Renesas Technology Corp.

Renesas Electronics Corporation

Yasuhiko Takahashi

Hiraku Chakihara

Kousuke Okuyama

Masahiro Moniwa

Masashi Horiguchi

Masaharu Kubo

Ryo Fujita

Kouki Noguchi

Shinya Sano

Michihiro Mishima

Osamu Kubo

Takayuki Tanaka

Satoshi Aoyama

Atsuhiro Hayashi

Seiji Ikari

Naoki Mitsuishi

Yoshikazu Nara

A microcomputer includes a central processing unit (CPU) and a data transfer controller (DTC). The data transfer controller (DTC) reads out data transfer information including transfer mode information from a storage device (RAM) or the like. The data transfer controller (DTC) analyzes the transfer mode information to change at least one of a transfer source address, a transfer destination address, the number of transfer operations, and data transfer information that is used next.

Semiconductor device

The present invention provides a voltage generation circuit which outputs high-precision output voltage in a wide temperature range. A semiconductor device has a voltage generation circuit. The voltage generation circuit has a reference voltage generation circuit which outputs reference voltage, and a plurality of correction circuits for generating a correction current and making it fed back to the reference voltage generation circuit. The correction circuits generate sub correction currents which monotonously increase from predetermined temperature which varies among the correction circuits toward a low-temperature side or a high-temperature side. The correction current is sum of a plurality of sub correction currents.

Semiconductor device having voltage generation circuit

A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

Semiconductor memory device and a method of manufacturing the same

Provided are a technique for high-speed switching between clock signals different in frequency, and a clock-control-signal-generation circuit which serves to generate a control signal for clock switching in a clock selector operable to switch between clock signals including a first clock signal based on first and second clock-stop-permission signals and a clock-resume-permission signal. The clock-control-signal-generation circuit includes: a before-switching clock processing unit; and an after-switching clock processing unit. In each of the before-and after-switching clock processing units, the high-frequency clock processing subunit and the low-frequency clock processing subunit take partial charges of processing of clock signals involved in the switching respectively, whereby the processing is speeded up.

Clock control signal generation circuit, clock selector, and data processing device

A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly comprise laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

In a semiconductor memory device, third and fourth transistors are configured as a vertical structure. The third transistor is laminated over a first transistor, and the fourth transistor is laminated over a second transistor, whereby a reduction in cell area is achieved. A voltage, which is set on the condition that the difference between a source potential applied to each of the first and second transistors and the potential of a select level of a word line becomes greater than or equal to a threshold voltage of each of the third and fourth transistors, is supplied to a source electrode of each of the first and second transistors, to thereby perform '0' write compensation.

Semiconductor memory device and semiconductor integrated circuit

An electronic circuit device has a high-density mount board (), on which are disposed a microcomputer () and random access memory () which are connected to each other through an exclusive memory bus () for high-speed data transfer, a programmable device () which is a variable logic circuit represented by FPGA, and an electrically-rewritable nonvolatile memory () which can store the operation program of the microcomputer. The high-density mount board has external mounting pins on the bottom surface so that it can be mounted on a mother board in the same manner as a system on-chip multi-chip module. With an intended logic function being set on the programmable device, a hardware-based function to be realized by the electronic circuit device can be simulated. With an operation program being written to the nonvolatile memory, a software-based function to be realized can be simulated. Consequently, the device facilitates the debugging at early stages of system development, configures a prototype system, and contributes to the time reduction throughout the system development, prototype fabrication and large-scale production.

Electronic circuit device

A plurality of sets of circuits are provided, each of which generates an impedance code through the use of an impedance control circuit in association with a resistive element connected to an external terminal, and each of which varies the impedance in accordance with such an impedance code. The impedance control circuit includes an impedance comparator which is formed equivalently to the resistive element and the plurality of sets of circuits, and which performs an impedance comparison with each of a plurality of replica circuits to form an up signal that increases the impedance and a down signal that decreases the impedance. Counters are provided adjacent to the individuals of the plurality of sets of circuits to thereby generate the impedance codes in response to the up signal and the down signal.

Semiconductor integrated circuit device

A memory cell of a SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly consist of a square pole laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.

Growing community of inventors

Higashiyamato, Japan

Yasuhiko Takahashi