Canon Kabushiki Kaisha

Yasuhiro Hamamoto

Keisuke Yamamoto

Masato Yamanobe

Takeo Tsukamoto

Sotomitsu Ikeda

Kazuya Miyazaki

Toshikazu Ohnishi

Fumio Kishi

Toshihiko Takeda

Hidetoshi Suzuki

Ichiro Nomura

Hisaaki Kawade

Miki Tamura

Tatsuya Iwasaki

Takeo Ono

Naoto Nakamura

Mitsutoshi Hasegawa

Yutaka Arai

Ihachiro Gofuku

Yoshinobu Sekiguchi

Kazuya Shigeoka

Masanori Mitome

Takahiro Oguchi

Yasue Sato

Koji Yamazaki

Yoshiyuki Osada

Yoshikazu Banno

Aoji Isono

Eiji Yamaguchi

Kazuhiro Sando

Katsuhiko Shinjo

Hironobu Mizuno

Shuji Aoki

Hiroaki Toshima

Masahiro Okuda

Shinichi Kawate

Masafumi Kyogaku

Noritake Suzuki

Yasuyuki Todokoro

Both the size reduction and the increase in breakdown voltage of a high-voltage isolation transformer are realized, which is to be used in an insulating liquid in an X-ray generating apparatus. In the isolation transformer, an annular core and a primary coil wound around the annular core are housed in a first container, and a secondary coil is wound around the first container. A first opening through which an insulating liquid flows is provided in the first container.

Isolation transformer, and X-ray generating apparatus and radiography system including the same

A method of calculating node potentials in a network including current flow nodes on wirings with high precision at high speed is provided. Provided are a drive method of making voltages applied to electron-emitting devices uniform using the calculating method and an apparatus for manufacturing an image display apparatus including the electron-emitting devices. Assume that n nodes are located between one end of a wiring in which a potential Dis set and the other end of the wiring in which a potential Dis set. At a j-th node counted from the one end, when a current value flowing therefrom is I, a node potential is V, resistance elements between a terminal and a node and between adjacent nodes are Rto R, and a resistance between both end of the wiring is R, the node potential Vis calculated by the following expression. 

Method of manufacturing image display apparatus

An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &#x3bc;m, peaks of scattered light, of which 1) a peak (P) located in the vicinity of 1,580 cmis greater than a peak (P) located in the vicinity of 1,335 cmor 2) the half-width of a peak (P) located in the vicinity of 1,335 cmis not greater than 150 cm.

Method for manufacturing an electron-emitting device with first and second carbon films

An image display apparatus capable of displaying a preferable image whose dark place contrast has a large value and whose color-reproducibility and gray-level reproducibility are excellent. A voltage level of a scanning selective signal is changed in response to a request from outside or the like, so that a black level luminance is reduced to improve dark place contrast. In addition, when the voltage level of the scanning selective signal is changed, a conversion table for converting an input luminance into a modulation signal is changed to another conversion table. Therefore, for example, it is possible to maintain a display gray-level characteristic before and after the voltage level of the scanning selective signal is changed.

Image display apparatus

The present invention provides an electron emitting device comprising: a pair of conductors opposed to each other on a substrate; and a pair of deposition films having carbon as a main component which are respectively connected to the pair of conductors and disposed with a gap therebetween. The deposition film contains sulfur in a range of not less than 1 mol % and not more than 5 mol % as a ratio to carbon.

Electron-emitting device, electron source using the electron-emitting device, and image-forming apparatus using the electron source

Method for manufacturing an electric emitting device with first and second carbon films

An electron-emitting device comprises a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &#x3bc;m, peaks of scattered light, of which 1) a peak (P2) located in the vicinity of 1,580 cmis greater than a peak (P1) located in the vicinity of 1,335 cmor 2) the half-width of a peak (P1) located in the vicinity of 1,335 cmis not greater than 150 cm.

Electron-emitting device, electron source and image-forming apparatus as well as method of manufacturing the same

The present invention provides an electron emitting device including electrodes disposed with a space therebetween on a surface of a substrate, a carbon film disposed between the electrodes and connected to one of the electrodes, and a gap disposed between the carbon film and the other electrode. In the gap, the distance between the edge of the carbon film connected to one of the electrode and the edge of the other electrode at an upper position apart from the surface of the substrate is smaller than that at the surface of the substrate. The present invention also provides an electron source and an image display device each including the electron emitting device.

Electron emitting device, electron source and image display device and methods of manufacturing these devices

In an electron-emitting device having a pair of electric conductors disposed on a substrate in opposed relationship with each other, and a pair of piled films composed chiefly of carbon and connected to the pair of electric conductors and disposed with a gap interposed therebetween, the piled films contain therein one or more kinds of elements selected from the group of lithium, potassium, sodium, calcium, strontium and barium within the range of 1 mol % to 5 mol % in terms of the percentage to carbon.

Electron-emitting device, electron source using the same, and image forming apparatus using the same

An electron emitting device comprising: a pair of conductors opposed to each other on a substrate; and a pair of deposition films having carbon as a main component which are respectively connected to the pair of conductors and disposed with a gap therebetween. The deposition film contains sulfur in a range of not less than 1 mol % and not more than 5 mol % as a ratio to carbon.

An electron source comprises a plurality of electron-emitting devices and a drive means for driving the devices. The drive means applies a voltage above a threshold level to selected ones of the plurality of electron-emitting devices according to an image signal to cause the selected devices to emit electrons. The drive means also applies a voltage pulse for bringing the plurality of electron-emitting devices into a high resistance state. The voltage pulse for bringing into a high resistance state has a polarity reverse to that of the voltage for causing electron emission and has a voltage rising rate of greater than 10 V/sec.

Electron source, image-forming apparatus comprising the same and method of driving such an image-forming apparatus

An image display apparatus is provided with an external housing constituted by members including first and second substrates positioned with a gap therebetween, an electron source positioned on the first substrate in the external housing, and a fluorescent film and an accelerating electrode provided on the second substrate. A first getter is positioned in the image display area in the external housing. A second getter is provided, so that it is insulated from the electron source and the accelerating electrode, which surrounds the first getter.

Method for gettering an image display apparatus

An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film inclusive of an electron-emitting region arranged between the electrodes. The electric resistance of the electroconductive film is reduced after forming the electron-emitting region in the course of manufacturing the electron-emitting device.

Method of manufacturing electron-emitting device as well as electron source and image-forming apparatus

An electron-emitting device includes a pair of electrodes and an electroconductive film arranged between the electrodes and including an electron-emitting region carrying a graphite film. The graphite film shows, in a Raman spectroscopic analysis using a laser light source with a wavelength of 514.5 nm and a spot diameter of 1 &mgr;m, peaks of scattered light, of which 1) a peak (P ) located in the vicinity of 1,580 cm is greater than a peak (P ) located in the vicinity of 1,335 cm or 2) the half-width of a peak (P ) located in the vicinity of 1,335 cm is not greater than 150 cm .

An electron source comprises a plurality of electron-emitting devices and a drive means for driving the devices. The drive means applies a voltage above a threshold level to selected ones of the plurality of electron-emitting devices according to an image signal to cause the selected devices to emit electrons. The drive means also applies a voltage pulse for bringing the plurality of electron-emitting devices into a high resistance state. The voltage pulse for bringing into a high resistance state has a polarity reverse to that of the voltage for causing electron emission and has a voltage rising rate of greater than 10V/sec.

Growing community of inventors

Yokohama, Japan

Yasuhiro Hamamoto