Sony Corporation

Yasuhiko Suzuki

Osamu Goto

Takeharu Asano

Katsuyoshi Shibuya

Motonobu Takeya

Masao Ikeda

Shiro Uchida

Tsuyoshi Tojo

Takashi Mizuno

Shinro Ikeda

Katsunori Yanashima

Motonobu Taketani

A semiconductor light emitting device made of nitride III-V compound semiconductors including an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

Semiconductor light emitting device, its manufacturing method, semiconductor device and its manufacturing method

A method of manufacturing a semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0&#x3c;y/x&#x2266;0.011 and x&#x2267;450 &#x3bc;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0&#x3c;H&#x2266;70&#xd7;10(cm), and Z=y/x, D is controlled to satisfy the relation 0&#x3c;D&#x3c;(2/CZ)cos(1&#x2212;HCZ), where C (cm) is the proportionality constant when the radius of curvature of the substrate &#x3c1; (cm) is expressed as 1/&#x3c1;=CZ.

Method of manufacturing a semiconductor light emitting device utilizing a nitride III-V compound semiconductor substrate

A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030&#xb0; C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070&#xb0; C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.

Nitride semiconductor, semiconductor device, and manufacturing methods for the same

When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0<y/x&lE;0.011 and x&gE;450 &mgr;m. Alternatively, if the maximum dimension of the substrate is D (cm), its warpage H is in the range of 0<H&lE;70&times;10 (cm), and Z&equals;y/x, D is controlled to satisfy the relation 0<D<(2/CZ)cos (1&minus;HCZ), where C (cm ) is the proportionality constant when the radius of curvature of the substrate &rgr; (cm) is expressed as 1/&rgr;&equals;CZ.

Nitride III-V compound semiconductor substrate, its manufacturing method, manufacturing method of a semiconductor light emitting device, and manufacturing method of a semiconductor device

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Miyagi, Japan

Yasuhiko Suzuki