Screen Holdings Co., Ltd.

Dainippon Screen Mfg. Co., Ltd.

Sokudo Co., Ltd.

Yasuhiro Fukumoto

Yuji Tanaka

Tomohiro Matsuo

Masahiko Harumoto

Masaya Asai

Chisayo Nakayama

Takeharu Ishii

Koji Nishi

Shigehiro Goto

Toru Momma

Atsushi Tanaka

Yasuhiro Shiba

Mitsuhiro Masuda

Kenichiro Jo

Takafumi Oki

Koji Kaneyama

Masao Tsuji

Toshihiro Nakajima

Tatsuhisa Tsuji

Hideyuki Taniguchi

Toru Azuma

Hiroshi Miyauchi

Disclosed is a substrate treating apparatus that performs a heat treatment to a substrate. The apparatus includes the following elements: a heat treating plate that heats the substrate; lift pins that deliver the substrate, a lift pin drive mechanism that causes the lift pins to move upwardly/downwardly; a casing that produces a heat treatment atmosphere; and a cooling base plate that suppresses transmission of heat from the heat treating plate. The lift pin drive mechanism is disposed below the cooling base plate.

Substrate treating apparatus and substrate treating system including pin lift mechanism below cooling base and heat plate

A substrate treating method for performing a heat treatment of a substrate that has a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of exhausting gas within the heat treating space formed by a cover enclosing surroundings of a heat treating plate; an inert gas supply step of supplying inert gas from an upper portion of the heat treating space into the heat treating space and supplying inert gas into a gap between an outer peripheral surface of the heat treating plate and an inner wall of the cover; and a heat treating step of performing the heat treatment of the substrate in the heat treating space. The heat treating step is performed after the exhaust step and the inert gas supply step.

Substrate treating method and apparatus used therefor

An oxygen concentration is lowered in accordance with a set lowering process, and thereafter a heat treatment is performed. Accordingly, the heat treatment is performed to a substrate W while the oxygen concentration in a heat treating space HS is lowered. Consequently, a treatment atmosphere within the heat treating space is able to be made suitable for a heat treatment process, leading to appropriate film deposition. In addition, the oxygen concentration is lowered in accordance with a concentration level in recipes. This avoids an excessively lowered oxygen concentration, leading to prevention of reduced throughput.

Substrate treating method

Exhaust of gas in the processing chamber is started by a gas exhaust section, and supply of an inert gas into the processing chamber is started by a gas supply section after a predetermined time length has elapsed since the exhaust of gas is started. Alternatively, the gas in the processing chamber in which a substrate is stored is exhausted by the gas exhaust section, the inert gas is supplied into the processing chamber by the gas supply section, and the pressure in a light emitter that has a light-transmitting plate is allowed to match or be close to the pressure in the processing chamber. The substrate in the processing chamber is irradiated with vacuum ultraviolet rays by the light emitter with an oxygen concentration in the gas in the processing chamber lowered to a predetermined concentration. Thus, the substrate is exposed.

Exposure device, substrate processing apparatus, exposure method and substrate processing method

Disclosed is a substrate treating method for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of performing exhaust of gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, and a heat treating step of performing the heat treatment of the substrate in the heat treating space.

Disclosed is a substrate treating method for treating a substrate with a directed self-assembly material applied thereto. The substrate treating method includes a heating step and a cooling step. The heating step includes heating the substrate to perform phase separation of the directed self-assembly material by maintaining an interior of a treatment container in a non-oxidizing gas atmosphere and placing the substrate at a heating position. The cooling step includes cooling the substrate by maintaining the interior of the treatment container in the non-oxidizing gas atmosphere, placing the substrate at a cooling position further away from the heating unit than the heating position, supplying non-oxidizing gas into the treatment container, and exhausting gas within the treatment container.

Disclosed is a substrate treating method for performing a heat treatment of a substrate in a heat treating space. The method includes a loading step of loading the substrate on support pins, an exhaust step of exhausting gas within the heat treating space, an inert gas supply step of supplying inert gas into the heat treating space, an under-substrate space gas discharging step of discharging gas within an under-substrate space between the substrate and the top face of the heat treating plate, and a heat treating step of retracting the support pins into the heat treating plate, and performing the heat treatment of the substrate placed on the top face of the heat treating plate in the heat treating space.

Disclosed is a substrate treating apparatus including a treatment container, a pin, a seal housing, a seal member, and an exhaust port. The treatment container includes an opening. The pin is disposed between an interior of the treatment container and an exterior of the treatment container through the opening, and is configured to reciprocate along an axis thereof. The seal housing is disposed in the exterior of the treatment container. The seal housing is in close contact with the treatment container around the opening, and accommodates a part of the pin. The seal member is in close contact with an inner peripheral surface of the seal housing, and in close contact with an outer peripheral surface of the pin so as to be slidable relative to the pin. The exhaust port is in connection with the seal housing in a communicated manner.

