Seiko Epson Corporation

Yasuhiko Murakami

Yasunori Koide

A thermal detector includes a fixed part, a thermal detection device, a supporting member, a cavity and a connection portion. The supporting member has a first plane and a second plane opposing to the first plane. The cavity is formed between the first plane and the fixed part. The connection portion connects the supporting member with the fixed part. The connection portion includes a curvature plane between the supporting member and the fixed part and the curvature plane facing the cavity.

Thermal detector

A method for manufacturing a MEMS device having an undercut shape formed on a fixed part includes a first step of forming an etching layer having a first cavity on the fixed part; a second step of forming a mask layer on a side wall of the etching layer, the side wall facing the first cavity; and a third step of directing an etchant fed into the first cavity on a surface side of the mask layer to a back surface side of the mask layer, isotropically etching the etching layer, forming a second cavity communicated with the first cavity on the back surface side of the mask layer, and processing the etching layer into an undercut shape.

Method for manufacturing MEMS device, method for manufacturing thermal detector, thermal detector, thermal detection device, and electronic instrument

A ferroelectric memory device includes: an odd number of memory regions, the odd number being at least three or higher; a readout circuit that reads data of 0 or 1 stored in the odd number of memory regions; a comparison circuit that compares readout data at corresponding addresses of the odd number of memory regions, and decides comparison data of 0 or 1 according to voting; and a write circuit that writes the comparison data in one region in the odd number of memory regions.

Ferroelectric memory device, method for driving ferroelectric memory device, electronic apparatus, and method for driving electronic apparatus

A ferroelectric memory device being short in the bit line direction. The ferroelectric memory device is structured including a first word line extending in the first direction; a plurality of element regions arrayed in the first direction on both sides of the first word line; a plurality of ferroelectric capacitors connected to the respective element regions and driven by the first word line. Each of the element regions preferably has a stair-like shape when seen in a plane view and the first word line is preferably arranged bent between the element regions.

Growing community of inventors

Nagano, Japan

Yasuhiko Murakami