Sony Corporation

Yasuhiro Chiba

Jiro Yamada

Naoki Sano

Yuichi Iwase

Mitsunobu Sekiya

Mitsuru Asano

Mitsuru Taguchi

Keiichi Maeda

Tatsuya Sasaoka

Tasuya Sasaoka

An active-matrix-type display apparatus ensuring sufficient luminous intensity of display devices within a display plane and allowing improved display properties is provided. Such display apparatus having of a plurality of pixels comprises a lower electrode formed on a substrate; organic layers formed on the lower electrode; and an upper common electrode formed on the organic layers; in which a plurality of the pixels are partitioned by a rib larger in the thickness than the organic layers and having at least a conductive material layer; and the conductive material layer is electrically connected to the upper common electrode.

Display apparatus and method for fabricating the same

An organic electroluminescence device having an anode structure on the lower surface which is effective for taking out light efficiently from the cathode on the upper surface in which the organic electroluminescence device comprises an anode, a cathode and an organic layer put between both of them. The organic layer contains an organic light emitting layer that emits light by re-combination of holes supplied from the cathode A and electrons supplied from the cathode. The cathode comprises a laminate structure of an electron injecting metal layer, and a transparent conductive layer ultra thin film which is basically light permeable. The anode contains a metal belonging to the group V or group VI of the periodical table to at least a portion in contact with the organic layer and is basically light reflective. The anode metal is selected from chromium, molybdenum, tungsten, tantalum and niobium. The anode metal has a work function of 4.8 eV or lower.

Organic electroluminescence device and display device

Display apparatus with ribs having conductive material

Disclosed is a magnetron sputtering system enabling formation of a film of a ferroelectric substance by suppressing occurrence of a magnetic field due to an eddy current. The magnetron sputtering system includes a flat target; magnetic field applying means (magnets), provided in the vicinity of a back surface of the target, for applying a magnetic field to a front surface of the target; and magnetic field rotating means (motor) for rotating the magnetic field applying means so as to rotate the magnetic field applied to the front surface of the target. The magnetic field rotating means is provided with rotational speed varying means (speed controller) for varying the rotational speed of the magnetic field applied by the magnetic field rotating means.

Method for fabricating a semiconductor device in a magnetron sputtering system

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Kanagawa, Japan

Yasuhiro Chiba