Substrate treating apparatus

An upper plate on which a substrate is placed is cooled or heated by a thermal processor. The temperature of the thermal processor is adjusted by a temperature adjuster. The temperature of the upper plate is detected. A control value that is to be applied to the temperature adjuster in order to maintain the temperature of the upper plate at a set value is calculated as a control arithmetic value on the basis of the detected temperature. When the control arithmetic value decreases to a value less than a second threshold value, a first control that applies the control arithmetic value to the temperature adjuster is performed. When the control arithmetic value increases to a value not less than a first threshold value, a second control that applies a control set value higher than the control arithmetic value to the temperature adjuster is performed.

Thermal processing apparatus and thermal processing method

Vacuum ultraviolet rays are emitted to a surface to be processed of a substrate to be processed by a light source. During an emission period in which the vacuum ultraviolet rays are emitted from the light source to the substrate, part of the vacuum ultraviolet rays is received by an illuminometer, and illuminance of the received vacuum ultraviolet rays is measured. A light receiving surface of the illuminometer is located at a constant height that is based on the surface to be processed of the substrate during the emission period of the vacuum ultraviolet rays. An exposure amount of the substrate is calculated based on the illuminance measured by the illuminometer. Emission of the vacuum ultraviolet rays from the light source to the substrate is stopped based on the calculated exposure amount of the substrate.

Exposure device substrate processing apparatus, exposure method of substrate and substrate processing method

An atmosphere in a processing chamber in which a substrate is stored is discharged by a suction device. At a time point at which oxygen concentration in the processing chamber is lowered to predetermined exposure starting concentration, emission of vacuum ultraviolet rays from a light source to the substrate is started. The emission of the vacuum ultraviolet rays to the substrate is stopped at a time point at which the exposure amount of the substrate increases to a predetermined set exposure amount. The exposure starting concentration is defined in advance to be higher than 1% and lower than oxygen concentration in the air, and is defined in advance such that ozone generated from oxygen atoms by the emission of the vacuum ultraviolet rays do not damage the film on the surface to be processed of the substrate.

Exposure device, substrate processing apparatus, exposure method of substrate and substrate processing method

Substrate treating apparatus including a cover that covers a substrate on a plate. The cover undersurface is substantially horizontal and adjacent to a surface of the substrate. Through a gas flow path, a treatment gas is supplied to the substrate. The gas flow path includes a swirl chamber, a diameter contraction chamber, and a diameter expansion chamber. In the swirl chamber, the treatment gas flows around the central axis. The diameter contraction chamber is disposed below and in communication with the swirl chamber, and has an inner diameter that decreases from its upper end toward its lower end. The diameter expansion chamber is disposed below and in communication with the diameter contraction chamber, and has an inner diameter that increases from its upper end toward its lower end. The lower end of the diameter expansion chamber includes an opening on the undersurface of the cover.

Substrate treating apparatus and treatment gas supplying nozzle

A heat treatment apparatus includes a support sheet placed on an upper surface of a heat-treating plate. The support sheet has, formed on an upper surface thereof, projections for contacting and supporting a substrate, and a lip for contacting edge regions of the substrate. The support sheet is formed by an etching process, and therefore areas of the sheet around the projections are recessed, rather than being perforated as in the case of laser processing. These heat-treating plate and support sheet constitute a substrate support structure capable of supporting the substrate properly.

Substrate support structure, heat treatment apparatus using same, first sheet-like object for use in the substrate support structure, method of manufacturing the substrate support structure, heat treatment apparatus, and substrate sucking method

In a thermal processing unit, a substrate is held by a local transport hand to be transported between a transfer section and a heating unit, and subjected to a heat processing by the heating unit. Also, the local transport hand is cooled by a cooling plate in the transfer section.

Thermal processing apparatus, thermal processing method, and substrate processing apparatus

A thermal processing unit is connected to a substrate position detector, which is in turn connected to a bake unit controller. The thermal processing unit includes a temperature control plate and a lifting device. The temperature control plate and lifting device are connected to the bake unit controller. The operations of the temperature control plate and lifting device are controlled by the bake unit controller. A pressure measuring pipe is provided at a lower part of at least one of a plurality of pin inserting holes in the temperature control plate. The pressure measuring pipe is connected to a low differential pressure sensor. The low differential pressure sensor detects the pressure in an airflow exhausted from a space surrounded by a substrate and an upper face of the temperature control plate via the pressure measuring pipe.

Growing community of inventors

Kyoto, Japan

Yasuhiro Fukumoto