Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Yasuhiro Fujimoto

Isao Kidoguchi

Toru Takayama

Hisashi Nakayama

Satoshi Murasawa

Tougo Nakatani

A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.

Semiconductor laser device and fabrication method therefor

In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.

Semiconductor laser device and method for fabricating the same

In a monolithic dual wavelength laser device in which an infrared laser partand a red laser partare built on one n-type GaAs substrate, a p-type first cladding layerof the infrared laser partand a p-type first cladding layerof the red laser partare made of the same material and have different impurity concentrations.

A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNis formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrOis selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb&#x3c;Tc&#x3c;Ts is satisfied.

Semiconductor laser device

A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.

Growing community of inventors

Okayama, Japan

Yasuhiro Fujimoto