Hitachi, Ltd.

Other

Yasuhiko Nakatsuka

Yoshikazu Tanabe

Nobuyoshi Natsuaki

Toshiaki Nagahama

Tadashi Suzuki

In a gas-phase treating process of a semiconductor wafer using hydrogen, there is provided a technique for safely eliminating the hydrogen in an exhaust gas discharged from a gas-phase treating apparatus. The profile at the end portions of the side walls of gate electrodes of a poly-metal structure is improved by forming the gate electrodes over a semiconductor wafer IA having a gate oxide film and then by supplying the semiconductor wafer A with a hydrogen gas containing a low concentration of water, as generated from hydrogen and oxygen by catalytic action, to oxidize the principal face of the semiconductor wafer A selectively. After this, the hydrogen in the exhaust gas, as discharged from an oxidizing furnace, is completely converted into water by causing it to react with oxygen by a catalytic method.

Process for manufacturing semiconductor integrated circuit device including treatment of gas used in the process

Annealing technology is capable of heating a wafer on which a copper film is formed at a desired temperature within a short period of time. A light-shielding plate of SiC (silicon carbide) exhibiting a flat emissivity irrespective of the wavelengths and emitting light over a wide band of wavelengths is interposed between the wafer on which is formed a copper film having a high light reflection factor and lamps The lamps are turned on in this state so that the light-shielding plate is heated, first, and, then, the wafer is heated by light radiated from the light-shielding plate that is heated, thereby to anneal the copper film.

Fabrication method for semiconductor integrated device

In a gas-phase treating process of a semiconductor wafer using hydrogen, there is provided a technique for safely eliminating the hydrogen in an exhaust gas discharged from a gas-phase treating apparatus. The profile at the end portions of the side walls of gate electrodes of a poly-metal structure is improved by forming the gate electrodes over a semiconductor wafer,A having a gate oxide film and then by supplying the semiconductor wafer,A with a hydrogen gas containing a low concentration of water, as generated from hydrogen and oxygen by catalytic action, to oxidize the principal face of the semiconductor wafer,A selectively. After this, the hydrogen in the exhaust gas, as discharged from an oxidizing furnace, is completely converted into water by causing it to react with oxygen by a catalytic method.

In a gas-phase treating process of a semiconductor wafer using hydrogen, there is provided a technique for safely eliminating the hydrogen in an exhaust gas discharged from a gas-phase treating apparatus. The profile at the end portions of the side walls of gate electrodes of a poly-metal structure is improved by forming the gate electrodes over a semiconductor wafer IA having a gate oxide film and then by supplying the semiconductor wafer 1A with a hydrogen gas containing a low concentration of water, as generated from hydrogen and oxygen by catalytic action, to oxidize the principal face of the semiconductor wafer 1A selectively. After this, the hydrogen in the exhaust gas, as discharged from an oxidizing furnace, is completely converted into water by causing it to react with oxygen by a catalytic method.

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Ome, Japan

Yasuhiko Nakatsuka