a polycrystalline thin film deposit acting as a substrate material composed of grains of a cubic structure in which the intergranular misorientation, defined as the orientation difference between the a-axes (or b-axes) of the neighboring grains, is less than 30 degrees. Such a substrate base is produced by depositing a target material on a base material by sputtering while irradiating the substrate base with ion beams at an oblique angle to the base. The preferred range of the oblique angle is between 40 to 60 degrees. Examples are presented of application of such textured polycrystalline substrate base for the production of superconducting oxide thin layer of outstanding superconducting properties.

Growing community of inventors

Tokyo, Japan

Yasuhiro Iijima